BT137S-600E,118

IMPORTANT NOTICE 10 December 2015 1. Global joint venture starts operations as WeEn Semiconductors Dear customer, As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which will be used in future Bipolar Power documents together with new contact details. In this document where the previous NXP references remain, please use the new links as shown below. WWW - For www.nxp.com use www.ween-semi.com Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com For the copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) “© NXP Semiconductors N.V. {year}. All rights reserved” becomes “© WeEn Semiconductors Co., Ltd. {year}. All rights reserved” If you have any questions related to this document, please contact our nearest sales office via email or phone (details via salesaddresses@ween-semi.com). Thank you for your cooperation and understanding, WeEn Semiconductors BT137S-600E 4Q Triac 1 November 2016 Product data sheet 1. General description Planar passivated sensitive gate four quadrant triac in a TO252 (DPAK) surface-mountable plastic package intended for use in general purpose bidirectional switching and phase control applications. This sensitive gate "series E" triac is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 2. Features and benefits • • • • • • • Direct triggering from low power drivers and logic ICs High blocking voltage capability Low holding current for low current loads and lowest EMI at commutation Planar passivated for voltage ruggedness and reliability Sensitive gate Surface-mountable package Triggering in all four quadrants 3. Applications • • General purpose motor controls General purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDRM repetitive peak offstate voltage IT(RMS) RMS on-state current ITSM Tj Conditions Min Typ Max Unit - - 600 V - - 8 A non-repetitive peak on- full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5 state current - - 65 A full sine wave; Tj(init) = 25 °C; tp = 16.7 ms - - 71 A - - 125 °C VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 - 2.5 10 mA VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 - 4 10 mA full sine wave; Tmb ≤ 102 °C; Fig. 1; Fig. 2; Fig. 3 junction temperature Static characteristics IGT gate trigger current BT137S-600E WeEn Semiconductors 4Q Triac Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 - 5 10 mA VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 °C; Fig. 7 - 11 25 mA IH holding current VD = 12 V; Tj = 25 °C; Fig. 9 - 2.5 20 mA VT on-state voltage IT = 10 A; Tj = 25 °C; Fig. 10 - 1.3 1.65 V VDM = 402 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit - 50 - V/µs Simplified outline Graphic symbol Dynamic characteristics dVD/dt rate of rise of off-state voltage 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 T1 main terminal 1 2 T2 main terminal 2 3 G gate mb T2 mounting base; main terminal 2 mb T2 sym051 T1 G 2 1 3 DPAK (TO252N) 6. Ordering information Table 3. Ordering information Type number BT137S-600E BT137S-600E Product data sheet Package Name Description Version DPAK plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) TO252N All information provided in this document is subject to legal disclaimers. 1 November 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 2 / 13 BT137S-600E WeEn Semiconductors 4Q Triac 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current ITSM non-repetitive peak onstate current 2 Conditions 2 Min Max Unit - 600 V full sine wave; Tmb ≤ 102 °C; Fig. 1; Fig. 2; Fig. 3 - 8 A full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5 - 65 A full sine wave; Tj(init) = 25 °C; tp = 16.7 ms - 71 A I t I t for fusing tp = 10 ms; SIN - 21 A²s dIT/dt rate of rise of on-state current IG = 20 mA - 50 A/µs - 50 A/µs IG = 50 mA - 10 A/µs IG = 20 mA - 50 A/µs IGM peak gate current - 2 A PGM peak gate power - 5 W PG(AV) average gate power - 0.5 W Tstg storage temperature -40 150 °C Tj junction temperature - 125 °C over any 20 ms period 003aae689 10 IT(RMS) (A) 8 IT(RMS) 6 15 4 10 2 5 0 - 50 (A) 20 0 50 100 Tmb (°C) 0 10- 2 150 Fig. 1. RMS on-state current as a function of mounting base temperature; maximum values BT137S-600E Product data sheet 003aae692 25 10- 1 1 10 surge duration (s) f = 50 Hz Tmb ≤ 102 °C Fig. 2. RMS on-state current as a function of surge duration; maximum values All information provided in this document is subject to legal disclaimers. 1 November 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 3 / 13 BT137S-600E WeEn Semiconductors 4Q Triac 003aae690 12 Ptot (W) conduction angle, α (degrees) form factor a 30 60 90 120 180 2.816 1.967 1.570 1.329 1.110 8 α = 180° α 120° 90° 60° α 30° 4 0 0 2 4 6 8 10 IT(RMS) (A) α = conduction angle a = form factor = IT(RMS)/IT(AV) Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values 003aae691 103 ITSM IT ITSM (A) t tp Tj(init) = 25 °C max 102 (1) (2) 10 10- 5 10- 4 10- 3 10- 2 tp (s) 10- 1 tp ≤ 20 ms (1) dIT/dt limit (2) T2- G+ quadrant limit Fig. 4. Non-repetitive peak on-state current as a function of pulse width; maximum values BT137S-600E Product data sheet All information provided in this document is subject to legal disclaimers. 1 November 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 4 / 13 BT137S-600E WeEn Semiconductors 4Q Triac 003aae693 80 ITSM (A) 60 40 ITSM IT 20 t 1/f 0 Tj(init) = 25 °C max 1 10 102 103 number of cycles 104 f = 50 Hz Fig. 5. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BT137S-600E Product data sheet All information provided in this document is subject to legal disclaimers. 1 November 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 5 / 13 BT137S-600E WeEn Semiconductors 4Q Triac 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base half cycle; Fig. 6 - - 2.4 K/W full cycle; Fig. 6 - - 2 K/W thermal resistance from junction to ambient free air PCB (FR4) mounted; minimum pad sizes - 75 - K/W Rth(j-a) 003aae698 10 Zth(j-mb) (K/W) 1 unidirectional bidirectional 10-1 10-2 10-5 10-4 10-3 10-2 10-1 1 tp (s) 10 Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse width BT137S-600E Product data sheet All information provided in this document is subject to legal disclaimers. 