RB521C30-2/TR

RB521C30 RB521C30 Schottky Barrier Diode http://www.willsemi.com Features  100mA Average rectified forward current  Low forward voltage  Low leakage current  Small package SOD-923 SOD-923 Pin1 Applications  Pin2 Circuit Low Current rectification Absolute maximum ratings Marking Parameter Symbol Value Unit Reverse voltage (repetitive peak) VRM 30 V Reverse voltage (DC) VR 30 V Average rectified forward current IO 100 mA IFSM 0.5 A TJ 150 O C Operating temperature Topr -40 ~ 125 O C Storage temperature Tstg -40 ~ 150 O C Peak forward surge current (8.3ms single sine pluse) Junction temperature Electronics characteristics (TA=25oC) Parameter Symbol Condition Min. Typ. Max. Unit Reverse Voltage VR IR=100uA 30 Forward Voltage VF IF=10mA 0.35 V IF=100mA 0.47 V Reverse current IR VR=10V 6 uA VR=30V 15 uA Junction capacitance CJ VR=5V, F=1MHz 21 pF Thermal Resistance Rθ(JA) Junction to Ambient 650 K/W Order Informations Device RB521C30-2/TR Package Marking Shipping SOD-923 1* (1) 10000/Reel&Tape Note 1：*= Month code(A~Z);1= Device code; Will Semiconductor Ltd. 1 Jan, 2019 - Rev. 1.3 RB521C30 Typical characteristics (Ta=25oC, unless otherwise noted) 1000 o 150 C o Reverse Current(uA) Forward Current(A) 0.1 o 125 C o 65 C o 85 C 0.01 o 25 C o 0C 1E-3 o -50 C o 85 C 100 125 C 10 o 65 C 1 o 0C o 25 C 0.1 o -50 C 1E-4 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.01 5 10 Forward Voltage(V) 20 25 30 Reverse Voltage(V) Forward voltage vs. Forward current Reverse current vs. Reverse voltage 125 100 100 f=1MHz 75 Cj(pF) Forward Current(mA) 15 10 50 25 0 0 25 50 75 100 125 1 150 o Ambient temperature( C) 0 5 10 15 20 25 Reverse Voltage(V) Forward current derating curve Junction capacitance vs. Reverse voltage Maximum Peak Surge Forward Current-IFSM(A) 6 IFSM T 4 2 0 0 10 20 30 Single Pluse Width-T(ms) IFSM-T Characteristics Will Semiconductor Ltd. 2 Jan, 2019 - Rev. 1.3 RB521C30 PACKAGE OUTLINE DIMENSIONS SOD-923 E A E1 Ⅱ b D Ⅰ SIDE VIEW TOP VIEW c θ Ⅰ Ⅱ θ SIDE VIEW Symbol Dimensions in Millimeters Min. Typ. Max. A 0.35 0.40 0.45 D 0.55 0.60 0.65 E 0.90 1.00 1.10 E1 0.70 0.80 0.90 b 0.15 - 0.30 c - - 0.20 7°Ref θ Will Semiconductor Ltd. 3 Jan, 2019 - Rev. 1.3 RB521C30 TAPE AND REEL INFORMATION Reel Dimensions RD Reel Dimensions Tape Dimensions W P1 Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 RD Reel Dimension W Overall width of the carrier tape P1 Pitch between successive cavity centers Pin1 Pin1 Quadrant Will Semiconductor Ltd. User Direction of Feed 7inch 13inch 1 8mm 12mm 16mm 2mm 4mm 8mm Q1 Q2 Q3 4 Q4 Jan, 2019 - Rev. 1.3