SM4027PSUC-TRG

SM4027PSU ® P-Channel Enhancement Mode MOSFET Features • Pin Description -40V/-74A, D RDS(ON)= 8mΩ (max.) @ VGS=-20V RDS(ON)= 9.4mΩ (max.) @ VGS=-10V RDS(ON)= 15mΩ (max.) @ VGS=-4.5V • • • • S G HBM ESD capability level of 8KV typical 100% UIS + Rg Tested Top View of TO-252-2 Reliable and Rugged Lead Free and Green Devices Available (RoHS D Compliant) Note : The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. G Applications • Power Management in LCD TV Inverter. S P-Channel MOSFET Ordering and Marking Information Package Code U：TO-252-2 Operating Junction Temperature Range o C：-55 to 150 C Handling Code TR：Tape & Reel Assembly Material G：Halogen and Lead Free Device SM4027PS Assembly Material Handling Code Temperature Range Package Code SM4027PS U: SM4027PS XXXXX XXXXX - Lot Code Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - June, 2015 1 www.sinopowersemi.com SM4027PSU ® Absolute Maximum Ratings Symbol Parameter Rating VDSS Drain-Source Voltage -40 VGSS Gate-Source Voltage ±25 ID a Continuous Drain Current (VG S=-10V) a IDP 300µs Pulsed Drain Current Tested ID c Continuous Drain Current (VG S=-10V) I DP c 300µs Pulsed Drain Current Tested IS c I AS b TJ TA=70°C -16 TA=25°C -81 TC =25°C -74 TC =100°C -47 TC =25°C -298 L=0.5mH -25 Avalanche Energy, Single pulse L=0.5mH 156 Maximum Junction Temperature Storage Temperature Range PD a Maximum Power Dissipation c RθJC 150 -55 to 150 Maximum Power Dissipation RθJA a c V A -37 Avalanche Current, Single pulse TSTG PD -20 Diode Continuous Forward Current b E AS TA=25°C Unit Thermal Resistance-Junction to Ambient Thermal Resistance-Junction to Case TA=25°C 6.3 TA=70°C 4.0 TC =25°C 83 TC =100°C 33 t ≤ 10s 20 Steady State 60 Steady State 1.5 mJ °C W °C/W Note a：Surface Mounted on 1in pad area, t ≤ 10sec. RθJA steady state t = 999s. Note b：UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC). o Note c：The power dissipation PD is based on TJ(MAX) = 150 C, and it is useful for reducing junction-to-case thermal resistance (R θJC) when additional heat sink is used. 2 Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - June, 2015 2 www.sinopowersemi.com SM4027PSU ® Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) Test Conditions Min. Typ. Max. Unit -40 - - V - - -1 - - -30 -1.5 -2 -2.5 V µA Static Characteristics BV DSS Drain-Source Breakdown Voltage I DSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) d VGS=0V, IDS =-250µA VDS=-32V, V GS=0V TJ=85°C µA Gate Threshold Voltage VDS=VGS, I DS=-250µA Gate Leakage Current VGS=±20V, VDS=0V - - ±10 VGS=-20V, IDS=-25A - 6.6 8 VGS=-10V, IDS=-25A - 7.5 9.4 VGS=-4.5V, I DS=-15A - 11 15 ISD=-1A, V GS=0V - -0.75 -1 V - 23 - ns - 10 - nC - 3.8 7.6 Ω - 2780 3614 - 426 - - 331 - - 17 31 - 14 25 - 59 106 - 22 40 - 59 83 - 8 - - 16 - Drain-Source On-state Resistance mΩ Diode Characteristics VSD d Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Dynamic Characteristics e RG Gate Resistance C iss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON ) Turn-on Delay Time tr Turn-on Rise Time t d(OFF) Turn-off Delay Time tf VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=-20V, Frequency=1.0MHz VDD=-20V, RL =20Ω, IDS=-1A, V GEN=-10V, RG=6Ω Turn-off Fall Time Gate Charge Characteristics Qg ISD=-25A, dlSD /dt=100A/µs Gate-Source Charge Q gd Gate-Drain Charge ns e Total Gate Charge Qgs pF VDS=-20V, V GS=-10V, IDS=-25A nC Note d：Pulse test; pulse width≤300µs, duty cycle≤2%. Note e：Guaranteed by design, not subject to production testing. Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - June, 2015 3 www.sinopowersemi.com SM4027PSU ® Typical Operating Characteristics Drain Current 90 90 75 75 -ID - Drain Current (A) Ptot - Power (W) Power Dissipation 60 45 30 15 60 45 30 15 o 0 o T C=25 C 0 20 40 60 80 0 100 120 140 160 T C=25 C,VG=-10V 0 20 Tj - Junction Temperature (°C) 60 80 100 120 140 160 Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance 3 n) s(o d R 100 Normalized Transient Thermal Resistance 800 -ID - Drain Current (A) 40 it Lim 100µs 10 1ms 10ms 1 DC o TC=25 C 0.1 0.1 1 10 0.2 0.1 0.05 0.1 0.02 0.01 0.01 1E-3 Single Pulse o 1E-4 1E-6 100 