1 November 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 6 / 13 BT137S-600E WeEn Semiconductors 4Q Triac 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 - 2.5 10 mA VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 - 4 10 mA VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 - 5 10 mA VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 °C; Fig. 7 - 11 25 mA VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 8 - 3 25 mA VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 8 - 14 35 mA VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 °C; Fig. 8 - 3 25 mA VD = 12 V; IG = 0.1 A; T2- G+; Tj = 25 °C; Fig. 8 - 4 35 mA Static characteristics IGT IL gate trigger current latching current IH holding current VD = 12 V; Tj = 25 °C; Fig. 9 - 2.5 20 mA VT on-state voltage IT = 10 A; Tj = 25 °C; Fig. 10 - 1.3 1.65 V VGT gate trigger voltage VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 11 - 0.7 1 V VD = 400 V; IT = 0.1 A; Tj = 125 °C; Fig. 11 0.25 0.4 - V VD = 600 V; Tj = 125 °C - 0.1 0.5 mA ID off-state current Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM = 402 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit - 50 - V/µs tgt gate-controlled turn-on ITM = 12 A; VD = 600 V; IG = 0.1 A; dIG/ time dt = 5 A/µs - 2 - µs BT137S-600E Product data sheet All information provided in this document is subject to legal disclaimers. 1 November 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 7 / 13 BT137S-600E WeEn Semiconductors 4Q Triac 003aae809 3 IL IL(25°C) IGT IGT (25 °C) (1) (2) 2 2 (3) (4) (1) (2) (3) 1 0 - 60 1 (4) - 10 003aae697 3 40 90 Tj (°C) 0 - 60 140 (1) T2- G+ (2) T2- G(3) T2+ G(4) T2+ G+ - 10 40 90 Tj (°C) 140 Fig. 8. Normalized latching current as a function of junction temperature Fig. 7. Normalized gate trigger current as a function of junction temperature 003aae699 2.0 003aae696 30 IH IH(25°C) IT (A) 1.5 20 1.0 10 0.5 0 - 60 (1) - 10 40 90 Tj (°C) 0 140 0 (2) (3) 1 2 VT (V) 3 Vo = 1.264 V Rs = 0.038 Ω (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj = 25 °C; maximum values Fig. 9. Normalized holding current as a function of junction temperature Fig. 10. On-state current as a function of on-state voltage BT137S-600E Product data sheet All information provided in this document is subject to legal disclaimers. 1 November 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 8 / 13 BT137S-600E WeEn Semiconductors 4Q Triac 003aae694 1.6 VGT VGT (25°C) 1.2 0.8 0.4 0 - 60 - 10 40 90 Tj (°C) 140 Fig. 11. Normalized gate trigger voltage as a function of junction temperature BT137S-600E Product data sheet All information provided in this document is subject to legal disclaimers. 1 November 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 9 / 13 BT137S-600E WeEn Semiconductors 4Q Triac 10. Package outline Fig. 12. Package outline DPAK (TO252N) BT137S-600E Product data sheet All information provided in this document is subject to legal disclaimers. 1 November 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 10 / 13 BT137S-600E WeEn Semiconductors 4Q Triac Right to make changes — WeEn Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 11. Legal information Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local WeEn Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between WeEn Semiconductors and its customer, unless WeEn Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the WeEn Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 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Notwithstanding any damages that customer might incur for any reason whatsoever, WeEn Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of WeEn Semiconductors. Product data sheet Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. WeEn Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ween-semi.com. BT137S-600E Suitability for use — WeEn Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an WeEn Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. WeEn Semiconductors and its suppliers accept no liability for inclusion and/or use of WeEn Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Customers are responsible for the design and operation of their applications and products using WeEn Semiconductors products, and WeEn Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the WeEn Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. WeEn Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using WeEn Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). WeEn does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific WeEn Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. WeEn Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without WeEn Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond WeEn Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies WeEn Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond WeEn Semiconductors’ standard warranty and WeEn Semiconductors’ product specifications. All information provided in this document is subject to legal disclaimers. 1 November 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 11 / 13 BT137S-600E WeEn Semiconductors 4Q Triac Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. BT137S-600E Product data sheet All information provided in this document is subject to legal disclaimers. 1 November 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 12 / 13 BT137S-600E WeEn Semiconductors 4Q Triac 12. Contents 1. General description......................................................1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Limiting values............................................................. 3 8. Thermal characteristics............................................... 6 9. Characteristics..............................................................7 10. Package outline........................................................ 10 11. Legal information..................................................... 11 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved For more information, please visit: http://www.ween-semi.com For sales office addresses, please send an email to: salesaddresses@ween-semi.com Date of release: 1 November 2016 BT137S-600E Product data sheet All information provided in this document is subject to legal disclaimers. 1 November 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 13 / 13