SW7N65

SW7N65D N-channel Enhanced mode TO-220/TO-251/TO-251N/TO-252/TO-220F/TO-220SF / TO-262N/DFN5*6 MOSFET Features TO-220  High ruggedness  Low RDS(ON) (Typ 1.1Ω) @VGS=10V  Low Gate Charge (Typ 30nC)  Improved dv/dt Capability  100% Avalanche Tested  Application:Charge,LED, PC Power TO-251 TO-252 TO-251N BVDSS : 650V ID 1 2 1 3 2 1 3 1 3 TO-220SF TO-220F 1 2 2 1 3 2 1 3 RDS(ON) : 1.1Ω 2 3 D DFN5*6 TO-262N 1 2 3 4 2 : 7A G 8 7 6 5 S 3 TO-220(F/SF)&TO-251(N)&TO-252&TO-262N：1. Gate 2. Drain 3. Source DFN5*6：4. Gate 5,6,7,8. Drain 1,2,3,4. Source General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes Item 1 2 3 4 5 6 7 8 Sales Type SW P 7N65D SW I 7N65D SW N 7N65D SW D 7N65D SW F 7N65D SW MN 7N65D SW J 7N65D SW HA 7N65D Marking SW7N65D SW7N65D SW7N65D SW7N65D SW7N65D SW7N65D SW7N65D SW7N65D Package TO-220 TO-251 TO-251N TO-252 TO-220F TO-220SF TO-262N DFN5*6 Packaging TUBE TUBE TUBE REEL TUBE TUBE TUBE REEL Absolute maximum ratings Symbol VDSS ID Parameter TO220 Drain to source voltage Continuous drain current (@TC=25oC) Continuous drain current (@TC=100oC) IDM Drain current pulsed VGS Gate to source voltage EAS Single pulsed avalanche energy EAR dv/dt (note 1) TL A 4.4* A 28 A V (note 2) 430 mJ Repetitive avalanche energy (note 1) 40 mJ Peak diode recovery dv/dt (note 3) 5 V/ns 208.3 173.6 27.8 186.6 Total power dissipation (@Ta=25oC) 25oC TSTG, TJ 7* ±30 Total power dissipation (@TC=25oC) PD Value TO-251/TO- TO- TO-220F/TO- TO- DFN5* Unit 251N 252 220SF 262N 6 650 V Derating factor above Operating junction temperature & storage temperature Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 1.67 1.39 0.22 1.5 W 2.4 W 0.02 W/oC -55 ~ + 150 oC 300 oC *. Drain current is limited by junction temperature. Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Dec. 2018. Rev. 8.0 1/8 SW7N65D Thermal characteristics Symbol Rthjc Rthja Parameter Thermal resistance, Junction to case Thermal resistance, Junction to ambient TO220 0.6 60 Value TO-251/TO- TO- TO-220F/TO- TO- DFN5* Unit 251N 252 220SF 262N 6 oC/W 0.72 4.5 0.67 82 50 61 51.4 oC/W Note: Rthja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d efined as the solder mounting surface of the drain pins. Rthjc is guaranteed by design while Rthca is determined by the user's board design. DFN5*6 Rthja ：51.4oC/W on a 1 in2 pad of 2oz copper. Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Off characteristics BVDSS Drain to source breakdown voltage ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient IDSS Drain to source leakage current IGSS VGS=0V, ID=250uA Min. Typ. Max. 650 ID=250uA, referenced to 25oC Unit V V/oC 0.51 Gate to source leakage current, forward VDS=650V, VGS=0V VDS=520V, TC=125oC VGS=30V, VDS=0V 1 50 100 uA uA nA Gate to source leakage current, reverse VGS=-30V, VDS=0V -100 nA 4.5 1.4 V Ω Ω S On characteristics Gate threshold voltage VGS(TH) RDS(ON) Test conditions Drain to source on state resistance Gfs Forward transconductance Dynamic characteristics Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance td(on) Turn on delay time tr Rising time td(off) Turn off delay time tf Fall time Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Rg Gate resistance VDS=VGS, ID=250uA VGS=10V, ID = 3.5A, Tj=25oC VGS=10V, ID = 3.5A, Tj=125oC VDS=30 V, ID =3.5A 2.5 1.1 2.4 6.3 1230 108 16 16 36 83 40 30 5 15 1.7 VGS=0V, VDS=25V, f=1MHz VDS=350V, ID=7A, RG=25Ω (note 4,5) VDS=520V, VGS=10V, ID=7A (note 4,5) VDS=0V, Scan F mode pF ns nC Ω Source to drain diode ratings characteristics Symbol IS ISM VSD trr Qrr Parameter Continuous source current Pulsed source current Diode forward voltage drop. Reverse recovery time Reverse recovery charge Test conditions Integral reverse p-n Junction diode in the MOSFET IS=7A, VGS=0V IS=7A, VGS=0V, dIF/dt=100A/us Min. Typ. Max. 7 28 1.4 436 8.7 Unit A A V ns uC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L = 17.5mH, IAS = 7A, VDD = 50V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤ 7A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%. 5. Essentially independent of operating temperature. Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Dec. 2018. Rev. 8.0 2/8 SW7N65D Fig. 1. On-state characteristics Fig. 3. On-resistance variation vs. drain current and gate voltage Fig 5. Breakdown Voltage Variation vs. Junction Temperature Fig. 2. Transfer Characteristics Fig. 4. On-state current vs. diode forward voltage Fig. 6. On resistance variation vs. junction temperature Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Dec. 2018. Rev. 8.0 3/8 SW7N65D Fig. 7. Gate charge characteristics Fig. 9. Maximum safe operating area(TO-220) Fig. 11. Maximum safe operating area (TO-220F/TO-220SF) Fig. 8. Capacitance Characteristics Fig. 10. Maximum safe operating area (TO-251/TO-251N/TO-252) Fig. 12. Maximum safe operating area(TO-262N) Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Dec. 2018. Rev. 8.0 4/8 SW7N65D Fig. 13. Maximum safe operating area(DFN5*6) Fig. 14. Transient thermal response curve(TO-220) Fig. 15. Transient thermal response curve (TO-251/TO-251N/TO-252) Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Dec. 2018. Rev. 8.0 5/8 SW7N65D Fig. 16. Transient thermal response curve(TO-220F/TO-220SF) Fig. 17. Transient thermal response curve(TO-262N) Fig. 18. Transient thermal response curve(DFN5*6) Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Dec. 2018. Rev. 8.0 6/8 SW7N65D Fig. 19. Gate charge test circuit & waveform Fig. 20. Switching time test circuit & waveform VDS 90% RL RGS VDS VDD VIN 10VIN DUT 10% 10% td(on) tr tON td(off) tf tOFF Fig. 21. Unclamped Inductive switching test circuit & waveform Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Dec. 2018. Rev. 8.0 7/8 SW7N65D Fig. 22. Peak diode recovery dv/dt test circuit & waveform DUT + V DS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRM VDS RG Diode reverse current VDD Diode recovery dv/dt Same type as DUT 10VGS VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period VDD VF Body diode forward voltage drop DISCLAIMER * All the data & curve in this document was tested in XI’AN SEMIPOWER TESTING & APPLICATION CENTER. * This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing. * Qualification standards can also be found on the Web site (http://www.semipower.com.cn) * Suggestions for improvement are appreciated, Please send your suggestions to samwin@samwinsemi.com Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Dec. 2018. Rev. 8.0 8/8