SM4027PSU
®
P-Channel Enhancement Mode MOSFET
Features
•
Pin Description
-40V/-74A,
D
RDS(ON)= 8mΩ (max.) @ VGS=-20V
RDS(ON)= 9.4mΩ (max.) @ VGS=-10V
RDS(ON)= 15mΩ (max.) @ VGS=-4.5V
•
•
•
•
S
G
HBM ESD capability level of 8KV typical
100% UIS + Rg Tested
Top View of TO-252-2
Reliable and Rugged
Lead Free and Green Devices Available (RoHS
D
Compliant)
Note : The diode connected between the gate and
source serves only as protection against ESD.
No gate overvoltage rating is implied.
G
Applications
•
Power Management in LCD TV Inverter.
S
P-Channel MOSFET
Ordering and Marking Information
Package Code
U：TO-252-2
Operating Junction Temperature Range
o
C：-55 to 150 C
Handling Code
TR：Tape & Reel
Assembly Material
G：Halogen and Lead Free Device
SM4027PS
Assembly Material
Handling Code
Temperature Range
Package Code
SM4027PS
U:
SM4027PS
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright Sinopower Semiconductor, Inc.
Rev. A.2 - June, 2015
1
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SM4027PSU
®
Absolute Maximum Ratings
Symbol
Parameter
Rating
VDSS
Drain-Source Voltage
-40
VGSS
Gate-Source Voltage
±25
ID a
Continuous Drain Current (VG S=-10V)
a
IDP
300µs Pulsed Drain Current Tested
ID c
Continuous Drain Current (VG S=-10V)
I DP c
300µs Pulsed Drain Current Tested
IS
c
I AS
b
TJ
TA=70°C
-16
TA=25°C
-81
TC =25°C
-74
TC =100°C
-47
TC =25°C
-298
L=0.5mH
-25
Avalanche Energy, Single pulse
L=0.5mH
156
Maximum Junction Temperature
Storage Temperature Range
PD a
Maximum Power Dissipation
c
RθJC
150
-55 to 150
Maximum Power Dissipation
RθJA a
c
V
A
-37
Avalanche Current, Single pulse
TSTG
PD
-20
Diode Continuous Forward Current
b
E AS
TA=25°C
Unit
Thermal Resistance-Junction to Ambient
Thermal Resistance-Junction to Case
TA=25°C
6.3
TA=70°C
4.0
TC =25°C
83
TC =100°C
33
t ≤ 10s
20
Steady State
60
Steady State
1.5
mJ
°C
W
°C/W
Note a：Surface Mounted on 1in pad area, t ≤ 10sec. RθJA steady state t = 999s.
Note b：UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
o
Note c：The power dissipation PD is based on TJ(MAX) = 150 C, and it is useful for reducing junction-to-case thermal
resistance (R θJC) when additional heat sink is used.
2
Copyright Sinopower Semiconductor, Inc.
Rev. A.2 - June, 2015
2
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SM4027PSU
®
Electrical Characteristics
Symbol
Parameter
(TA = 25°C unless otherwise noted)
Test Conditions
Min.
Typ.
Max.
Unit
-40
-
-
V
-
-
-1
-
-
-30
-1.5
-2
-2.5
V
µA
Static Characteristics
BV DSS
Drain-Source Breakdown Voltage
I DSS
Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)
d
VGS=0V, IDS =-250µA
VDS=-32V, V GS=0V
TJ=85°C
µA
Gate Threshold Voltage
VDS=VGS, I DS=-250µA
Gate Leakage Current
VGS=±20V, VDS=0V
-
-
±10
VGS=-20V, IDS=-25A
-
6.6
8
VGS=-10V, IDS=-25A
-
7.5
9.4
VGS=-4.5V, I DS=-15A
-
11
15
ISD=-1A, V GS=0V
-
-0.75
-1
V
-
23
-
ns
-
10
-
nC
-
3.8
7.6
Ω
-
2780
3614
-
426
-
-
331
-
-
17
31
-
14
25
-
59
106
-
22
40
-
59
83
-
8
-
-
16
-
Drain-Source On-state Resistance
mΩ
Diode Characteristics
VSD d
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Dynamic Characteristics
e
RG
Gate Resistance
C iss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON )
Turn-on Delay Time
tr
Turn-on Rise Time
t d(OFF)
Turn-off Delay Time
tf
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=-20V,
Frequency=1.0MHz
VDD=-20V, RL =20Ω,
IDS=-1A, V GEN=-10V,
RG=6Ω
Turn-off Fall Time
Gate Charge Characteristics
Qg
ISD=-25A, dlSD /dt=100A/µs
Gate-Source Charge
Q gd
Gate-Drain Charge
ns
e
Total Gate Charge
Qgs
pF
VDS=-20V, V GS=-10V,
IDS=-25A
nC
Note d：Pulse test; pulse width≤300µs, duty cycle≤2%.
