FM24C02C
2-Wire Serial EEPROM
Data Sheet
Jul. 2014
Data Sheet
FM24C02C 2-wrie Serial EEPROM
Ver1.6
1
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Trademarks
Shanghai Fudan Microelectronics Group Co., Ltd name and logo, the “复旦” logo are trademarks or registered trademarks of
Shanghai Fudan Microelectronics Group Co., Ltd or its subsidiaries in China.
Shanghai Fudan Microelectronics Group Co., Ltd, Printed in the China, All Rights Reserved.
Data Sheet
FM24C02C 2-wrie Serial EEPROM
Ver1.6
2
Description
Packaging Type
The FM24C02C provides low operation voltage of 2048 bits
of serial electrically erasable and programmable read-only
memory (EEPROM) organized as 256 words of 8 bits each.
The device is optimized for use in many industrial and
commercial applications where low-power and low-voltage
operations are essential.
Features
z
z
z
z
z
z
z
z
z
z
z
z
Low Operation Voltage: VCC = 1.7V to 5.5V
Internally Organized: 256 x 8
Two-wire Serial Interface
Schmitt Trigger, Filtered Inputs for Noise
Suppression
Bi-directional Data Transfer Protocol
400KHz (2.5V~5.5V) and 100 kHz (1.7V)
Compatibility
Write Protect Pin for Hardware Data Protection
8-byte Page Write Modes
Partial Page Writes are Allowed
Self-timed Write Cycle (5 ms max)
High-reliability
– Endurance: 1,000,000 Write Cycles
– Data Retention: 100 Years
PDIP8, SOP8, TSSOP8 , TDFN8 and TSOT23-5L
Packages (RoHS Compliant and Halogen-free)
Absolute Maximum Ratings
Operating Temperature
(Plastic Package)
Operating Temperature
(Module Package)
Storage Temperature
(Plastic Package)
Storage Temperature
(Module Package)
Voltage on Any Pin with Respect to
Ground
Maximum Operating Voltage
DC Output Current
-55°C to +125°C
-20°C to +60°C
-65°C to +150°C
-25°C to +70°C
Pin Configurations
-1.0V to +7.0V
6.25V
5.0 mA
*NOTICE: Stresses beyond those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or
any other conditions beyond those indicated in the operational
sections of this specification are not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device
reliability.
Pin Name
Function
A0～A2
SDA
SCL
WP
VCC
GND
Not Connect
Serial Data Input/Output
Serial Clock Input
Write Protect
Power Supply
Ground
Data Sheet
FM24C02C 2-wrie Serial EEPROM
Ver1.6
3
Figure 1．Block Diagram
Data Sheet
FM24C02C 2-wrie Serial EEPROM
Ver1.6
4
Pin Description
SERIAL CLOCK (SCL): The SCL input is used to
positive edge clock data into each EEPROM device
and negative edge clock data out of each device.
SERIAL DATA (SDA): The SDA pin is bi-directional
for serial data transfer. This pin is open-drain driven
and may be wire-ORed with any number of other
open-drain or open-collector devices.
DEVICE/PAGE ADDRESSES (A2, A1, A0): The A2,
A1 and A0 pins are no connects. A total of one
device may be addressed on a single bus system.
WRITE PROTECT (WP): The FM24C02C has a Write
Protect pin that provides hardware data protection.
The Write Protect pin allows normal read/write
operations when connected to ground (GND).
When the Write Protect pin is connected to VCC, the
write protection feature is enabled.
Write Protect Description
WP Pin
Status
Part of the Array Protected
WP=VCC
Full (2K) Array
WP=GND
Normal Read/Write Operations
Memory Organization
FM24C02C, 2K SERIAL EEPROM: Internally organized with 32 pages of 8 bytes each, the 2K requires a 8-bit
data word address for random word addressing.
Data Sheet
FM24C02C 2-wrie Serial EEPROM
Ver1.6
5
Pin Capacitance
SYMBOL
CIN(1)
COUT(1)
PARAMETER
Input Capacitance
Output Capacitance
CONDITIONS
Max
Units
VIN = 0V, f = 1MHz
VOUT = 0V, f = 1MHz
6
8
pF
pF
Note: 1. This parameter is characterized and is not 100% tested.
DC Characteristics
Applicable over recommended operating range from: TA = -40°C ~ +85°C（Plastic Package）/ TA = -20°C ~
+60°C（Module Package），(unless otherwise noted).
