BT150S-600R,118

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Thank you for your cooperation and understanding, WeEn Semiconductors BT150S-600R SCR 1 November 2016 Product data sheet 1. General description Planar passivated SCR with sensitive gate in a TO252 (DPAK) surface mountable plastic package. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 2. Features and benefits • • • • Sensitive gate Planar passivated for voltage ruggedness and reliability Direct triggering from low power drivers and logic ICs Surface mountable package 3. Applications • • General purpose switching Protection Circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDRM repetitive peak offstate voltage VRRM repetitive peak reverse voltage IT(AV) average on-state current IT(RMS) RMS on-state current ITSM Tj Conditions Min Typ Max Unit - - 600 V - - 600 V half sine wave; Tmb ≤ 111 °C; Fig. 1 - - 2.5 A half sine wave; Tmb ≤ 111 °C; Fig. 2; Fig. 3 - - 4 A non-repetitive peak on- half sine wave; Tj(init) = 25 °C; tp = 10 ms; Fig. 4; Fig. 5 state current - - 35 A half sine wave; Tj(init) = 25 °C; tp = 8.3 ms - - 38 A - - 125 °C VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7 - 15 200 µA VDM = 402 V; Tj = 125 °C; RGK = 100 Ω; (VDM = 67% of VDRM); exponential waveform; Fig. 12 - 50 - V/µs [1] junction temperature [2] Static characteristics IGT gate trigger current Dynamic characteristics dVD/dt rate of rise of off-state voltage BT150S-600R WeEn Semiconductors SCR [1] [2] Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/μs. Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 K cathode 2 A anode[1] 3 G gate mb A mounting base; connected to anode Graphic symbol mb A K G sym037 2 1 3 DPAK (TO252N) [1] It is not possible to connect to pin 2 of the TO252 package. 6. Ordering information Table 3. Ordering information Type number BT150S-600R Package Name Description Version DPAK plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) TO252N 7. Marking Table 4. Marking codes Type number Marking code BYV10ED-600P BYV10ED-600P BT150S-600R Product data sheet All information provided in this document is subject to legal disclaimers. 1 November 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 2 / 12 BT150S-600R WeEn Semiconductors SCR 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDRM repetitive peak off-state voltage VRRM Min Max Unit - 600 V repetitive peak reverse voltage - 600 V IT(AV) average on-state current half sine wave; Tmb ≤ 111 °C; Fig. 1 - 2.5 A IT(RMS) RMS on-state current half sine wave; Tmb ≤ 111 °C; Fig. 2; Fig. 3 - 4 A ITSM non-repetitive peak onstate current half sine wave; Tj(init) = 25 °C; tp = 10 ms; Fig. 4; Fig. 5 - 35 A half sine wave; Tj(init) = 25 °C; tp = 8.3 ms - 38 A 2 2 Conditions [1] I t I t for fusing tp = 10 ms; SIN - 6.1 A²s dIT/dt rate of rise of on-state current IT = 10 A; IG = 50 mA; dIG/dt = 50 mA/µs - 50 A/µs IGM peak gate current - 2 A VRGM peak reverse gate voltage - 5 V PGM peak gate power - 5 W PG(AV) average gate power - 0.5 W Tstg storage temperature -40 150 °C Tj junction temperature - 125 °C [1] [2] over any 20 ms period [2] Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/μs. Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less. BT150S-600R Product data sheet All information provided in this document is subject to legal disclaimers. 1 November 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 3 / 12 BT150S-600R WeEn Semiconductors SCR aaa-011899 5 a = 1.57 Ptot (W) 1.9 4 2.2 2.8 3 4 2 conduction angle (degrees) form factor a 30 60 90 120 180 4 2.8 2.2 1.9 1.57 1 0 0 0.5 1 1.5 2 α 2.5 lT(AV) (A) 3 α = conduction angle a = form factor = IT(RMS) / IT(AV) Fig. 1. Total power dissipation as a function of average on-state current; maximum values aaa-011910 5 lT(RMS) (A) 111 °C 4 aaa-012052 12 IT(RMS) (A) 10 8 3 6 2 4 1 0 -50 2 0 50 100 Tmb (°C) 0 10-2 150 Fig. 2. RMS on-state current as a function of mounting base temperature; maximum values BT150S-600R Product data sheet 10-1 1 10 surge duration (s) f = 50 Hz; Tmb = 111 °C Fig. 3. RMS on-state current as a function of surge duration; maximum values All information provided in this document is subject to legal disclaimers. 1 November 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 4 / 12 BT150S-600R WeEn Semiconductors SCR aaa-011897 40 lTSM (A) 30 20 IT ITSM 10 tp 0 t Tj(init) = 25 °C max 1 102 10 103 number of cycles f = 50 Hz Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values aaa-011898 103 IT lTSM (A) ITSM tp t Tj(init) = 25 °C max (1) 102 10 10-5 10-4 10-3 tp (s) 10-2 tp ≤ 10 ms (1) dIT/dt limit Fig. 5. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values BT150S-600R Product data sheet All information provided in this document is subject to legal disclaimers. 1 November 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 5 / 12 BT150S-600R WeEn Semiconductors SCR 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base Fig. 6 - - 3 K/W Rth(j-a) thermal resistance from junction to ambient free air Device mounted on an FR4 PrintedCircuit Board (PCB), single-sided copper, tin-plated and standard footprint - 75 - K/W aaa-011909 10 Zth(j-mb) (K/W) 1 10-1 P tp 10-2 10-5 10-4 10-3 10-2 10-1 1 tp (s) t 10 Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse width BT150S-600R Product data sheet All information provided in this document is subject to legal disclaimers. 