SW8N70D

SW8N70D N-channel Enhanced mode TO-220F/TO-262N MOSFET Features       TO-262N TO-220F High ruggedness Low RDS(ON) (Typ 1.0mΩ)@VGS=10 Low Gate Charge (Typ 37nC) Improved dv/dt Capability 100% Avalanche Tested Application:Electronic Ballast , Motor Control , Synchronous Rectification, Inverter BVDSS : 700V ID : 8A RDS(ON) : 1.0Ω 1 1 2 2 2 3 3 1 1. Gate 2. Drain 3. Source 3 General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes Item Sales Type Marking Package Packaging 1 SW F 8N70D 2 SW J 8N70D SW8N70D TO-220F TUBE SW8N70D TO-262N TUBE Absolute maximum ratings Value Symbol Parameter Unit TO-220F VDSS ID Drain to source voltage 700 V 8* A 5* A 32 A ± 30 V Continuous drain current (@TC=25oC) Continuous drain current TO-262N (@TC=100oC) IDM Drain current pulsed VGS Gate to source voltage EAS Single pulsed avalanche energy (note 2) 528 mJ EAR Repetitive avalanche energy (note 1) 41 mJ dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns Total power dissipation PD TSTG, TJ TL (note 1) (@TC=25oC) Derating factor above 25oC 43 162 W 0.3 1.3 W/oC Operating junction temperature & storage temperature -55 ~ + 150 oC 300 oC Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. *. Drain current is limited by junction temperature. Thermal characteristics Value Symbol Parameter Unit TO-220F TO-262N Rthjc Thermal resistance, Junction to case 2.9 0.77 oC/W Rthja Thermal resistance, Junction to ambient 47 66 oC/W Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Mar. 2017. Rev. 3.0 1/6 SW8N70D Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC IDSS Drain to source leakage current 700 V V/oC 0.52 VDS=700V, VGS=0V 1 uA VDS=560V, TC=125oC 50 uA Gate to source leakage current, forward VGS=30V, VDS=0V 100 nA Gate to source leakage current, reverse VGS=-30V, VDS=0V -100 nA 4 V 1.2 Ω IGSS On characteristics VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA RDS(ON) Drain to source on state resistance VGS=10V, ID=4A 1.0 Forward transconductance VDS=30V, ID=4A 8 Gfs 2.5 S Dynamic characteristics Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance td(on) Turn on delay time tr td(off) tf Rising time Turn off delay time 1740 VGS=0V, VDS=25V, f=1MHz 118 pF 12 27 VDS=350V, ID=8A, RG=25Ω, VGS=10V (note 4,5) 43 ns 98 Fall time 41 Qg Total gate charge 37 Gate-drain charge VDS=560V,VGS=10V,ID=8A, Ig=4mA (note 4,5) Qgs Gate-source charge Qgd Rg Gate resistance VDS=0V, Scan F mode 1.6 9 nC 15 Ω Source to drain diode ratings characteristics Symbol Parameter IS Continuous source current ISM VSD Test conditions Min. Typ. Max. Unit 8 A Pulsed source current Integral reverse p-n Junction diode in the MOSFET 32 A Diode forward voltage drop. IS=8A, VGS=0V 1.4 V trr Reverse recovery time Qrr Reverse recovery charge IS=8A, VGS=0V, dIF/dt=100A/us 498 ns 4.4 uC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L =16.5mH, IAS =8A, VDD=50V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤ 8A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%. 5. Essentially independent of operating temperature. Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Mar. 2017. Rev. 3.0 2/6 SW8N70D Fig. 1. On-state characteristics Fig. 2. Transfer characteristics Fig. 3. On-resistance variation vs. drain current and gate voltage Fig. 4. On-state current vs. diode forward voltage Fig 5. Breakdown voltage variation vs. junction temperature Fig. 6. On-resistance variation vs. junction temperature Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Mar. 2017. Rev. 3.0 3/6 SW8N70D Fig. 7. Gate charge characteristics Fig. 9. Maximum safe operating area(TO-220F) Fig. 8. Capacitance Characteristics Fig. 10. Maximum safe operating area(TO-262N) Fig. 11. Transient thermal response curve(TO-220F) Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Mar. 2017. Rev. 3.0 4/6 SW8N70D Fig. 12. Transient thermal response curve(TO-262N) Fig. 13. Gate charge test circuit & waveform Fig. 14. Switching time test circuit & waveform VDS 90% RL RGS VDS VDD VIN 10VIN DUT 10% 10% td(on) tr tON Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. td(off) tf tOFF Mar. 2017. Rev. 3.0 5/6 SW8N70D Fig. 15. Unclamped Inductive switching test circuit & waveform Fig. 16. Peak diode recovery dv/dt test circuit & waveform DUT + V DS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRM VDS RG Diode reverse current VDD Diode recovery dv/dt Same type as DUT 10VGS VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period VDD VF Body diode forward voltage drop DISCLAIMER * All the data & curve in this document was tested in XI’AN SEMIPOWER TESTING & APPLICATION CENTE R. * This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing. * Qualification standards can also be found on the Web site (http://www.semipower.com.cn) * Suggestions for improvement are appreciated, Please send your suggestions to samwin@samwinsemi.com Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Mar. 2017. Rev. 3.0 6/6