AO3404A

UMW R UMW AO3404A N-Channel Enhancement MOSFET SOT–23 Features VDS (V) = 30V ID =5.8 A (VGS=10V) RDS(ON) 25 m (VGS = 10V) RDS(ON) 36 m (VGS = 4.5V) 1. GATE 2. SOURCE 3. DRAIN D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Ta=25℃ ID Ta=100℃ Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient IDM Ta=25℃ PD Ta=70℃ t ≤ 5sec RthJA Steady State Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range www.umw-ic.com 1 Unit V 5.8 4.9 A 20 1.4 1 W 90 125 RthJL 60 TJ 150 Tstg -55 to 150 ℃/W ℃ 友台半导体有限公司 UMW R UMW AO3404A N-Channel Enhancement MOSFET Electrical Characteristics Ta = 25 Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS Testconditions 5 VDS=0V, VGS = + 20V On state drain current ID(ON) VGS=4.5V, VDS=5V 1 A 1.9 20 A 36 m VSD IS=1A 10 S 0.76 IS Coss Crss Output Capacitance Rg V VGS=4.5V, ID=5.0A Diode Forward Voltage Gate resistance nA 3 m VDS=5V, ID=5.8A Input Capacitance 100 25 gFS Ciss A VGS=10V, ID=5.8A Forward Transconductance Reverse Transfer Capacitance Unit V VDS=24V, VGS=0V ,TJ=55 VDS=VGS ID=250 Maximum Body-Diode Continuous Current Max 1 VGS(th) RDS(ON) Typ VDS=24V, VGS=0V Gate Threshold Voltage Static Drain-Source On-Resistance Min 30 ID=250 A, VGS=0V 680 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 1 V 2.5 A 820 pF 102 pF 77 pF 3 3.6 Total Gate Charge (10V) Qg 13.88 17 nC Total Gate Charge (4.5V) Qg 6.78 8.1 nC Gate Source Charge Qgs VGS=10V, VDS=15V, ID=5.8A 1.8 nC Gate Drain Charge Qgd 3.12 Turn-On Rise Time tD(on) 4.6 6.5 ns Turn-Off DelayTime tr 3.8 5.7 ns Turn-Off Fall Time tD(off) VGS=10V, VDS=15V, RL=2.7 ,RGEN=3 Turn-On DelayTime tf Body Diode Reverse Recovery Time trr IF=5.8A, dI/dt=100A/ Body Diode Reverse Recovery Charge Qrr IF=5.8A, dI/dt=100A/ s www.umw-ic.com 2 s nC 20.9 30 ns 5 7.5 ns 16.1 21 ns 7.4 10 nC 友台半导体有限公司 R UMW UMW AO3404A N-Channel Enhancement MOSFET ■ Typical Characterisitics 10V 20 6V 5V 4.5V 25 ID (A) 20 15 3.5V 10 12 8 125°C 4 VGS=3V 5 VDS=5V 16 4V ID(A) 30 25°C 0 0 0 1 2 3 4 0 5 0.5 60 2 2.5 3 3.5 4 4.5 Normalized On-Resistance (Ω) 1.6 50 RDS(ON) (mΩ ) 1.5 VGS (Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics VGS=4.5V 40 30 20 VGS=10V 10 0 5 10 15 VGS=10V ID=5A 1.5 1.4 VGS=4.5V 1.3 1.2 1.1 1 0.9 0.8 20 0 ID (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 100 150 200 Temperature ( °C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 70 60 1.0E+00 ID=5A 50 IS Amps RDS(ON) (mΩ ) 1 125°C 40 1.0E-01 1.0E-02 125°C 1.0E-03 30 25°C 1.0E-04 25°C 20 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage www.umw-ic.com 3 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body diode characteristics 友台半导体有限公司 R UMW UMW AO3404A N-Channel Enhancement MOSFET ■ Typical Characterisitics 10 f=1MHz VGS=0V 900 800 Capacitance (pF) 8 VGS (Volts) 1000 VDS=15V ID=5.8A 6 4 2 700 Ciss 600 500 400 300 200 Coss 100 0 0 2 4 6 8 10 12 Crss 0 14 0 Qg (nC) Figure 7: Gate-Charge characteristics 100 10ms 1s DC 0.1 1 10 100 VDS (Volts) 30 20 10 D=T on/T TJ,PK=T A+PDM.ZθJA.RθJA RθJA=90°C/W 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased. Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 25 10 10s 0.1 20 TJ(Max)=150°C TA=25°C 30 100µs 10µs 0.1s 1 15 40 Power W ID (Amps) 1ms 10 10 VDS (Volts) Figure 8: Capacitance Characteristics TJ(Max)=150°C TA=25°C RDS(ON) limited 5 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 www.umw-ic.com 0.0001 0.001 0.01 T 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4 100 1000 友台半导体有限公司 UMW R UMW AO3404A N-Channel Enhancement MOSFET Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions In Millimeters Min. Max. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP. 1.800 2.000 0.550 REF. 0.300 0.500 0° 8° Dimensions In Inches Min. Max. 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP. 0.071 0.079 0.022 REF. 0.012 0.020 0° 8° X4SV 38 Marking U Ordering information Order code Package Baseqty Deliverymode UMW AO3404A SOT-23 3000 Tape and reel www.umw-ic.com 5 友台半导体有限公司