1 November 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 6 / 12 BT150S-600R WeEn Semiconductors SCR 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics IGT gate trigger current VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7 - 15 200 µA IL latching current VD = 12 V; IG = 0.1 A; Tj = 25 °C; Fig. 8 - 0.17 10 mA IH holding current VD = 12 V; Tj = 25 °C; Fig. 9 - 0.1 6 mA VT on-state voltage IT = 5 A; Tj = 25 °C; Fig. 10 - 1.23 1.8 V VGT gate trigger voltage VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 11 - 0.4 1 V VD = 600 V; IT = 0.1 A; Tj = 110 °C; Fig. 11 0.1 0.2 - V ID off-state current VD = 600 V; Tj = 125 °C - 0.1 0.5 mA IR reverse current VR = 600 V; Tj = 125 °C - 0.1 0.5 mA VDM = 402 V; Tj = 125 °C; RGK = 100 Ω; (VDM = 67% of VDRM); exponential waveform; Fig. 12 - 50 - V/µs Dynamic characteristics dVD/dt rate of rise of off-state voltage tgt gate-controlled turn-on ITM = 10 A; VD = 600 V; IG = 5 mA; dIG/ time dt = 0.2 A/µs; Tj = 25 °C - 2 - µs tq commutated turn-off time - 100 - µs VDM = 402 V; Tj = 125 °C; ITM = 8 A; VR = 10 V; (dIT/dt)M = 10 A/µs; dVD/ dt = 2 V/µs; RGK(ext) = 1 kΩ; (VDM = 67% of VDRM) aaa-011902 3 IGT IL IGT(25°C) IL(25°C) 2 2 1 1 0 -50 0 50 100 Tj (°C) 0 -50 150 Fig. 7. Normalized gate trigger current as a function of junction temperature BT150S-600R Product data sheet aaa-011903 3 0 50 100 Tj (°C) 150 RGK = 1 kΩ Fig. 8. Normalized latching current as a function of junction temperature All information provided in this document is subject to legal disclaimers. 1 November 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 7 / 12 BT150S-600R WeEn Semiconductors SCR aaa-011904 3 aaa-011906 12 IH IT (A) IH(25°C) 2 8 1 4 (1) 0 -50 0 50 100 Tj (°C) 0 150 RGK = 1 kΩ 0 (2) (3) 1 2 VT (V) 3 Vo = 1.26 V; Rs = 0.099 Ω (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj = 25 °C; maximum values Fig. 9. Normalized holding current as a function of junction temperature Fig. 10. On-state current as a function of on-state voltage aaa-011905 1.6 aaa-011907 103 VGT VGT(25°C) dVD/dt (V/µs) 1.2 (1) 102 0.8 10 0.4 0 -50 0 50 100 Tj (°C) 1 150 Fig. 11. Normalized gate trigger voltage as a function of junction temperature BT150S-600R Product data sheet 0 50 100 Tj (°C) 150 (1) RGK = 100 Ω Fig. 12. Critical rate of rise of off-state voltage as a function of junction temperature; typical values All information provided in this document is subject to legal disclaimers. 1 November 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 8 / 12 BT150S-600R WeEn Semiconductors SCR 11. Package outline Fig. 13. Package outline DPAK (TO252N) BT150S-600R Product data sheet All information provided in this document is subject to legal disclaimers. 1 November 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 9 / 12 BT150S-600R WeEn Semiconductors SCR Right to make changes — WeEn Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 12. Legal information Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local WeEn Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between WeEn Semiconductors and its customer, unless WeEn Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the WeEn Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 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Notwithstanding any damages that customer might incur for any reason whatsoever, WeEn Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of WeEn Semiconductors. Product data sheet Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. WeEn Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ween-semi.com. BT150S-600R Suitability for use — WeEn Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an WeEn Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. WeEn Semiconductors and its suppliers accept no liability for inclusion and/or use of WeEn Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Customers are responsible for the design and operation of their applications and products using WeEn Semiconductors products, and WeEn Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the WeEn Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. WeEn Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using WeEn Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). WeEn does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific WeEn Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. WeEn Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without WeEn Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond WeEn Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies WeEn Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond WeEn Semiconductors’ standard warranty and WeEn Semiconductors’ product specifications. All information provided in this document is subject to legal disclaimers. 1 November 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 10 / 12 BT150S-600R WeEn Semiconductors SCR Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. BT150S-600R Product data sheet All information provided in this document is subject to legal disclaimers. 1 November 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 11 / 12 BT150S-600R WeEn Semiconductors SCR 13. Contents 1. General description......................................................1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 3 9. Thermal characteristics............................................... 6 10. Characteristics............................................................ 7 11. Package outline.......................................................... 9 12. Legal information..................................................... 10 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved For more information, please visit: http://www.ween-semi.com For sales office addresses, please send an email to: salesaddresses@ween-semi.com Date of release: 1 November 2016 BT150S-600R Product data sheet All information provided in this document is subject to legal disclaimers. 1 November 2016 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved 12 / 12