HY19P03D

HY19P03 D/U/V P-Channel Enhancement Mode MOSFET Feature  Pin Description -30V/-90A RDS(ON)= 4.8mΩ(typ.)@VGS = 10V RDS(ON)= 6.5mΩ(typ.)@VGS = 4.5V  100% avalanche tested  Reliable and Rugged  Lead Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications  Power Management in DC/DC converter. P-Channel MOSFET Ordering and Marking Information Package Code D U V HY19P03 HY19P03 HY19P03 YYXXXJWW G YYXXXJWW G YYXXXJWW G D: TO-252-2L Date Code YYXXX WW U: TO-251-3L V:TO-251-3S Assembly Material G:Halogen Free Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HOOYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and Advise customers to obtain the latest version of relevant information to verify before placing orders. www.hooyi.cc V2.1 1 HY19P03 D/U/V Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (Tc=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ±20 V Maximum Junction Temperature 150 °C -55 to 150 °C Tc=25°C -90 A Tc=25°C -360 A Tc=25°C -90 A Tc=100°C -59 A Tc=25°C 50 W Tc=100°C 20 W TJ TSTG Storage Temperature Range IS Drain Current-Continuous Mounted on Large Heat Sink Note: IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RJC Thermal Resistance, Junction-to-Case 2.5 °C/W RJA Thermal Resistance, Junction-to-Ambient ** 110 °C/W EAS SinglePulsed-Avalanche Energy *** 358*** mJ * ** *** L=0.3mH Repetitive rating; pulse width limited by max junction temperature. Surface mounted on FR-4 board. Limited by TJmax , starting TJ=25°C, L = 0.3mH, RG= 25Ω, VGS =10V. Electrical Characteristics(Tc =25°C Unless Otherwise Noted) Symbol Parameter Test Conditions HY19P03 Unit Min Typ Max VGS=0V,IDS=250uA -30 - - V VDS=-30V, VGS=0V - - -1 uA - - -10 uA -3.0 V ±100 nA Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current VGS(th) IGSS RDS(ON)* TJ=55°C Gate Threshold Voltage VDS=VGS, IDS=250uA -1.0 -1.7 Gate-Source Leakage Current VGS=±20V,VDS=0V - - VGS=-10V,ID= -45A - 4.8 6 mΩ 6.4 8 mΩ - -0.82 -1.3 V - 25 - ns - 20 - nC Drain-Source On-state Resistance VGS=-4.5V,ID= -45A Diode Characteristics VSD* Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD= -45A,VGS=0V ISD= -45A,dI/dt=100A/us www.hooyi.cc V2.1 2 HY19P03 D/U/V Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted) Symbol Parameter Test Conditions HY19P03 Min Typ Max - 3.5 - - 4787 - Unit Dynamic Characteristics Ciss Input Capacitance VGS=0V,VDS=0V,F=1 MHz VGS=0V, Coss Output Capacitance VDS=-15V, - 461 - Crss Reverse Transfer Capacitance Frequency=1.0MHz - 329 - td(ON) Turn-on Delay Time - 12 - Tr Turn-on Rise Time VDD= -15V,RG=3Ω, - 16 - td(OFF) Turn-off Delay Time IDS= -45A,VGS=10V - 75 - - 37 - - 90 - - 7.6 - - 19 - RG Tf Gate Resistance Turn-off Fall Time Gate Charge Ω pF ns Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = -24V, VGS= -10V， ID= -45A, Note: *Pulse test; pulse width ≤ 300us，duty cycle ≤ 2% www.hooyi.cc V2.1 3 nC HY19P03 D/U/V Typical Operating Characteristics -ID-Drain Current(A) Voltage Figure 2: Drain Current Power Dissipation (w) Figure 1: Power Dissipation Tc-Case Temperature(℃) Impedance Thermal