WS72542
WS72542
Low-Power Rail-to-Rail
Operational Amplifiers
Input
Output
Http//:www.willsemi.com
Descriptions
The WS72542 series is a dual low-voltage operational
amplifier with rail-to-rail input/output swing. Ultra low
quiescent current makes this amplifier ideal for
SOP-8L
MSOP-8L
portable, battery operated equipment. The common
mode input range includes ground making the device
useful for low−side current−shunt measurements.
OUTA
1
-INA
2
The WS72542 is available with MSL 3 Level in SOP-8L
+INA
3
package and MSOP-8L package. Standard products
V-
4
A
B
8
V+
7
OUTB
6
-INB
5
+INB
are Pb-Free and halogen-Free.
SOP-8L/MSOP-8L
Applications
Pin configuration (Top view)
Active Filters
Smoke/Gas Sensors
Battery Powered Electronic Equipments
Personal Medical Care
Features
Single Supply Voltage
Quiescent
Current
: 1.8~5.5V
per
SOP-8L
: 42A Typical
MSOP-8L
Amplifier
GBWP
Slew Rate
: 1.4V/s
Offset Voltage
: 2mV Maximum
: 2MHz
Marking
2542
= Device code
GS
= Special code
GM
= Special code
Offset Voltage Temp. Drift
: 1.1V / C
THD+N
:-102dB@1kHz,
Y
= Year code
-86dB@10kHz
W
= Week code
°
CMRR/PSRR
: 110dB/106dB
Output Short-Circuit Curr.
: 46mA
°
Order Information
°
-40 C to 125 C Operation Range
Drives 2kΩ Resistive Loads
No Output Crossover Distortion
No Phase Reversal from Overdriven Input
Rail-to-Rail Input/Output Swing
Will Semiconductor Ltd.
1
Device
Package
Shipping
WS72542S-8/TR
SOP-8L
4000/Reel &Tape
WS72542M-8/TR
MSOP-8L
4000/Reel &Tape
Jun, 2019 - Rev. 1.0
WS72542
Pin Descriptions
Pin Number
Symbol
Descriptions
1
OUTA
2
-INA
Inverting input
3
+INA
Non-inverting input
4
V-
5
+INB
Non-inverting input
6
-INB
Inverting input
7
OUTB
8
V+
Output
Negative supply
Output
Positive supply
Absolute Maximum Ratings
Parameter
Supply Voltage, ([V+] – [V-])
Input Differential Voltage
Symbol
Value
Unit
(2)
VS
(3)
VIDR
6
V
6
-
V
+
Input Common Mode Voltage Range
VICR
(V )-0.2 to (V )+0.2
Output Short-Circuit Duration
tSO
Unlimited
/
-40 to 125
°
-65 to 150
°
150
°
260
°
Operating Fee-Air Temperature Range
TA
Storage Temperature Range
TSTG
Junction Temperature Range
TJ
Lead Temperature Range
TL
V
C
C
C
C
Note:
1.
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the
device. These are only stress ratings, and functional operation of the device at these or any other
conditions beyond those indicated under recommended operating conditions are not implied. Exposure
to absolute-maximum-rated conditions for extended periods may affect device reliability.
2.
All voltage values, except differential voltage are with respect to network terminal.
3.
Differential voltages are at +IN with respect to -IN.
ESD, Electrostatic Discharge Protection
Symbol
HBM
Parameter
Human Body Model ESD
Condition
MIL-STD-883H Method 3015.8
Minimum level
Unit
±8000
V
JEDEC-EIA/JESD22-A114A
MM
CDM
Machine Model ESD
JEDEC-EIA/JESD22-A115
±350
V
Charged Device Model ESD
JEDEC-EIA/JESD22-C101E
±2000
V
Will Semiconductor Ltd.
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Jun, 2019 - Rev. 1.0
WS72542
Electronics Characteristics
The *denotes the specifications which apply over the full operating temperature range, otherwise
specifications are at TA = 25°C. VS = 5V, VCM = VOUT = VS/2, Rload = 100kΩ, Cload =100pF.
Symbol
Parameter
Conditions
VCM= VS/2
Min.
Typ.
Max.
