HY15P03C2

HY15P03C2 Single P-Channel Enhancement Mode MOSFET Feature  Pin Description -30V/-60A D D D D D D D D RDS(ON)= 4.8mΩ(typ.) @VGS =-10V RDS(ON)= 6.8mΩ(typ.) @VGS =-4.5V  Reliable and Rugged  Halogen Free Devices Available (RoHS Compliant) S S S G G S S S Pin1 PPAK5*6-8L Applications  High Frequency Point-of-Load Synchronous Buck Converter  Networking DC-DC Power System  Power Tool Application Single P-Channel MOSFET Ordering and Marking Information Package Code C2 C2: PPAK5*6-8L HY15P03 Date Code YYXXX WW YYXXXJWW G Assembly Material G:Halogen Free Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate TermiNation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this product and/or to this document at any time without notice. www.hymexa.com 1 V1.0 HY15P03C2 Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (Tc=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ±20 V Maximum Junction Temperature 150 °C -55 to 150 °C Tc=25°C -60 A Tc=25°C -240 A Tc=25°C -60 A Tc=100°C -38 A Tc=25°C 52 W Tc=100°C 21 W TJ TSTG IS Storage Temperature Range Source Current-Continuous(Body Diode) Mounted on Large Heat Sink Note: IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RJC Thermal Resistance, Junction-to-Ambient 2.4 °C/W RJA Thermal Resistance, Junction-to-Ambient ** 35 °C/W EAS SinglePulsed-Avalanche Energy *** 296.2 mJ L=0.1mH * ** Repetitive rating；pulse width limited by max.junction temperature. Surface mounted on FR-4 board. *** Limited by TJmax , starting TJ=25°C , L = 0.1mH, RG= 25Ω, VGS =10V. Electrical Characteristics(Tc =25°C Symbol Unless Otherwise Noted) Parameter Test Conditions HY15P03 Unit Min Typ. Max -30 - - V - - -1 μA - - -50 μA -1.0 -1.6 -3.0 V Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current VGS(th) IGSS RDS(ON)* VGS=0V,IDS=-250μA VDS=-20V,VGS=0V TJ=125°C Gate Threshold Voltage VDS=VGS, IDS=-250μA Gate-Source Leakage Current VGS=±20V,VDS=0V - - VGS=-10V,IDS=-20A - 4.8 6.0 VGS=-4.5V,IDS=-20A - 6.8 8.5 mΩ ISD=-20A,VGS=0V, TJ=25°C - -0.7 -1.0 V - 29 - ns - 54 - nC Drain-Source On-State Resistance ±100 nA Diode Characteristics VSD* Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge www.hymexa.com ISD=-20A,dISD/dt=100A/μs 2 V1.0 HY15P03C2 Electrical Characteristics (Cont.) (Tc =25°C Symbol Parameter Unless Otherwise Noted) Test Conditions HY15P03 Min Typ. Max Unit Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 3.2 - Ciss Input Capacitance VGS=0V, - 4287 - Coss Output Capacitance VDS=-25V, - 506 - Crss Reverse Transfer Capacitance Frequency=1.0MHz - 310 - td(ON) Turn-on Delay Time - 12 - Tr Turn-on Rise Time VDD=-15V,RG=2.5Ω, - 16 - td(OFF) Turn-off Delay Time IDS=-20A,VGS=-10V - 75 - - 37 - - 90 - - 7.5 - - 18 - Tf Turn-off Fall Time Gate Charge Ω pF ns Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS =-24V, VGS=-10V， ID=-20A nC Note: * Pulse test，pulse width ≤ 300us，duty cycle ≤ 2%. www.hymexa.com 3 V1.0 HY15P03C2 Typical Operating Characteristics -ID-Drain Current(A) Voltage Figure 2: Drain Current Power Dissipation (w) Figure 1: Power Dissipation Tc-Case Temperature(℃) Tc-Case Temperature(℃) Zθjc Impedance (℃/W) Thermal Normalized Transient Figure 4: Thermal Transient Impedance Voltage -ID-Drain Current(A) Figure 3: Safe Operation Area -VDS-Drain-Source Voltage(V) Maximum Effective Transient Thermal Impedance, Junction-to-Case -VDS-Drain-Source Voltage (V) www.hymexa.com m RDS(ON)-ON-Resistance(mΩ) Figure 6: Drain-Source On Resistance Voltage Voltage -ID-Drain Current(A) Figure 5: Output Characteristics -ID-Drain Current(A) 4 V1.0 HY15P03C2 Typical Operating Characteristics(Cont.) Voltage -IS-Source Current (A) Figure 8: Source-Drain Diode Forward Voltage Normalized On-Resistance(A) Figure 7: On-Resistance vs. Temperature Tj-Junction Temperature (℃) -VSD-Source-Drain Voltage(V) -VDS-Drain-Source Voltage (V) www.hymexa.com Voltage -VGS-Gate-Source Voltage (V) Figure 10: Gate Charge Characteristics Voltage C-Capacitance(pF) Figure 9: Capacitance Characteristics QG-Gate Charge (nC) 5 V1.0 HY15P03C2 Avalanche Test Circuit Switching Time Test Circuit Gate Charge Test Circuit www.hymexa.com 6 V1.0 HY15P03C2 Device Per Unit Package Type Unit Quantity PPAK5*6-8L Reel 5000 Package Information PPAK5*6-8L www.hymexa.com 7 V1.0 HY15P03C2 Classification Profile Classification Reflow Profiles Profile Feature Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmax to TP) Liquidous temperature (TL) Time at liquidous (tL) Peak package body Temperature (Tp)* Time (tP)** within 5°C of the specified classification temperature (Tc) Average ramp-down rate (Tp to Tsmax) Time 25°C to peak temperature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 150 °C 200 °C 60-120 seconds 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 217 °C 60-150 seconds 60-150 seconds See Classification Temp in table 1 See Classification Temp in table 2 20** seconds 30** seconds 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. *Tolerance for peak profile Temperature (T p) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. www.hymexa.com 8 V1.0 HY15P03C2 Table 1.SnPb Eutectic Process – Classification Temperatures (Tc) Package Volume mm³ Volume mm³ Thickness