LPL4459

LPL4459 Lonten P-channel -30V, -6.5A, 46mΩ Power MOSFET Description Product Summary These P-Channel enhancement mode power field VDSS -30V effect RDS(on).max@ VGS=-10V 46mΩ ID -6.5A transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy pulse in the avalanche and commutation mode. These devices are well suited Pin Configuration for high efficiency fast switching applications. Features ◆ -30V,-6.5A,RDS(ON).max=46mΩ@VGS=-10V ◆ Improved dv/dt capability ◆ Fast switching ◆ Green device available SOP-8 Applications ◆ PWM applications ◆ Load switch ◆ Portable Equipment Absolute Maximum Ratings Parameter Drain-Source Voltage P-Channel MOSFET Pb TA = 25°C unless otherwise noted Symbol Value Unit VDSS -30 V -6.5 A -4.1 A Continuous drain current ( TA = 25°C ) ID Continuous drain current ( TA= 100°C ) Pulsed drain current1) IDM -26 A Gate-Source voltage VGSS ±20 V PD 2.9 W TSTG -55 to +150 °C TJ -55 to +150 °C Symbol Value Unit RθJA 43 °C/W Power Dissipation ( TA = 25°C ) Storage Temperature Range Operating Junction Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient Version 1.2, May- 2019 1 www.lonten.cc LPL4459 Package Marking and Ordering Information Device Device Package Marking LPL4459 SOP-8 LPL4459 Electrical Characteristics Parameter TJ = 25°C unless otherwise noted Symbol Test Condition Min. Typ. Max. Unit Static characteristics Drain-source breakdown voltage BVDSS VGS=0 V, ID=-250uA -30 --- --- V Gate threshold voltage VGS(th) VDS=VGS, ID=-250uA -1.2 -1.7 -2.2 V VDS=-30 V, VGS=0 V, TJ = 25°C --- --- -1 μA VDS=-24V, VGS=0 V, TJ = 125°C --- --- -10 μA Drain-source leakage current IDSS Gate leakage current, Forward IGSSF VGS=20 V, VDS=0 V --- --- 100 nA Gate leakage current, Reverse IGSSR VGS=-20 V, VDS=0 V --- --- -100 nA VGS=-10 V, ID=-6.5 A --- 33 46 mΩ VGS=-4.5 V, ID=-5A --- 43 72 mΩ VDS =-5 V , ID=-6.5A --- 17 --- S --- 940 --- --- 103 --- Drain-source on-state resistance Forward transconductance RDS(on) gfs Dynamic characteristics Input capacitance Output capacitance Ciss Coss VDS = -15 V, VGS = 0 V, pF F = 1MHz Reverse transfer capacitance Crss --- 88 --- Turn-on delay time td(on) --- 3.9 --- VDD=-15V,VGS=-10V,ID=-6.5A, --- 33.2 --- Rg=3Ω --- 39.3 --- --- 9.2 --- --- 11 --- --- 2.44 --- --- 2.92 --- --- 14.6 --- Rise time tr ns Turn-off delay time td(off) Fall time tf Gate resistance Rg VGS=0V,VDS=0V,f=1MHz Ω Gate charge characteristics Gate to source charge Gate to drain charge Qgs Qgd VDS=-15 V, ID=-6.5A, nC VGS=-10 V Gate charge total Qg Drain-Source diode characteristics and Maximum Ratings Continuous Source Current IS --- --- -6.5 A Pulsed Source Current2) ISM --- --- -26 A Diode Forward Voltage VSD --- --- -1.2 V VGS=0V, IS=-1A, TJ=25℃ Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature. 2: Pulse Test：Pulse Width ≤300μs, Duty Cycle≤2％. Version 1.2, May- 2019 2 www.lonten.cc LPL4459 Electrical Characteristics Diagrams Figure 1. Typ. Output Characteristics Figure 2. Transfer Characteristics VGS=-4.5V,-5V,-6V,-7V,-8V,-9V,-10V Common Source VDS= -5 V Pulse test Common Source TA = 25°C Pulse test VGS=-4V -ID -Drain current (A) -ID-Drain current (A) From Bottom to Top VGS=-3.5V VGS=-3V 125°C 25°C VGS=-2.5V -VDS -Drain−source voltage (V) Characteristics Capacitance (pF) Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Ciss Notes: f = 1 MHz VGS=0 V Coss Figure 4. Gate Charge Waveform Vgs = -10V -VGS -Gate-Source Voltage (V) Figure 3. Capacitance -VGS -Gate−source voltage (V) Vds = -15 V ID = -6.5 A Crss -VDS -Drain-Source Voltage (V) Total Gate Charge QG (nC) 125°C 25°C Figure 6. Rdson-Drain Current ON-Resistance Rdson (ohm) -IS -Reverse Drain current (A) Figure 5. Body-Diode Characteristics -VSD-Source-Drain Voltage (V) Version 1.2, May- 2019 VGS = -4.5V VGS = -10V -ID-Drain Current (A) 3 www.lonten.cc LPL4459 Figure 7. Rdson-Junction Temperature(℃) Figure 8. Rds(on) vs Gate Voltage ON-Resistance Rdson (mohm) Normalized On-Resistance ID = -6.5A VGS = -10V ID = -6.5A T -Junction Temperation (°C) -VGS -Gate−source voltage (V) J Normalized Drain to Source Voltage Figure 9. BVdss vs. Junction temperature(℃) Figure 10. Maximum Safe Operating Area -ID-Drain current (A) ID = -250uA T -Junction Temperation (°C) -VDS -Drain-Source Voltage (V) J Figure 11. Normalized Maximum Transient Thermal Impedance (RthJA) Normalized Transient θJA T J,PK R =T +P C In descending oder DM .Z θJC .RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse =43℃/W θJA Z Thermal Resistance D=Ton/T Single Pulse Pulse Width t (s) Version 1.2, May- 2019 4 www.lonten.cc LPL4459 Test Circuit & Waveform Figure 8. Gate Charge Test Circuit & Waveform Figure 9. Resistive Switching Test Circuit & Waveforms Figure 10. Unclamped Inductive Switching (UIS) Test Circuit & Waveform Figure 11. Diode Recovery Circuit & Waveform Version 1.2, May-2019 5 www.lonten.cc LPL4459 Mechanical Dimensions for SOP-8 COMMON DIMENSIONS SYMBOL MILLIMETERS INCHS MIN MAX MIN MAX A 1.45 1.75 0.057 0.069 A1 0.05 0.25 0.002 0.010 A2 1.35 1.55 0.053 0.061 b 0.35 0.45 0.014 0.018 c 0.19 0.27 0.007 0.011 D 4.80 5.00 0.189 0.197 E 3.78 3.98 0.149 0.157 e 1.27 TYP. 0.050 TYP. H 5.80 6.20 0.228 0.244 L 0.40 1.00 0.016 0.039 θ 0° 8° 0° 8° SOP-8 Part Marking Information Part Number LPL4459 YWW “YWW” Date Code Version 1.2, May-2019 6 www.lonten.cc LPL4459 Disclaimer The content specified herein is for the purpose of introducing LONTEN's products (hereinafter "Products"). The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. LONTEN does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of the Products or technical information described in this document. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). LONTEN shall bear no responsibility in any way for use of any of the Products for the above special purposes. Although LONTEN endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a LONTEN product. The content specified herein is subject to change for improvement without notice. When using a LONTEN product, be sure to obtain the latest specifications. Version 1.2, May-2019 7 www.lonten.cc