Unit
-2.0
0.1
2.0
mV
VOS
Input Offset Voltage
VOS
Input Offset Voltage Drift
1.1
μV/°C
IIB
Input Bias Current
10
pA
IOS
Input Offset Current
10
pA
Vn
Input Voltage Noise
f=0.1Hz to10Hz
5.2
VP-P
f=10Hz to 20kHz
4.6
Vrms
en
Input Voltage Noise Density
f=1kHz
30
f=10kHz
23
CMRR
Common Mode Rejection Ratio
VCM=0.1V to 4.9V
*
*
85
-
nV/√Hz
110
dB
+
VCM
Common Mode Input Voltage Range
*
(V )-0.2
PSRR
Power Supply Rejection Ratio
*
90
106
dB
AVOL
Open Loop Large Signal Gain
*
100
109
dB
VOH
High Level Output Voltage
VOL
Low Level Output Voltage
ISC
Output Short-Circuit Current
IQ
Quiescent Current per Amplifier
PM
Phase Margin
GM
Gain Margin
GBWP
Gain-Bandwidth Product
Settling
tS
Time
VOUT=0.1V to 4.9V,
Rload=10k
Rload=2k
50
Rload=10k
5
Rload=2k
50
Rload=10k
5
Sink/Source
*
Rload=100k,
Cload=100pF
Cload=100pF
2.45 to 2.55V, Unity
Gain
f=1kHz
V
mV
mV
46
Current
Rload=100k,
1.5 to 3.5V, Unity Gain
(V )+0.2
42
mA
A
60
65
degrees
-15
dB
2
MHz
0.1%
1.9
0.1%
0.29
s
AV=1, VOUT=1.5V to
SR
Slew Rate
3.5V, Rload=100k,
1.4
V/s
240
kHz
Cload=100pF
FPBW
Full Power Bandwidth
2VP-P
f=1kHz, AV=1,
Rload=100k,
THD+N
Total Harmonic Distortion and Noise
-102
VOUT=2VPP
dB
f=10kHz, AV=1,
Rload=100k,
-86
VOUT=2VPP
Will Semiconductor Ltd.
3
Jun, 2019 - Rev. 1.0
WS72542
Note:
1.
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the
device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device
reliability and lifetime.
2.
A heat sink may be required to keep the junction temperature below the absolute maximum rating when
the output is shorted indefinitely.
3.
Thermal resistance varies with the amount of PC board metal connected to the package. The specified
values are for short traces connected to the leads.
4.
Full power bandwidth is calculated from the slew rate FPBW = SR/(π • VP-P).
Will Semiconductor Ltd.
4
Jun, 2019 - Rev. 1.0
WS72542
Typical Characteristics
TA=25°C, VS=±2.5V, VCM=0V, unless otherwise noted
Small-Siganl Step Response, 100mV Step
Large-Siganl Step Response, 2V Step
VIN=-0.2V to 5.7V, No Phase Reversal
0.1Hz to 10Hz Integrated Input Noise,
Gain = 50000
Over Shoot Voltage, Cload=47nF,
Over Shoot Voltage, Cload=47nF,
RFB=10kΩ, Gain=+1
Rload=40kΩ, Gain=-1
Will Semiconductor Ltd.
5
Jun, 2019 - Rev. 1.0
WS72542
Typical Characteristics (continued)
TA=25°C, VS=±2.5V, VCM=0V, unless otherwise noted
Open-Loop Gain and Phase
180
80
Cload=100pF
Rload=100k
Gain
Phase
150
120
Gain=+1
Rload=100k
70
Phase Margin()
Gain and Phase
Phase Margin vs. Cload (Stable for Any Cload)
90
60
30
0
-30
60
50
40
30
20
10
-60
100
1k
10k
100k
0
10
1M
100
Input Offset Voltage vs. Temperature
CMRR(dB)
Input Offset Voltage(mV)
0.5
0.4
0.3
0.2
-25
0
25
50
75
100 125 150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
10
100
100k
Gain=-1, RFB=20kΩ
Gain=+1
60
Gain=-1
Over shoot
Under shoot
30
20
10
100
10k
Over-Shoot % vs. Cload
40
0
1k
Over-Shoot % vs. Cload
over shoot and Under shoot(%)
over shoot and Under shoot(%)
50
100k
1k
10k
100k
1M
Gain=+1
Over shoot
Under shoot
50
40
30
20
10
0
1M
100
1k
10k
100k
1M
Load Capacitance(pF)
Load Capacitance(pF)
Will Semiconductor Ltd.