Note e：Guaranteed by design, not subject to production testing.
Copyright Sinopower Semiconductor, Inc.
Rev. A.2 - June, 2015
3
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SM4027PSU
®
Typical Operating Characteristics
Drain Current
90
90
75
75
-ID - Drain Current (A)
Ptot - Power (W)
Power Dissipation
60
45
30
15
60
45
30
15
o
0
o
T C=25 C
0
20
40
60
80
0
100 120 140 160
T C=25 C,VG=-10V
0
20
Tj - Junction Temperature (°C)
60
80
100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
3
n)
s(o
d
R
100
Normalized Transient Thermal Resistance
800
-ID - Drain Current (A)
40
it
Lim
100µs
10
1ms
10ms
1
DC
o
TC=25 C
0.1
0.1
1
10
0.2
0.1
0.05
0.1
0.02
0.01
0.01
1E-3
Single Pulse
o
1E-4
1E-6
100
RθJC :1.5 C/W
1E-5
1E-4
1E-3
0.01
0.1 0.5
Square Wave Pulse Duration (sec)
-VDS - Drain - Source Voltage (V)
Copyright Sinopower Semiconductor, Inc.
Rev. A.2 - June, 2015
Duty = 0.5
1
4
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SM4027PSU
®
Typical Operating Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
21
180
150
-5V
120
-4.5V
RDS(ON) - On - Resistance (mΩ)
-ID - Drain Current (A)
VGS=-6,-7,-8,-9,-10,-20V
90
-4V
60
-3.5V
30
18
15
VGS=-4.5V
12
9
VGS=-10V
6
VGS=-20V
3
-3V
0
0
0
1
2
3
4
5
0
30
60
90
-VDS - Drain - Source Voltage (V)
-ID - Drain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
1.6
36
Normalized Threshold Voltage (V)
RDS(ON) - On - Resistance (mΩ)
30
24
18
12
6
2
4
6
8
10
12
14
16
18
-VGS - Gate - Source Voltage (V)
Copyright Sinopower Semiconductor, Inc.
Rev. A.2 - June, 2015
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
20
150
IDS=-250µA
IDS=-25A
0
120
0
25
50
75
100 125 150
Tj - Junction Temperature (°C)
5
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SM4027PSU
®
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
100
1.8
VGS = -10V
IDS = -25A
-IS - Source Current (A)
Normalized On Resistance
1.6
1.4
1.2
1.0
0.8
o
T j=150 C
10
o
Tj=25 C
1
0.6
o
RON@Tj=25 C: 7.5mΩ
0.4
-50 -25
0
25
50
75
0.1
0.0
100 125 150
0.8
1.0
1.2
Capacitance
Gate Charge
-VGS - Gate-Source Voltage (V)
9
3500
3000
Ciss
2500
2000
1500
1000
Coss
500
16
24
VDS=-20V
IDS=-25A
8
7
6
5
4
3
2
1
Crss
8
1.4
10
4000
C - Capacitance (pF)
0.6
-VSD - Source - Drain Voltage (V)
Frequency=1MHz
0
0.4
Tj - Junction Temperature (°C)
4500
0
0.2
32
0
0
40
-VDS - Drain - Source Voltage (V)
Copyright Sinopower Semiconductor, Inc.
Rev. A.2 - June, 2015
10
20
30
40
50
60
QG - Gate Charge (nC)
6
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SM4027PSU
®
Avalanche Test Circuit and Waveforms
VDS
tAV
L
DUT
EAS
RG
VDD
VDD
tp
IAS
IL
0.01Ω
VDS
tp
VDSX(SUS)
Switching Time Test Circuit and Waveforms
VDS
RD
td(on) tr
DUT
td(off) tf
VGS
10%
VGS
RG
VDD
tp
90%
VDS
Copyright Sinopower Semiconductor, Inc.
Rev. A.2 - June, 2015
7
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SM4027PSU
®
Disclaimer
Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making
great efforts to development high quality and better performance products to
satisfy all customers’ needs. However, a product may fail to meet customer’s
expectation or malfunction for various situations.
