C3D03060F
Silicon Carbide Schottky Diode
Z-Rec® Rectifier (Full-Pak)
Features
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600-Volt Schottky Rectifier
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on VF
IF (TC=110˚C) =
3A
Q c
6.7 nC
=
TO-220-F2
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
PIN 1
PIN 2
Applications
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600 V
Package
Benefits
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VRRM =
Switch Mode Power Supplies (SMPS)
Boost diodes in PFC or DC/DC stages
Free Wheeling Diodes in Inverter stages
AC/DC converters
Part Number
Package
Marking
C3D03060F
TO-220-F2
C3D03060
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Unit
Test Conditions
VRRM
Repetitive Peak Reverse Voltage
600
V
VRSM
Surge Peak Reverse Voltage
600
V
VDC
DC Blocking Voltage
600
V
5
3
2
A
TC=25˚C
TC=112˚C
TC=135˚C
IF
Continuous Forward Current
IFRM
Repetitive Peak Forward Surge Current
20
15
A
TC=25˚C, tP=10 mS, Half Sine Wave D=0.3
TC=110˚C, tP=10 mS, Half Sine Wave D=0.3
IFSM
Non-Repetitive Peak Forward Surge Current
28
22
A
TC=25˚C, tP=10 mS, Half Sine Wave D=0.3
TC=110˚C, tP=10 mS, Half Sine Wave D=0.3
IFSM
Non-Repetitive Peak Forward Surge Current
100
A
TC=25˚C, tP=10 µS, Pulse
Ptot
Power Dissipation
12.5
5.4
W
TC=25˚C
TC=110˚C
dV/dt
Diode dV/dt ruggedness
200
V/ns
VR=0-600V
TJ , Tstg
Operating Junction and Storage Temperature
-55 to
+175
˚C
1
8.8
Nm
lbf-in
TO-220 Mounting Torque
1
Value
C3D03060F Rev. D, 04-2016
M3 Screw
6-32 Screw
Note
Fig. 3
Fig. 4
Electrical Characteristics
Symbol
Parameter
Typ.
Max.
Unit
VF
Forward Voltage
1.5
1.8
1.7
2.4
V
IR
Reverse Current
4
8
20
80
QC
Total Capacitive Charge
C
EC
Test Conditions
Note
IF = 3 A TJ=25°C
IF = 3 A TJ=175°C
Fig. 1
μA
VR = 600 V TJ=25°C
VR = 600 V TJ=175°C
Fig. 2
7.6
nC
VR = 400 V, IF = 3A
di/dt = 500 A/μS
TJ = 25°C
Fig. 5
Total Capacitance
166
14
11
pF
VR = 0 V, TJ = 25°C, f = 1 MHz
VR = 200 V, TJ = 25˚C, f = 1 MHz
VR = 400 V, TJ = 25˚C, f = 1 MHz
Fig. 6
Capacitance Stored Energy
1.1
μJ
VR = 400 V
Fig. 7
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol
RθJC
Parameter
Typ.
Unit
Note
12
°C/W
Fig. 8
Thermal Resistance from Junction to Case
Typical Performance
10
10
TJ = -55 °C
Reverse LeakageICurrent,
(mA) IRR (uA)
TJ = 25 °C
TJ = 75 °C
6
TJ = 125 °C
4
2
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
FowardVFVoltage,
(V) VF (V)
Figure 1. Forward Characteristics
2
8
TJ = 175 °C
TJ = 125 °C
6
TJ = 75 °C
TJ = 25 °C
R
TJ = 175 °C
F
Foward I
Current,
(A) IF (A)
8
C3D03060F Rev. D, 04-2016
3.5
4.0
4
TJ = -55 °C
2
0
0
200
400
600
800
(V) VR (V)
ReverseVVoltage,
R
Figure 2. Reverse Characteristics
1000
Typical Performance
18
14
10% Duty
20% Duty
30% Duty
50% Duty
70% Duty
DC
16
14
10
10
PTot (W)
IF(peak) (A)
12
12
8
6
8
6
4
4
2
2
0
25
50
75
100
125
150
0
175
25
50
75
TC ˚C
175
Conditions:
TJ = 25 °C
Ftest = 1 MHz
Vtest = 25 mV
160
140
Capacitance
C (pF) (pF)
8
6
C
CapacitiveQCharge,
(nC) QC (nC)
180
4
120
100
80
60
40
2
20
0
0
0
100
200
300
400
500
600
700
(V) VR (V)
ReverseVVoltage,
R
Figure 5. Total Capacitance Charge vs. Reverse Voltage
3
150
Figure 4. Power Derating
Conditions:
TJ = 25 °C
10
125
TC ˚C
Figure 3. Current Derating
12
100
C3D03060F Rev. D, 04-2016
0
1
10
100
(V) VR (V)
ReverseVVoltage,
R
Figure 6. Capacitance vs. Reverse Voltage
1000
Typical Performance
3
2
1.5
C
Capacitance StoredE Energy,
(mJ) EC (µJ)
2.5
1
0.5
0
0
100
200
300
400
500
600
700
Reverse
V Voltage,
(V) VR (V)
R
Figure 7. Capacitance Stored Energy
Thermal Resistance (˚C/W)
10
0.5
0.3
1
0.1
0.05
0.02
100E-3
0.01
SinglePulse
10E-3
1E-6
10E-6
100E-6
1E-3
10E-3
T (Sec)
100E-3
Figure 8. Transient Thermal Impedance
4
C3D03060F Rev. D, 04-2016
1
10
100
Package Dimensions
Package TO-220-F2
E
POS
A
F
B
G
C
H
Inches
Max
Min
Max
A
0.177
0.194
4.5
4.93
2.74
B
0.092
0.108
2.34
C
0.256
0.272
6.5
6.9
D
0.098
0.117
2.5
2.96
E
0.39
0.408
9.9
10.36
F
0.117
0.134
2.98
3.4
G
0.122
0.138
3.1
3.5
H
0.617
0.633
15.67
16.07
L
0.039
0.055
1
1.4
M
0.016
0.036
0.4
0.91
0.200 TYP
N
P
L
D
S
5.08 TYP
P
0.114
0.154
1.9
3.9
S
0.476
0.519
12.1
13.18
T
0.016
0.031
0.4
0.8
NOTE:
1. Dimension L, M, T apply for Solder Dip Finish
T
M
Millimeters
Min
PIN 1
N
PIN 2
Recommended Solder Pad Layout
TO-220-2
Part Number
Package
Marking
C3D03060F
TO-220-F2
C3D03060
Note: Recommended soldering profiles can be found in the applications note here:
http://www.cree.com/power_app_notes/soldering
5
C3D03060F Rev. D, 04-2016
Diode Model
Diode Model CSD10060
Vf
Vf T T==VTV+T+If*R
If*RT T
V
-3 -3)
0.96+(T
* -1.1*10
VTT==0.92
+ (Tj * J-1.35*10
)
-4
-3
R
0.145+(T
J* 9.5*10
RT =0.052
+ (T * 0.29*10
) )
T=
j
Note: Tj = Diode Junction Temperature In Degrees Celsius,
valid from 25°C to 175°C
VT
RT
Notes
• RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Wolfpseed representative or from the Product Ecology section of our website at http://
www.wolfspeed.com/Power/Tools-and-Support/Product-Ecology.
• REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
•
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control
systems, or air traffic control systems.
Related Links
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Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes
Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2
SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i
Copyright © 2016 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
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C3D03060F Rev. D, 04-2016
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power