1M
Frequency(Hz)
Temperature(C)
60
10k
CMRR vs. Frequency
0.6
0.1
-50
1k
Load Capacitance(pF)
Frequency(Hz)
6
Jun, 2019 - Rev. 1.0
WS72542
Typical Characteristics (continued)
TA=25°C, VS=±2.5V, VCM=0V, unless otherwise noted
PSRR vs. Frequency
Closed-Loop Output Impedance vs. Frequency
Close-loop Output lmpedance()
110
100
90
PSRR(dB)
80
70
60
50
40
30
20
10
0
10
100
1k
10k
100k
1M
80
70
60
50
40
30
20
10
0
1k
10k
Frequency(Hz)
50
48
48
46
44
42
-25
0
25
50
75
46
44
42
40
2.0
100 125 150
2.5
Temperature(C)
3.5
4.0
4.5
5.0
5.5
6.0
Input Offset Voltage Distribution
30
Production
Packaged
Units
2,700
Samples
25
Percentage(%)
Ishort(mA)
3.0
Supply Voltage(V)
Short-Circuit Current vs. Supply Voltage
60
55
50
45
40
35
30
25
20
15
10
5
0
2.0
1M
Quiescent Supply Current vs. Supply Voltage
50
Quiescent Current(uA)
Quiescent Current(uA)
Quiescent Supply Current vs. Temperature
40
-50
100k
Frequency(Hz)
20
15
10
5
2.5
3.0
3.5
4.0
4.5
5.0
5.5
0
6.0
-2
Supply Voltage(V)
Will Semiconductor Ltd.
7
-1
0
1
Input Offset Voltage(mV)
2
Jun, 2019 - Rev. 1.0
WS72542
Typical Characteristics (continued)
TA=25°C, VS=±2.5V, VCM=0V, unless otherwise noted
THD+Noise vs. Frequency
Rload=100k
Cload=100pF
VIN+=2VPP
Gain=+1
-80
Rload=100k
Cload=100pF
f=1KHz
Gain=+1
-60
-70
THD+N(dB)
-85
THD+N(dB)
THD+Noise vs. VIN+
-50
-90
-95
-80
-90
-100
-110
-100
-120
-105
10
100
1k
-130
10k
Frequency(Hz)
1
2
3
4
VIN+(Vpp)
Crosstalk
-80
-82
Crosstalk(dB)
-84
-86
-88
-90
-92
-94
-96
-98
-100
10
100
1k
10k
Frequency(Hz)
Will Semiconductor Ltd.
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Jun, 2019 - Rev. 1.0
WS72542
PACKAGE OUTLINE DIMENSIONS
SOP-8L
D
E
E1
L
c
θ
e
SIDE VIEW
A1
TOP VIEW
A
A2
b
SIDE VIEW
Dimensions In Millimeters (mm)
Symbol
Min.
Typ.
Max.
A
1.35
1.55
1.75
A1
0.05
0.15
0.25
A2
1.25
1.40
1.65
b
0.33
-
0.51
c
0.15
-
0.26
D
4.70
4.90
5.10
E
3.70
3.90
4.10
E1
5.80
6.00
6.20
e
1.27BSC
L
0.40
-
1.27
θ
0°
-
8°
Will Semiconductor Ltd.
9
Jun, 2019 - Rev. 1.0
WS72542
TAPE AND REEL INFORMATION
Reel Dimensions
RD
Reel Dimensions
Tape Dimensions
W
P1
Quadrant Assignments For PIN1 Orientation In Tape
Q1
Q2
Q1
Q2
Q3
Q4
Q3
Q4
User Direction of Feed
RD
Reel Dimension
7inch
13inch
W
Overall width of the carrier tape
8mm
12mm
P1
Pitch between successive cavity centers
2mm
4mm
8mm
Pin1
Pin1 Quadrant
Q1
Q2
Q3
Will Semiconductor Ltd.
10
Q4
Jun, 2019 - Rev. 1.0
WS72542
PACKAGE OUTLINE DIMENSIONS
MSOP-8L
D
e
c
E
E1
L
b
θ
TOP VIEW
A
A2
A1
SIDE VIEW
SIDE VIEW
Symbol
Dimensions In Millimeters (mm)
Min.
Typ.
Max.
A
-
-
1.10
A1
0.02
-
0.15
A2
0.75
0.80
0.95
b
0.25
-
0.38
c
0.09
-
0.23
D
2.90
3.00
3.10
E
4.75
4.90
5.05
E1
2.90
3.00
3.10
e
0.65 BSC
L
0.40
-
0.80
θ
0°
-
6°
Will Semiconductor Ltd.
11
Jun, 2019 - Rev. 1.0
WS72542
TAPE AND REEL INFORMATION
Reel Dimensions
RD
Reel Dimensions
Tape Dimensions
W
P1
Quadrant Assignments For PIN1 Orientation In Tape
Q1
Q2
Q1
Q2
Q3
Q4
Q3
Q4
User Direction of Feed
RD
Reel Dimension
7inch
13inch
W
Overall width of the carrier tape
8mm
12mm
P1
Pitch between successive cavity centers
2mm
4mm
8mm
Pin1
Pin1 Quadrant
Q1
Q2
Q3
Will Semiconductor Ltd.
12
Q4
Jun, 2019 - Rev. 1.0