ME2325-G

ME2325/ME2325-G P-Channel 30V (D-S) MOSFET MOSFET GENERAL DESCRIPTION FEATURES The ME2325 is the P-Channel logic enhancement mode power field ● RDS(ON)≦50mΩ@VGS=-10V effect transistors are produced using high cell density, DMOS trench ● RDS(ON)≦76mΩ@VGS=-4.5V technology. This high density process is especially tailored to ● Super high density cell design for extremely low R DS(ON) minimize on-state resistance. These devices are particularly suited ● Exceptional on-resistance and maximum DC current for low voltage application such as cellular phone and notebook capability computer power management and other battery powered circuits APPLICATIONS where high-side switching and low in-line power loss are needed in a ● Power Management in Note book ● Portable Equipment very small outline surface mount package. ● Battery Powered System ● DC/DC Converter PIN ● Load Switch CONFIGURATION ● DSC ● LCD Display inverter (SOT-23) Top View * The Ordering Information: ME2325 (Pb-free) ME2325 -G (Green product-Halogen free) free)BSS84(Pb-free) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Symbol Maximum Ratings Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Parameter TA=25℃ Continuous Drain Current TA=70℃ Pulsed Drain Current ID IDM TA=25℃ Maximum Power Dissipation TA=70℃ PD -4.3 -3.4 -17 1.4 A A W 0.9 Storage Temperature Range Tstg -55 to 150 ℃ Thermal Resistance-Junction to Ambient* RθJA 90 ℃/W *The device mounted on 1in2 FR4 board with 2 oz copper Jun, 2012-Ver1.2 DCC 正式發行 01 ME2325/ME2325-G P-Channel 30V (D-S) MOSFET MOSFET Electrical Characteristics (TA =25℃ Unless Otherwise Specified) Symbol Parameter Limit Min Typ V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=-250μA -30 VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250μA -1 IGSS Gate Leakage Current IDSS Zero Gate Voltage Drain Current RDS(ON) Drain-Source On-Resistance Max Unit STATIC VSD V -3 V VDS=0V, VGS=±20V ±100 nA VDS=-24V, VGS=0V -1 μA VGS=-10V, ID= -4.1A 38 50 VGS=-4.5V, ID= -3A 50 76 -1 Diode Forward Voltage IS=-1A, VGS=0V -0.77 Qg Total Gate Charge VDS=-15V, VGS=-10V, ID=-4A 17.4 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Rg Gate-Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-On Delay Time tr Turn-On Rise Time VDS=-15V, RL =5.2Ω 43.2 td(off) Turn-Off Delay Time RGEN=3.8Ω, VGS=-10V 38.2 tf Turn-Off Fall Time mΩ V DYNAMIC 8.4 nC VDS=-15V, VGS=-4.5V, ID=-4A 4.2 3.3 VDS=0V, VGS=0V, F=1MHz Ω 6.8 621 VDS=-15V, VGS=0V,f=1MHz 91.7 pF 29 55.3 ns 6.3 Notes: a. Pulse test; pulse width ≦ 300us, duty cycle≦ 2% b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice. DCC 正式發行 Jun, 2012-Ver1.2 02 ME2325/ME2325-G P-Channel 30V (D-S) MOSFET MOSFET Typical Characteristics (TJ =25℃ Noted) DCC 正式發行 Jun, 2012-Ver1.2 03 ME2325/ME2325-G P-Channel 30V (D-S) MOSFET MOSFET Typical Characteristics (TJ =25℃ Noted) DCC 正式發行 Jun, 2012-Ver1.2 04 ME2325/ME2325-G P-Channel 30V (D-S) MOSFET MOSFET SOT-23 Package Outline MILLIMETERS (mm) DIM MIN MAX A 2.800 3.00 B 1.200 1.70 C 0.900 1.30 D 0.350 0.50 G 1.780 2.04 H 0.010 0.15 J 0.085 0.20 K 0.300 0.65 L 0.890 1.02 S 2.100 3.00 V 0.450 0.60 DCC 正式發行 Jun, 2012-Ver1.2 05