JST180N30D5
30V N-Channel Mosfet
PDFNWB5*6-8L
FEATURES
● RDS(ON) < 2.4mΩ @ VGS = 10V
● RDS(ON) < 3.3mΩ @ VGS = 4.5V
APPLICATIONS
Load Switch
PWM Application
Power management
MARKING
1: S
3: S
5: D
7: D
2: S
4: G
6: D
8: D
N-CHANNEL MOSFET
YYMM:Date Code(year&month)
Maximum ratings (TC=25℃ unless otherwise noted)
Symbol
bol
Parameter
Max.
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
±20
V
TC = 25℃
115
A
TC = 100℃
72
460
A
240
mJ
70
W
1.78
℃/W
-55 to +150
℃
ID
Continuous Drain Current
IDM
Pulsed Drain Current
EAS
Single Pulsed Avalanche Energy
PD
Power Dissipation
RθJC
TJ, TSTG
note1
note2
TC = 25℃
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
A
1/6
JST180N30D5
MOSFET ELECTRICAL CHARACTERISTICS Tc=25 ℃ unless otherwise specified
Symbol
bol
Parameter
Test Condition
Min.
Typ.
Max.
Units
Off Characteristic
V(BR)DSS
Drain-Source Breakdown Voltage
VGS = 0V,ID = 250μA
A
30
-
-
V
IDSS
Zero Gate Voltage Drain Current
VDS =30V, VGS = 0V
-
-
1
μA
IGSS
Gate to Body Leakage Current
VGS = ±20V, VDS = 0V
-
-
±100
nA
V
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID = 250μA
1
1.6
2.5
RDS(on)
Static Drain-Source On-Resistance
VGS =10V, ID =30A
-
1.9
2.4
note3
VGS =4.5V, ID =15A
-
2.5
3.3
-
4800
-
pF
-
735
-
pF
-
420
-
pF
-
40
-
nC
-
6
-
nC
-
19
-
nC
-
20
-
ns
-
32
-
ns
-
75
-
ns
-
28
-
ns
mΩ
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain(“Miller”) Charge
VDS =25V, VGS = 0V,
f = 1.0MHz
VDS=15V, ID =24A,
VGS =4.5V
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
VDS =15V, ID=1A,
RG= 1Ω, VGS =10V
Turn-Off Fall Time
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain to Source Diode Forward
Current
-
-
115
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
230
A
VSD
Drain to Source Diode Forward
Voltage
VGS = 0V, ISD=30A,
TJ = 25℃
-
-
1.2
V
trr
Reverse Recovery Time
-
49
85
ns
Qrr
Reverse Recovery Charge
TJ= 25°C, IS=1A,
di/dt =100A/μs
-
18
35
nC
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2 . TJ=25℃,VDD=25V,VG=10V, RG=25Ω
3 . Pulse Test: Pulse width ≤ 380μs, Duty Cycle ≤ 2%
2/6
JST180N30D5
Typical Characteristics
Figure1. Output Characteristics
Figure3. Rdson-Drain Current
Figure5. Capacitance Characteristics
Figure2. Transfer Characteristics
Figure4. Typical Source-Drain Diode Forward
Voltage
Figure6. Gate Charge
3/6
JST180N30D5
Figure7. Normalized Breakdown Voltage vs.
Temperature
Figure9. Safe Operation Area
Figure8. Normalized on Resistance vs.
Temperature
Figure10. Maximum Drain Current vs. Case
Temperature
Figure11. Transient Thermal Response Curve
4/6
JST180N30D5
Figure 1. Gate Charge Test Circuit & Waveform
Figure 2. Resistive Switching Test Circuit & Waveforms
Figure 3. Unclamped Inductive Switching Test Circuit & Waveforms
5/6
JST180N30D5
Package Outline Dimensions
Symbol
A
A1
A2
D
D1
E
E1
E2
b
e
L
L1
L2
L3
H
θ
Dimensions In Millimeters
Min.
Max.
0.650
0.850
0.152 REF.
0~0.05
2.900
3.100
2.300
2.600
2.900
3.100
3.150
3.450
1.535
1.935
0.200
0.400
0.550
0.750
0.300
0.500
0.180
0.480
0~0.100
0~0.100
0.315
0.515
9°
13°
Dimensions In Inches
Min.
Max.
0.026
0.033
0.006 REF.
0~0.002
0.114
0.122
0.091
0.102
0.114
0.122
0.124
0.136
0.060
0.076
0.008
0.016
0.022
0.030
0.012
0.020
0.007
0.019
0~0.004
0~0.004
0.012
0.020
9°
13°
6/6
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