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1N4007G-K

1N4007G-K

  • 厂商:

    TAIWANSEMICONDUCTOR(台半)

  • 封装:

    -

  • 描述:

    1N4007G-K

  • 详情介绍
  • 数据手册
  • 价格&库存
1N4007G-K 数据手册
4 1N4001G-K - 1N4007G-K Taiwan Semiconductor 1A, 50V - 1000V Glass Passivated Rectifier FEATURES KEY PARAMETERS ● ● ● ● ● ● Glass passivated chip junction High current capability, Low VF High reliability High surge current capability Low power loss, high efficiency Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT IF(AV) 1 A VRRM 50 - 1000 V IFSM 30 A TJ MAX 150 °C Package DO-204AL (DO-41) Configuration Single Die APPLICATIONS ● ● ● ● Switching mode power supply (SMPS) Adapters TV Monitor MECHANICAL DATA ● Case: DO-204AL (DO-41) ● Molding compound meets UL 94V-0 flammability rating ● Packing code with suffix "G" means green compound (halogen-free) ● Terminal: Pure tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 1A whisker test ● Polarity: As marked ● Weight: 0.33 g (approximately) DO-204AL (DO-41) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Marking code on the device Repetitive peak reverse voltage Reverse voltage, total rms value Maximum DC blocking voltage Forward current Surge peak forward current, 8.3 ms single half sine-wave superimposed on rated load per diode Junction temperature Storage temperature SYMBOL 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 G-K G-K G-K G-K G-K G-K G-K UNIT 1N4001G 1N4002G 1N4003G 1N4004G 1N4005G 1N4006G 1N4007G VRRM 50 100 200 400 600 800 1000 V VR(RMS) 35 70 140 280 420 560 700 V VDC 50 100 200 400 600 800 1000 V IF(AV) 1 A IFSM 30 A TJ - 55 to +150 °C TSTG - 55 to +150 °C 1 Version:A1612 4 1N4001G-K - 1N4007G-K Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT RӨJA 80 °C/W Junction-to-ambient thermal resistance ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage per diode CONDITIONS (1) IF = 1A,TJ = 25°C Reverse current @ rated VR per diode (2) Junction capacitance Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms TJ = 25°C TJ = 125°C 1 MHz, VR=4.0V SYMBOL TYP MAX UNIT VF - 1 - 5 V µA - 100 µA 10 - pF IR CJ ORDERING INFORMATION PART NO. PACKIN PACKING CODE G CODE SUFFIX PACKAGE PACKING DO-41 3,000 / Ammo box (52mm taping) DO-41 5,000 / 13" Paper reel R1 DO-41 5,000 / 13" Paper reel (Reverse) B0 DO-41 1,000 / Bulk packing A0 1N400xG-K (Note 1, 2) R0 G Notes: 1. "x" defines voltage from 50V (1N4001G-K) to 1000V (1N4007G-K) 2. Whole series with green compound (halogen-free) EXAMPLE P/N EXAMPLE P/N PART NO. 1N4001G-K A0G 1N4001G-K PACKING PACKING CODE CODE SUFFIX A0 G 2 DESCRIPTION Green compound Version:A1612 4 1N4001G-K - 1N4007G-K Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig2. Typical Junction Capacitance 100 1.5 CAPACITANCE (pF) AVERAGE FORWARD CURRENT (A) Fig1. Forward Current Derating Curve 1 0.5 10 f=1.0MHz Vsig=50mVp-p 0 0 25 50 75 100 125 1 150 0.1 1 AMBIENT TEMPERATURE(oC) TJ=125° 1 TJ=75°C 0.1 TJ=25°C 0.01 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 10 10 1 UF1DLW TJ=125°C 1 TJ=25°C 0.1 (A) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (μA) Fig4. Typical Forward Characteristics 100 0 100 REVERSE VOLTAGE (V) Fig3. Typical Reverse Characteristics 10 10 0.01 Pulse width 0.001 0.1 0.3 0.5 0.6 0.4 0.7 0.5 0.6 0.7 0.8 0.9 0.8 0.9 1 1.1 1.2 1.3 1 1.4 1.1 1.5 FORWARD VOLTAGE (V) 3 Version:A1612 1.2 4 1N4001G-K - 1N4007G-K Taiwan Semiconductor PEAK FORWARD SURGE CURRENT(A) Fig5. Maximum Non-repetitive Forward Surge Current 30 25 20 15 10 5 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 4 Version:A1612 4 1N4001G-K - 1N4007G-K Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-204AL (DO-41) DIM. Unit (mm) Unit (inch) Min Max Min Max A 2.00 2.70 0.079 0.106 B 0.71 0.86 0.028 0.034 C 25.40 - 1.000 - D 4.20 5.20 0.165 0.205 E 25.40 - 1.000 - MARKING DIAGRAM P/N G YWW F 5 = Marking Code = Green Compound = Date Code = Factory Code Version:A1612 4 1N4001G-K - 1N4007G-K Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version:A1612
1N4007G-K
物料型号:1N4001G-K 至 1N4007G-K,由台湾半导体公司生产。

器件简介:这些是玻璃钝化整流器,具有高电流承受能力、低正向电压降、高可靠性、高浪涌电流承受能力、低功耗高效率等特点。它们符合RoHS指令2011/65/EU和WEEE 2002/96/EC,并根据IEC 61249-2-21无卤素。

引脚分配:文档中没有明确提供引脚分配图,但通常整流器会有阳极和阴极两个引脚。

参数特性:包括正向电流(1A)、反向峰值电压(50V至1000V)、浪涌峰值电流(30A)、最大结温(150℃)等。

功能详解:文档提供了热性能参数、电气规格、订购信息、特性曲线和最大非重复性正向浪涌电流等详细信息。

应用信息:适用于开关电源(SMPS)、适配器、电视、显示器等。

封装信息:封装类型为DO-204AL (DO-41),符合UL 94V-0阻燃等级,采用绿色化合物(无卤素),纯锡镀引线,符合J-STD-002可焊性标准,并通过JESD 201 1A级晶须测试。
1N4007G-K 价格&库存

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