RθJC :1.5 C/W 1E-5 1E-4 1E-3 0.01 0.1 0.5 Square Wave Pulse Duration (sec) -VDS - Drain - Source Voltage (V) Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - June, 2015 Duty = 0.5 1 4 www.sinopowersemi.com SM4027PSU ® Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 21 180 150 -5V 120 -4.5V RDS(ON) - On - Resistance (mΩ) -ID - Drain Current (A) VGS=-6,-7,-8,-9,-10,-20V 90 -4V 60 -3.5V 30 18 15 VGS=-4.5V 12 9 VGS=-10V 6 VGS=-20V 3 -3V 0 0 0 1 2 3 4 5 0 30 60 90 -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 1.6 36 Normalized Threshold Voltage (V) RDS(ON) - On - Resistance (mΩ) 30 24 18 12 6 2 4 6 8 10 12 14 16 18 -VGS - Gate - Source Voltage (V) Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - June, 2015 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 20 150 IDS=-250µA IDS=-25A 0 120 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 5 www.sinopowersemi.com SM4027PSU ® Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 100 1.8 VGS = -10V IDS = -25A -IS - Source Current (A) Normalized On Resistance 1.6 1.4 1.2 1.0 0.8 o T j=150 C 10 o Tj=25 C 1 0.6 o RON@Tj=25 C: 7.5mΩ 0.4 -50 -25 0 25 50 75 0.1 0.0 100 125 150 0.8 1.0 1.2 Capacitance Gate Charge -VGS - Gate-Source Voltage (V) 9 3500 3000 Ciss 2500 2000 1500 1000 Coss 500 16 24 VDS=-20V IDS=-25A 8 7 6 5 4 3 2 1 Crss 8 1.4 10 4000 C - Capacitance (pF) 0.6 -VSD - Source - Drain Voltage (V) Frequency=1MHz 0 0.4 Tj - Junction Temperature (°C) 4500 0 0.2 32 0 0 40 -VDS - Drain - Source Voltage (V) Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - June, 2015 10 20 30 40 50 60 QG - Gate Charge (nC) 6 www.sinopowersemi.com SM4027PSU ® Avalanche Test Circuit and Waveforms VDS tAV L DUT EAS RG VDD VDD tp IAS IL 0.01Ω VDS tp VDSX(SUS) Switching Time Test Circuit and Waveforms VDS RD td(on) tr DUT td(off) tf VGS 10% VGS RG VDD tp 90% VDS Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - June, 2015 7 www.sinopowersemi.com SM4027PSU ® Disclaimer Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer’s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing. Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - June, 2015 8 www.sinopowersemi.com SM4027PSU ® Package Information E A E1 c2 L4 H D D1 L3 b3 c b e SEE VIEW A 0 GAUGE PLANE SEATING PLANE 0.25 A1 L S Y M B O L A A1 b VIEW A TO-252-2 RECOMMENDED LAND PATTERN MILLIMETERS MIN. INCHES MAX. MIN. MAX. 2.18 2.39 0.086 0.094 - 0.13 - 0.005 0.50 0.89 0.020 0.035 0.215 b3 4.95 5.46 0.195 c 0.46 0.61 0.018 0.024 c2 0.46 0.89 0.018 0.035 0.245 D 5.33 6.22 0.210 D1 4.57 6.00 0.180 E 6.35 6.73 0.250 0.236 0.265 E1 3.81 6.00 0.150 0.236 e 2.29 BSC 6.25 MIN. 6.8 MIN. 6.6 3 MIN. 0.090 BSC H 9.40 10.41 0.370 0.410 L 0.90 1.78 0.035 0.070 L3 0.89 2.03 0.035 0.080 L4 - 1.02 - 0.040 0 0° 0° 8° 8° 2.286 1.5 MIN. 4.572 UNIT: mm Note : Follow JEDEC TO-252 . Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - June, 2015 9 www.sinopowersemi.com SM4027PSU ® Carrier Tape & Reel Dimensions P0 P2 P1 A B0 W F E1 OD0 K0 A0 A OD1 B B T SECTION A-A SECTION B-B H A d T1 Application A H 330.0±2.00 50 MIN. TO-252-2 T1 C d 16.4+2.00 13.0+0.50 1.5 MIN. -0.00 -0.20 P0 P1 P2 4.0±0.10 8.0±0.10 2.0±0.05 D0 D1 1.5+0.10 1.5 MIN. -0.00 D W E1 F 20.2 MIN. 16.0±0.30 1.75±0.10 7.50±0.05 T A0 B0 K0 0.6+0.00 6.80±0.20 10.40±0.20 2.50±0.20 -0.40 (mm) Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - June, 2015 10 www.sinopowersemi.com SM4027PSU ® Taping Direction Information TO-252-2 USER DIRECTION OF FEED Classification Profile Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - June, 2015 11 www.sinopowersemi.com SM4027PSU ® Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 60-120 seconds 150 °C 200 °C 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 60-150 seconds 217 °C 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 Time (tP)** within 5°C of the specified classification temperature (Tc) 20** seconds 30** seconds Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to TP) Liquidous temperature (TL) Time at liquidous (tL) Peak (Tp)* package body Temperature Time 25°C to peak temperature * Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) Package Thickness Volume mm