Normalized Transient Figure 4: Thermal Transient Impedance Zθ jc Voltage -ID-Drain Current(A) Figure 3: Safe Operation Area Tc-Case Temperature(℃) Maximum Effective Transient Thermal Impedance, Junction-to-Case -VDS-Drain-Source Voltage(V) -VDS-Drain-Source Voltage (V) Voltage RDS(ON)-ON-Resistance(Ω) Figure 6: Drain-Source On Resistance Voltage -ID-Drain Current(A) Figure 5: Output Characteristics - ID-Drain Current(A) www.hooyi.cc V2.1 4 HY19P03 D/U/V Typical Operating Characteristics(Cont.) Voltage -IS-Source Current (A) Figure 8: Source-Drain Diode Forward Voltage Normalized On-Resistance Figure 7: On-Resistance vs. Temperature Tj-Junction Temperature (℃) -VDS-Drain-Source Voltage (V) Voltage -VGS-Gate-Source Voltage (V) Figure 10: Gate Charge Characteristics Voltage C-Capacitance(pF) Figure 9: Capacitance Characteristics -VSD-Source-Drain Voltage(V) Q G-Gate Charge (nC) www.hooyi.cc V2.1 5 HY19P03 D/U/V Avalanche Test Circuit Switching Time Test Circuit Gate Charge Test Circuit www.hooyi.cc V2.1 6 HY19P03 D/U/V Device Per Unit Package Type Unit Quantity TO-252-2L TO-251-3L TO-251-3S Tube Tube Tube 75 75 75 Package Information TO-252-2L COMMON DIMENSIONS SYMBOL mm MIN NOM MAX A 2.20 2.30 2.40 A1 0.00 - 0.20 A2 0.97 1.07 1.17 b 0.68 0.78 0.90 b3 5.20 5.33 5.50 c 0.43 0.53 0.63 D 5.98 6.10 6.22 D1 5.30REF E 6.40 6.60 6.80 E1 4.63 - - e www.hooyi.cc 2.286BSC H 9.40 10.10 10.50 L 1.38 1.50 1.75 L1 2.90REF L2 0.51BSC L3 0.88 - 1.28 L4 - - 1.00 L5 1.65 1.80 1.95 θ 0° - 8° V2.1 7 HY19P03 D/U/V TO-251-3L COMMON DIMENSIONS SYMBOL mm MIN NOM MAX A 2.20 2.30 2.40 A2 0.97 1.07 1.17 b 0.68 0.78 0.90 b2 0.00 0.04 0.10 b2' 0.00 0.04 0.10 b3 5.20 5.33 5.50 c 0.43 0.53 0.63 D 5.98 6.10 6.22 D1 5.30REF E 6.40 6.60 6.80 E1 4.63 - - e 2.286BSC H 16.22 16.52 16.82 L1 9.15 9.40 9.65 L3 0.88 1.02 1.28 L5 1.65 1.80 1.95 www.hooyi.cc V2.1 8 HY19P03 D/U/V TO-251-3S COMMON DIMENSIONS SYMBOL mm MIN NOM MAX A 2.20 2.30 2.40 A2 0.97 1.07 1.17 b 0.68 0.78 0.90 b3 5.20 5.33 5.50 c 0.43 0.53 0.63 D 5.98 6.10 6.22 D1 5.30REF E 6.40 6.60 6.80 E1 4.63 - - e 2.286BSC H 10.00 11.22 11.44 L1 3.90 4.10 4.30 L3 0.88 1.02 1.28 L5 1.65 1.80 1.95 www.hooyi.cc V2.1 9 HY19P03 D/U/V Classification Profile Classification Reflow Profiles Profile Feature Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to TP) Liquidous temperature (TL) Time at liquidous (tL) Peak package body Temperature (Tp)* Time (tP)** within 5°C of the specified classification temperature (Tc) Average ramp-down rate (Tp to Tsmax) Time 25°C to peak temperature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 150 °C 200 °C 60-120 seconds 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 217 °C 60-150 seconds 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 20** seconds 30** seconds 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. *Tolerance for peak profile Temperature (T p) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. www.hooyi.cc V2.1 10 HY19P03 D/U/V Table 1.SnPb Eutectic Process – Classification Temperatures (Tc) Package Volume mm³ Volume mm³ Thickness