LAD52C05L01

LAD52CXXL01 SERIES Electrostatic Discharged Protection Devices (ESD) Data Sheet Description The LAD52CXXL01 Series of Transient Voltage Suppressors (TVS) are designed to replace multilayer varistors (MLVs) in portable applications such as cell phones, notebook computer, and PDAs. They offer superior electrical characteristics such as lower clamping voltage and no device degradation when compared to MLVs. They are designed to protect sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD), lightning, electrical fast transients (EFT), and cable discharge events (CDE). Features ● ● ● ● ● ● ● ● ● ● ● IEC61000-4-2 ESD 15KV Air, 8KV contact compliance SOD523 surface mount package Working voltage: 3.3V，5V Low leakage current Low operating and clamping voltages Solid-state silicon avalanche technology Lead Free/RoHS compliant Solder reflow temperature: Pure Tin-Sn, 260~270℃ Flammability rating UL 94V-0 Meets MSL level 1, per J-STD-020 AEC-Q101 qualified 1 2 Pin Configuration Maximum Ratings Rating Symbol ESD voltage (Contact discharge) Value ±8 VESD ESD voltage (Air discharge) Storage & operating temperature range Unit kV ±15 TSTG ,TJ ℃ -55~+150 Electrical Characteristics (TJ=25℃) LAD52C03L01(Marking:A3) Parameter Reverse stand-off voltage Reverse breakdown voltage Symbol Condition Min. Typ. VRWM Max. Unit 3.3 V VBR IBR=1mA Reverse leakage current IR VR=3.3V 1 μA Clamping voltage (tp=8/20μs) VC IPP=1A 7 V Off state junction capacitance CJ 0Vdc,f=1MHz Revision:ESD-LAD52CXXL01 SERIES-001(A1) 1/4 4.0 V 10 pF http://brightking.pulseelectronics.com LAD52CXXL01 SERIES LAD52C05L01(Marking:A5) Parameter Symbol Reverse stand-off voltage Condition Min. Typ. VRWM Reverse breakdown voltage Max. Unit 5 V VBR IBR=1mA 5.6 V Reverse leakage current IR VR=5V 1 μA Clamping voltage (tp=8/20μs) VC IPP=1A 9.8 V Off state junction capacitance CJ 0Vdc,f=1MHz 12 pF Typical Characteristics Curves Figure 1. Pulse Waveforms tr 25 Peak value Ipp Waveform Parameters: tr=8µs td=20µs 90 80 Clamping Voltage (V) % of Peak Power Current 110 100 Figure 2. Clamping Voltage vs. Peak Pulse Current 70 60 50 40 30 td=t|IPP/2 20 20 15 10 Waveform Parameters: tr=8µs tb=20µs 5 10 0 0 0 5 10 15 20 25 30 t-Time (μs) 0 1 2 3 4 5 6 IPP-Peak Pulse Current (A) Figure 3. Capacitance vs. Reverse Voltage Figure 4. ESD Clamping(8kV Contact IEC61000-4-2) 20 F=1MHz Junction Capacitance (pF) 18 16 14 12 LAD52C05L01 10 8 LAD52C03L01 6 4 2 0 0 1 2 3 4 5 Reverse Voltage (V) Revision:ESD-LAD52CXXL01 SERIES-001(A1) 2/4 http://brightking.pulseelectronics.com LAD52CXXL01 SERIES Recommended Soldering Conditions Reflow Soldering Critical Zone TL to TP tP TP Ramp-up TL tL Temperature TS max TS min Ramp-down tS Preheat 25 t 25℃ to Peak Time Recommended Conditions Profile Feature Pb-Free Assembly Average ramp-up rate (TL to TP) 3℃/second max. Preheat -Temperature Min (TS min) -Temperature Max (TS max) -Time (min to max) (ts) 150℃ 200℃ 60-180 seconds TS max to TL -Ramp-up Rate 3℃/second max. Time maintained above: -Temperature (TL) -Time (tL) 217℃ 60-150 seconds Peak Temperature (TP) 260℃ Time within 5℃ of actual Peak Temperature (tP) Ramp-down Rate 6℃/second max. Time 25℃ to Peak Temperature Revision:ESD-LAD52CXXL01 SERIES-001(A1) 20-40 seconds 8 minutes max. 3/4 http://brightking.pulseelectronics.com LAD52CXXL01 SERIES Dimensions (SOD-523) Dimension (mm) Symbol Millimeters Min. Max. Min. Max. A 0.50 0.70 0.020 0.028 B 0.07 0.20 0.003 0.008 C 0.70 0.90 0.028 0.035 D 0.25 0.35 0.010 0.014 E 1.10 1.30 0.043 0.051 F 1.50 1.70 0.059 0.067 G 0.15 0.25 0.006 0.010 D C 0.55 (2X) 0.50 (2X) E F 0.80 1.90 A B Recommended Soldering Pad Layout G Inches Packaging Tape P0 P1 P2 K W B0 B F E øD0 A0 øD1 t A Symbol Dimension (mm) W 8.00±0.30 P0 4.00±0.10 P1 2.00±0.10 P2 2.00±0.10 D0 Φ1.55±0.10 D1 Φ0.50±0.05 E 1.75±0.10 F 3.50±0.10 A 1.00±0.10 A0 0.50±0.10 B 1.80±0.10 B0 1.30±0.10 K 0.65±0.10 t 0.20±0.05 D Φ178.0±2.0 D2 Φ13.0 W1 9.5 Reel D2 D Revision:ESD-LAD52CXXL01 SERIES-001(A1) W1 Quantity: 3000PCS 4/4 http://brightking.pulseelectronics.com