All information which is shown in the datasheet is based on Sinopower’s
research and development result, therefore, Sinopower shall reserve the right
to adjust the content and monitor the production.
In order to unify the quality and performance, Sinopower has been following
JEDEC while defines assembly rule. Notwithstanding all the suppliers
basically follow the rule for each product, different processes may cause
slightly different results.
The technical information specified herein is intended only to show the typical
functions of and examples of application circuits for the products. Sinopower
does not grant customers explicitly or implicitly, any license to use or exercise
intellectual property or other rights held by Sinopower and other parties.
Sinopower shall bear no responsible whatsoever for any dispute arising from
the use of such technical information.
The products are not designed or manufactured to be used with any
equipment, device or system which requires an extremely high level of
reliability, such as the failure or malfunction of which any may result in a direct
threat to human life or a risk of human injury. Sinopower shall bear no
responsibility in any way for use of any of the products for the above special
purposes. If a product is intended to use for any such special purpose, such
as vehicle, military, or medical controller relevant applications, please contact
Sinopower sales representative before purchasing.
Copyright Sinopower Semiconductor, Inc.
Rev. A.2 - June, 2015
8
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SM4027PSU
®
Package Information
E
A
E1
c2
L4
H
D
D1
L3
b3
c
b
e
SEE VIEW A
0
GAUGE PLANE
SEATING PLANE
0.25
A1
L
S
Y
M
B
O
L
A
A1
b
VIEW A
TO-252-2
RECOMMENDED LAND PATTERN
MILLIMETERS
MIN.
INCHES
MAX.
MIN.
MAX.
2.18
2.39
0.086
0.094
-
0.13
-
0.005
0.50
0.89
0.020
0.035
0.215
b3
4.95
5.46
0.195
c
0.46
0.61
0.018
0.024
c2
0.46
0.89
0.018
0.035
0.245
D
5.33
6.22
0.210
D1
4.57
6.00
0.180
E
6.35
6.73
0.250
0.236
0.265
E1
3.81
6.00
0.150
0.236
e
2.29 BSC
6.25 MIN.
6.8 MIN.
6.6
3 MIN.
0.090 BSC
H
9.40
10.41
0.370
0.410
L
0.90
1.78
0.035
0.070
L3
0.89
2.03
0.035
0.080
L4
-
1.02
-
0.040
0
0°
0°
8°
8°
2.286
1.5 MIN.
4.572
UNIT: mm
Note : Follow JEDEC TO-252 .
Copyright Sinopower Semiconductor, Inc.
Rev. A.2 - June, 2015
9
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SM4027PSU
®
Carrier Tape & Reel Dimensions
P0
P2
P1
A
B0
W
F
E1
OD0
K0
A0
A
OD1 B
B
T
SECTION A-A
SECTION B-B
H
A
d
T1
Application
A
H
330.0±2.00 50 MIN.
TO-252-2
T1
C
d
16.4+2.00 13.0+0.50 1.5 MIN.
-0.00
-0.20
P0
P1
P2
4.0±0.10
8.0±0.10
2.0±0.05
D0
D1
1.5+0.10 1.5 MIN.
-0.00
D
W
E1
F
20.2 MIN. 16.0±0.30 1.75±0.10 7.50±0.05
T
A0
B0
K0
0.6+0.00 6.80±0.20 10.40±0.20 2.50±0.20
-0.40
(mm)
Copyright Sinopower Semiconductor, Inc.
Rev. A.2 - June, 2015
10
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SM4027PSU
®
Taping Direction Information
TO-252-2
USER DIRECTION OF FEED
Classification Profile
Copyright Sinopower Semiconductor, Inc.
Rev. A.2 - June, 2015
11
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SM4027PSU
®
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
100 °C
150 °C
60-120 seconds
150 °C
200 °C
60-120 seconds
3 °C/second max.
3°C/second max.
183 °C
60-150 seconds
217 °C
60-150 seconds
See Classification Temp in table 1
See Classification Temp in table 2
Time (tP)** within 5°C of the specified
classification temperature (Tc)
20** seconds
30** seconds
Average ramp-down rate (Tp to Tsmax)
6 °C/second max.
6 °C/second max.
6 minutes max.
8 minutes max.
Preheat & Soak
Temperature min (Tsmin)
Temperature max (Tsmax)
Time (Tsmin to Tsmax) (ts)
Average ramp-up rate
(Tsmax to TP)
Liquidous temperature (TL)
Time at liquidous (tL)
Peak
(Tp)*
package
body
Temperature
Time 25°C to peak temperature
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Package
Thickness
Volume mm
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