Symbol
Parameter
VCC
ICC1
ICC2
ISB1
ISB2
ILI
ILO
VIL1
VIH1
VOL2
VOL1
Supply Voltage
Supply Current
Supply Current
Standby Current
Standby Current
Input Leakage Current
Output Leakage Current
Input Low Level
Input High Level
Output Low Level
Output Low Level
Test Condition
Min
Typ
1.7
VCC = 5.0V, Read at 400K
VCC = 5.0V, Write at 400K
VCC = 1.7V, VIN = VCC/ VSS
VCC = 5.5V, VIN = VCC/ VSS
VIN = VCC/VSS
VOUT = VCC/ VSS
0.4
2.0
3.0
8.0
0.1
0.05
-0.6
VCC x 0.7
VCC = 3.0V, IOL = 2.1 mA
VCC = 1.7V, IOL = 0.15 mA
Max
Units
5.5
1.0
3.0
6.0
18.0
3.0
3.0
VCC x 0.3
VCC + 0.5
0.4
0.2
V
mA
mA
µA
µA
µA
µA
V
V
V
V
Note: 1. VIL min and VIH max are reference only and are not tested.
Data Sheet
FM24C02C 2-wrie Serial EEPROM
Ver1.6
6
AC Characteristics
Applicable over recommended operating range from: TA = -40°C ~ +85°C（Plastic Package）/ TA = -20°C ~
+60°C（Module Package）, VCC = +1.7V to +5.5V, CL = 100 pF (unless otherwise noted). Test conditions
are listed in Note 2.
Symbol
Parameter
fSCL
tLOW
tHIGH
tAA
Clock Frequency, SCL
Clock Pulse Width Low
Clock Pulse Width High
Clock Low to Data Out Valid
Time the bus must be free before
a new transmission can Start
Start Hold Time
Start Setup Time
Data In Hold Time
Data In Setup Time
Inputs Rise Time
Inputs Fall Time
Stop Setup Time
Data Out Hold Time
Write Cycle Time
tBUF1
tHD.STA
tSU.STA
tHD.DAT
tSU.DAT
tR
tF
tSU.STO
tDH
tWR
1.7-volt
Min
Max
2.5-volt
Min
Max
5.5-volt
Min
Max
100
400
400
4.7
4.0
0.2
3.45
1.3
0.6
0.1
0.9
1.3
0.6
0.1
0.9
Units
kHz
µs
µs
µs
4.7
1.3
1.3
µs
4.0
4.7
0
250
0.6
0.6
0
100
0.6
0.6
0
100
µs
µs
µs
ns
µs
µs
µs
ns
ms
Write
Cycles
1.0
0.3
4.0
200
0.3
0.3
0.6
100
5.0
Endurance 1 3.3V, 25°C, Page Mode
0.3
0.3
0.6
100
5.0
1,000,000
5.0
Notes: 1. This parameter is characterized and is not 100% tested.
2. AC measurement conditions:
RL (connects to VCC): 1.3 kΩ
Input pulse voltages: 0.3 VCC to 0.7 VCC
Input rise and fall times: ≤ 50 ns
Input and output timing reference voltages: 0.5 VCC
Data Sheet
FM24C02C 2-wrie Serial EEPROM
Ver1.6
7
Device Operation
CLOCK and DATA TRANSITIONS: The SDA pin is
normally pulled high with an external device. Data on
the SDA pin may change only during SCL low time
periods (refer to Figure 4). Data changes during
SCL high periods will indicate a start or stop
condition as defined below.
START CONDITION: A high-to-low transition of SDA
with SCL high is a start condition which must
precede any other command (refer to Figure 5).
STOP CONDITION: A low-to-high transition of SDA
with SCL high is a stop condition. After a read
sequence, the stop command will place the EEPROM
in a standby power mode (refer to Figure 5).
ACKNOWLEDGE: All addresses and data words are
serially transmitted to and from the EEPROM in 8-bit
words. The EEPROM sends a zero to acknowledge
that it has received each word. This happens
during the ninth clock cycle. Following receipt each
word from the EEPROM, the microcontroller should
send a zero to EEPROM and continue to output the
next data word or send a stop condition to finish the
read cycle.
