HSS3407A

HSS3407A P-Ch 30V Fast Switching MOSFETs Product Summary Description VDS -30 V ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching RDS(ON),max 70 mΩ and load switch applications. ID -3.1 A The HSS3407A is the high cell density trenched P- The HSS3407A meet the RoHS and Green Product requirement, with full function reliability approved. l l l l SOT23s Pin Configuration Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Rating Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ IDM 10s Steady State Units -30 V ±20 V Continuous Drain Current, VGS @ -10V 1 -3.7 -3.1 A Continuous Drain Current, VGS @ -10V 1 -3.0 -2.6 A Pulsed Drain Current 2 -15 A Total Power Dissipation 3 1.32 PD@TA=70℃ Total Power Dissipation 3 0.84 TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ PD@TA=25℃ 1 W 0.64 W Thermal Data Symbol RθJA RθJA RθJC www.hs-semi.cn Parameter Thermal Resistance Junction-Ambient 1 1 Thermal Resistance Junction-Ambient (t ≤10s) Thermal Resistance Junction-Case Ver 2.0 1 Typ. Max. Unit --- 125 ℃/W --- 95 ℃/W --- 80 ℃/W 1 HSS3407A P-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage 2 Min. Typ. Max. Unit VGS=0V , ID=-250uA -30 --- --- V Reference to 25℃ , ID=-1mA --- -0.023 --- V/℃ VGS=-10V , ID=-3A --- 56 70 VGS=-4.5V , ID=-2A --- 73 95 -1.2 -1.6 -3 V --- 4 --- mV/℃ VDS=-24V , VGS=0V , TJ=25℃ --- --- -1 VDS=-24V , VGS=0V , TJ=55℃ --- --- -5 VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-3A --- 11 --- S Qg Total Gate Charge (-4.5V) --- 6.4 9.0 Qgs Gate-Source Charge --- 2.3 3.2 Qgd Gate-Drain Charge --- 1.9 2.7 Td(on) VDS=-15V , VGS=-4.5V , ID=-3A nC --- 2.8 5.6 Rise Time VDD=-15V , VGS=-10V , RG=3.3Ω, --- 8.4 15.1 Turn-Off Delay Time ID=-3A --- 39 78.0 Fall Time --- 6 12.0 Ciss Input Capacitance --- 583 816 Coss Output Capacitance --- 100 140 Crss Reverse Transfer Capacitance --- 80 112 Min. Typ. Max. Unit --- --- -3.1 A --- --- -15 A --- --- -1 V --- 7.8 --- nS --- 2.5 --- nC Tr Td(off) Tf Turn-On Delay Time uA VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS ISM Parameter Continuous Source Current Pulsed Source Current 2,4 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Conditions 1,4 VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ IF=-3A , dI/dt=100A/µs , TJ=25℃ Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSS3407A P-Ch 30V Fast Switching MOSFETs Typical Characteristics 165 ID=-3A RDSON (mΩ) 135 105 75 45 2 4 6 -VGS (V) 8 10 Fig.2 On-Resistance v.s Gate-Source Fig.1 Typical Output Characteristics -IS -Source Current(A) 10 8 6 TJ=150℃ TJ=25℃ 4 2 0 0 0.2 0.4 0.6 0.8 1 -VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics 1.8 Normalized on resistance Normalized -VGS(th) 1.5 1.0 0.5 1.4 1.0 0.6 0.2 0.0 -50 0 50 100 TJ ,Junction Temperature (℃) 150 Fig.5 Normalized VGS(th) vs. TJ www.hs-semi.cn -50 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized R DSON vs TJ Ver 2.0 3 HSS3407A P-Ch 30V Fast Switching MOSFETs Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (R θJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM 0.001 TON SINGLE PULSE T D = TON/T TJpeak = TC + PDM x RθJC 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform www.hs-semi.cn Fig.11 Gate Charge Waveform Ver 2.0 4 HSS3407A P-Ch 30V Fast Switching MOSFETs Ordering Information Part Number HSS3407A www.hs-semi.cn Package code SOT-23 Ver 2.0 Packaging 3000/Tape&Reel 5