STANDBY MODE: The FM24C02C features a
low-power standby mode which is enabled: (a) upon
power-up and (b) after the receipt of the stop bit and
the completion of any internal operations.
DEVICE RESET: After an interruption in protocol,
power loss or system reset, any two-wire part can
be reset in following these steps:
1. Clock up to 9 Cycles,
2. Look for SDA high in each cycle while SCL is
high and then,
3. Create a start condition as SDA is high.
Bus Timing
Figure 2．SCL: Serial Clock, SDA: Serial Data I/O
tHIGH
tF
tLOW
SCL
tSU.STA
tHD.STA
tR
tLOW
tHD.DAT
tSU.DAT
tSU.STO
SDA
IN
tAA
tDH
tBUF
SDA
OUT
Data Sheet
FM24C02C 2-wrie Serial EEPROM
Ver1.6
8
Write Cycle Timing
Figure 3．SCL: Serial Clock, SDA: Serial Data I/O
Note: 1. The write cycle time tWR is the time from a valid stop condition of a write sequence to the end of the
internal clear/write cycle.
Figure 4．Data Validity
Figure 5．Start and Stop Definition
SDA
SCL
START
STOP
Data Sheet
FM24C02C 2-wrie Serial EEPROM
Ver1.6
9
Figure 6．Output Acknowledge
Device Addressing
The FM24C02C device requires an 8-bit device
address word following a start condition to enable
the chip for a read or write operation (refer to
Figure 7).
The eighth bit of the device address is the read/write
operation select bit. A read operation is initiated if
this bit is high and a write operation is initiated if
this bit is low.
The device address word consists of a mandatory
one, zero, one, zero, zero, zero, zero sequence for
the first seven most significant bits as shown.
Upon a compare of the device address, the EEPROM
will output a zero.
Data Sheet
FM24C02C 2-wrie Serial EEPROM
Ver1.6
10
Write Operations
Read Operations
BYTE WRITE: A write operation requires an 8-bit
data word address following the device address
word and acknowledgment. Upon receipt of this
address, the EEPROM will again respond with a
zero and then clock in the first 8-bit data word.
Following receipt of the 8-bit data word, the
EEPROM will output a zero and the addressing
device, such as a microcontroller, must terminate
the write sequence with a stop condition. At this
time the EEPROM enters an internally timed write
cycle, tWR, to the nonvolatile memory. All inputs are
disabled during this write cycle and the EEPROM
will not respond until the write is complete (refer to
Figure 8).
Read operations are initiated the same way as write
operations with the exception that the read/write
select bit in the device address word is set to one.
There are three read operations: current address
read, random address read and sequential read.
PAGE WRITE: The 2K devices are capable of
8-byte page writes.
A page write is initiated the same as a byte write,
but the microcontroller does not send a stop
condition after the first data word is clocked in.
Instead, after the EEPROM acknowledges receipt
of the first data word, the microcontroller can
transmit up to seven more data words. The
EEPROM will respond with a zero after each data
word received. The microcontroller must terminate the
page write sequence with a stop condition (refer to
Figure 9).
The data word address lower three bits are internally
incremented following the receipt of each data word.
The higher data word address bits are not
incremented, retaining the memory page row
location. When the word address, internally
generated, reaches the page boundary, the
following byte is placed at the beginning of the
same page. If more than eight data words are
transmitted to the EEPROM, the data word address
will “roll over” and previous data will be overwritten.
ACKNOWLEDGE POLLING: Once the internally
timed write cycle has started and the EEPROM
inputs are disabled, acknowledge polling can be
initiated. This involves sending a start condition
followed by the device address word. The
read/write bit is representative of the operation
desired. Only if the internal write cycle has
completed will the EEPROM respond with a zero
allowing the read or write sequence to continue.
CURRENT ADDRESS READ: The internal data
word address counter maintains the last address
accessed during the last read or write operation,
incremented by one. This address stays valid
between operations as long as the chip power is
maintained. The address “roll over” during read is
from the last byte of the last memory page to the
first byte of the first page. The address “roll over”
during write is from the last byte of the current
page to the first byte of the same page.
Once the device address with the read/write select
bit set to one is clocked in and acknowledged by
the EEPROM, the current address data word is
serially clocked out. The microcontroller does not
respond with an input zero but does generate a
following stop condition (refer to Figure 10).
RANDOM READ: A random read requires a “dummy”
byte write sequence to load in the data word
address. Once the device address word and data
word address are clocked in and acknowledged by
the EEPROM, the microcontroller must generate
another start condition. The microcontroller now
initiates a current address read by sending a
device address with the read/write select bit high.
The EEPROM acknowledges the device address
and serially clocks out the data word. The
microcontroller does not respond with a zero but
does generate a following stop condition (refer to
Figure 11).
SEQUENTIAL READ: Sequential reads are
initiated by either a current address read or a
random address read. After the microcontroller
receives a data word, it responds with an
acknowledge. As long as the EEPROM receives an
acknowledge, it will continue to increment the data
word address and serially clock out sequential data
words. When the memory address limit is reached,
the data word address will “roll over” and the
sequential read will continue. The sequential read
operation is terminated when the microcontroller
does not respond with a zero but does generate a
following stop condition (refer to Figure 12)
Data Sheet
FM24C02C 2-wrie Serial EEPROM
Ver1.6
11
Figure 7．Device Address
MSB
1
0
1
0
0
0
0
LSB
R/W
Figure 8．Byte Write
Figure 9．Page Write
Data Sheet
FM24C02C 2-wrie Serial EEPROM
Ver1.6
12
Figure 10．Current Address Read
Figure 11． Random Read
Figure 12． Sequential Read
Data Sheet
FM24C02C 2-wrie Serial EEPROM
Ver1.6
13
Ordering Information
FM 24C 02
C -PP -C -H
Company Prefix
FM = Shanghai Fudan Microelectronics Group Co.,ltd
Product Family
24C = 2-Wire Serial EEPROM
Product Density
02 = 2K-bit
Sub-Product Family
C = 1.7V to 5.5V
Package Type
(1)
PD = 8-pin PDIP
SO = 8-pin SOP
TS = 8-pin TSSOP
DN = 8-pin TDFN
ST = 5-pin TSOT23
M2F or M2P = 8-pin Module Package
M3F or M3P = 6-pin Module Package
Product Carrier
U = Tube
T = Tape and Reel
R = Module Reel
HSF ID Code
(2)
Blank or R = RoHS Compliant
G = RoHS Compliant, Halogen-free, Antimony-free
Note:
1. For SO, TS and DN package, MSL1 package are available, for detail please contact local sales
office. For the details of Module package please contact local sales office.
2. For PD package: R class offer only
For SO, TS, DN and ST package: G class offer only.
.
Data Sheet
FM24C02C 2-wrie Serial EEPROM
Ver1.6
14
Part Marking Scheme
PDIP8
SOP8
TSSOP8
FM24C02C
YYWWALHM
Product Density
Moisture Sensitivity Level
1=MSL1
Blank=MSL3
HSF ID Code
G = RoHS Compliant, Halogen-free, Antimony-free
Lot Number
just with 0~9 A~Z
Assembly’s Code
Work week during which the products was molded (eg..week 12)
The last two digits of the year In which the products was seal / molded.
Data Sheet
FM24C02C 2-wrie Serial EEPROM
Ver1.6
15
TDFN8
TSOT23-5L
Data Sheet
FM24C02C 2-wrie Serial EEPROM
Ver1.6
16
Packaging Information
PDIP 8
Symbol
MIN
‐‐‐
A
A1
0.380
b
0.380
b2
1.300
C
0.200
D
9.000
E1
6.100
E
7.320
e
L
2.920
‐‐‐
eB
NOTE:
1.
Dimensions are in Millimeters.
MAX
5.000
--0.570
1.700
0.360
10.000
7.000
8.250
2.540(BSC)
3.810
10.900
Data Sheet
FM24C02C 2-wrie Serial EEPROM
Ver1.6
17
SOP 8
Symbol
MIN
A
1.350
A1
0.050
b
0.330
c
0.150
D
4.700
E1
3.800
E
5.800
e
L
0.400
θ
0°
NOTE:
1. Dimensions are in Millimeters.
MAX
1.750
0.250
0.510
0.250
5.150
4.000
6.200
1.270(BSC)
1.270
8°
Data Sheet
FM24C02C 2-wrie Serial EEPROM
Ver1.6
18
TSSOP8
Symbol
MIN
D
2.900
E1
4.300
b
0.190
c
0.090
E
6.250
A
A1
0.050
e
L
0.450
θ
0°
NOTE:
1. Dimensions are in Millimeters.
MAX
3.100
4.500
0.300
0.200
6.550
1.200
0.150
0.650 (BSC)
0.750
8°
Data Sheet
FM24C02C 2-wrie Serial EEPROM
Ver1.6
19
TDFN8
Symbol
MIN
A
0.700
A1
0.000
D
1.900
E
2.900
D2
1.400
E2
1.400
k
b
0.200
e
L
0.200
NOTE:
1. Dimensions are in Millimeters.
MAX
0.800
0.050
2.100
3.100
1.600
1.600
0.200(MIN)
0.300
0.500(TYP)
0.400
Data Sheet
FM24C02C 2-wrie Serial EEPROM
Ver1.6
20
TSOT23-5L
Symbol
MIN
A
0.700
A1
0.000
b
0.350
c
0.080
D
2.820
E1
1.600
E
2.650
e
e1
L
0.300
θ
0°
NOTE:
1. Dimensions are in Millimeters.
MAX
0.900
0.100
0.500
0.200
3.020
1.700
2.950
0.950(BSC)
1.900(BSC)
0.600
8°
Data Sheet
FM24C02C 2-wrie Serial EEPROM
Ver1.6
21
Revision History
Version
1.0
1.1
1.2
1.3
Publication
Paragraph or
Pages
date
Illustration
Aug. 2011
20
Oct. 2011
20
AC characteristics
DC Characteristics
Dec. 2011
20
Device Addressing
Figure 7
Packaging Type
May. 2012
20
Ordering Information
1.4
Nov. 2012
20
1.5
Apr. 2013
22
1.6
Jul. 2014
23
Revise Description
Initial Document Release.
Corrected the typo in AC characteristics (the unit of "tF").
1. Changed the MIN of Vcc to 1.7V
2. Changed the next 3 bits can be any data to the
next 3 bits must be zero.
1. Added the module package of 8-pin and 6-pin
2. Modified the Disclaimer.
1. Updated the Packaging Information of TSSOP8 and
Packaging
PDIP8.
Information
2. Added TSOT23-5L package offering
Part Marking Scheme Updated the “Part Marking Scheme”
Ordering information Added TDFN8 package offering
Packaging
Information
Data Sheet
FM24C02C 2-wrie Serial EEPROM
Ver1.6
22
Sales and Service
Shanghai Fudan Microelectronics Group Co., Ltd.
Address: Bldg No. 4, 127 Guotai Rd,
Shanghai City China.
Postcode: 200433
Tel: (86-021) 6565 5050
Fax: (86-021) 6565 9115
Shanghai Fudan Microelectronics (HK) Co., Ltd.
Address: Unit 506, 5/F., East Ocean Centre, 98 Granville
Road, Tsimshatsui East, Kowloon, Hong Kong
Tel: (852) 2116 3288 2116 3338
Fax: (852) 2116 0882
Beijing Office
Address: Room 423, Bldg B, Gehua Building,
1 QingLong Hutong, Dongzhimen Alley north Street,
Dongcheng District, Beijing City, China.
Postcode: 100007
Tel: (86-010) 8418 6608
Fax: (86-010) 8418 6211
Shenzhen Office
Address: Room.1301, Century Bldg, No. 4002, Shengtingyuan
Hotel, Huaqiang Rd (North),
Shenzhen City, China.
Postcode: 518028
Tel: (86-0755) 8335 0911 8335 1011 8335 2011 8335 0611
Fax: (86-0755) 8335 9011
Shanghai Fudan Microelectronics (HK) Ltd Taiwan
Representative Office
Address: Unit 1225, 12F., No 252, Sec.1 Neihu Rd., Neihu
Dist., Taipei City 114, Taiwan
Tel : (886-2) 7721 1889
Fax: (886-2) 7722 3888
Shanghai Fudan Microelectronics (HK) Ltd Singapore
Representative Office
Address : 237, Alexandra Road, #07-01 The Alexcier,
Singapore 159929
Tel : (65) 6472 3688
Fax: (65) 6472 3669
Shanghai Fudan Microelectronics Group Co., Ltd NA
Office
Address :2490 W. Ray Road Suite#2
Chandler, AZ 85224 USA
Tel : (480) 857-6500 ext 18
Web Site: http://www.fmsh.com/
Data Sheet
FM24C02C 2-wrie Serial EEPROM
Ver1.6
23
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