VSP008N10MSC

VSP008N10MSC 100V/85A N-Channel Advanced Power MOSFET Features V DS 100 V R DS(on),TYP@ VGS=10 V 6.2 mΩ R DS(on),TYP@ VGS=4.5 V 7.7 mΩ ID 85 A  N-Channel，5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Ⅱ Technology PDFN5x6  100% Avalanche test  Pb-free lead plating; RoHS compliant Part ID Package Type Marking VSP008N10MSC PDFN5x6 008N10MC Tape and reel information 3000PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter Rating Unit V(BR)DSS Drain-Source breakdown voltage 100 V VGS Gate-Source voltage ±20 V IS Diode continuous forward current TC =25°C 85 A ID TC =25°C 85 A Continuous drain current @VGS=10V TC =100°C 53 A IDM Pulse drain current tested ① TC =25°C 340 A TA=25°C 21 A IDSM Continuous drain current @VGS=10V TA=70°C 16.5 A 104 mJ TC =25°C 69 W TA=25°C 4 W -55 to 150 °C Typical Unit EAS Avalanche energy, single pulsed ② PD Maximum power dissipation PDSM Maximum power dissipation ③ TSTG , TJ Storage and Junction Temperature Range Thermal Characteristics Symbol Parameter R JC Thermal Resistance, Junction-to-Case 1.8 °C/W R JA Thermal Resistance, Junction-to-Ambient 30 °C/W Copyright Vanguard Semiconductor Co., Ltd Rev B – JAN, 2019 www.vgsemi.com VSP008N10MSC 100V/85A N-Channel Advanced Power MOSFET Electrical Characteristics Symbol Parameter Condition Min. Typ. Max. Unit Static Electrical Characteristics @ Tj=25°C (unless otherwise stated) Drain-Source Breakdown Voltage VGS=0V, ID=250μA 100 -- -- V Zero Gate Voltage Drain Current VDS=100V,VGS=0V -- -- 1 μA Zero Gate Voltage Drain Current( Tj =125℃) VDS=100V,VGS=0V -- -- 100 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(TH) Gate Threshold Voltage VDS=VGS,ID=250μA 1.2 1.7 2.3 V Drain-Source On-State Resistance VGS=10V, ID=20A -- 6.2 8 mΩ Drain-Source On-State Resistance VGS=4.5V, ID=15A -- 7.7 11 mΩ 1460 1720 1975 pF 935 1100 1265 pF 60 75 85 pF -- 2.3 -- Ω -- 31 -- nC -- 7.8 -- nC -- 7.5 -- nC -- 9.9 -- ns V(BR)DSS IDSS RDS(ON) RDS(ON) Dynamic Electrical Characteristics @ Tj = 25°C (unless otherwise stated) Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=30V,VGS=0V, f=1MHz f=1MHz VDS=30V,ID=20A, VGS=10V Switching Characteristics t d(on) Turn-on Delay Time tr Turn-on Rise Time ID=20A, -- 6 -- ns t d(off) Turn-Off Delay Time RG=3Ω, -- 29.3 -- ns tf Turn-Off Fall Time -- 8.5 -- ns VDD=30V, VGS=10V Source- Drain Diode Characteristics@ Tj = 25°C (unless otherwise stated) VSD Forward on voltage ISD=20A,VGS=0V -- 0.8 1.2 V t rr Reverse Recovery Time Tj=25℃,Isd=20A, -- 21 -- ns Qrr Reverse Recovery Charge -- 38.7 -- nC VGS=0V di/dt=500A/μs NOTE: ① ② ③ Repetitive rating; pulse width limited by max junction temperature. Limited by TJmax, starting TJ = 25°C, L = 0.5mH, RG = 25Ω, IAS = 16A, VGS =10V. Part not recommended for use above this value. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C.  Pulse width ≤ 300μs; duty cycle≤ 2%. Copyright Vanguard Semiconductor Co., Ltd Rev B – JAN, 2019 www.vgsemi.com VSP008N10MSC 100V/85A N-Channel Advanced Power MOSFET ID, Drain-Source Current (A) VGS(TH), Gate -Source Voltage (V) Typical Characteristics VDS, Drain -Source Voltage (V) Fig1. Typical Output Characteristics Tj - Junction Temperature (°C) Fig2. VGS(TH) Gate -Source Voltage Vs. Tj Normalized On Resistance ID, Drain-Source Current (A) Tc, Case Temperature (°C) Fig3. Typical Transfer Characteristics Fig4. Normalized On-Resistance Vs. Tj ID - Drain Current (A) Tj - Junction Temperature (°C) ISD, Reverse Drain Current (A) VGS, Gate -Source Voltage (V) VSD, Source-Drain Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage Copyright Vanguard Semiconductor Co., Ltd Rev B – JAN, 2019 VDS, Drain -Source Voltage (V) Fig6. Maximum Safe Operating Area www.vgsemi.com VSP008N10MSC 100V/85A N-Channel Advanced Power MOSFET C, Capacitance (pF) VGS, Gate-Source Voltage (V) Typical Characteristics VDS, Drain-Source Voltage (V) Fig8. Typical Gate Charge Vs. Gate-Source Voltage Thermal Resistance ZqJA Normalized Transient Fig7. Typical Capacitance Vs. Drain-Source Voltage Qg - Total Gate Charge (nC) Pulse Width (s) Fig9. Normalized Maximum Transient Thermal Impedance Fig10. Unclamped Inductive Test Circuit and waveforms Copyright Vanguard Semiconductor Co., Ltd Rev B – JAN, 2019 Fig11. Switching Time Test Circuit and waveforms www.vgsemi.com VSP008N10MSC 100V/85A N-Channel Advanced Power MOSFET Marking Information Vs 008N10MC XXXYWW 1st line： 2nd line： 3rd line： Vanguard Code（Vs） ， Vanguard Logo Part Number（008N10MC） Date code （XXXYWW） XXX： Wafer Lot Number Code , code changed with Lot Number Y： Year Code，(e.g. E=2017, F=2018, G=2019, H=2020, etc) WW： Week Code (01 to 53) Copyright Vanguard Semiconductor Co., Ltd Rev B – JAN, 2019 www.vgsemi.com VSP008N10MSC 100V/85A N-Channel Advanced Power MOSFET PDFN5x6 Package Outline Data Notes: Symbol DIMENSIONS ( unit : mm ) 1. Refer to JEDEC MO-240 variation AA. Min Typ Max 2. Dimensions "D" and "E" do NOT include mold flash A 0.90 1.00 1.20 protrusions or gate burrs. A1 0.00 -- 0.05 3. Dimensions "D" and "E" include interterminal flash or b 0.30 0.40 0.51 protrusion. Interterminal flash or protrusion shall not exceed c 0.20 0.25 0.33 0.25mm per side. D 4.80 4.90 5.40 D1 3.61 4.00 4.25 E 5.65 5.80 6.06 E1 5.90 6.10 6.35 E2 3.38 3.58 3.92 Customer Service Sales and Service: sales@vgsemi.com 1.27 BSC e L 0.51 0.61 0.71 L1 -- -- 0.15 L2 0.41 0.51 0.61 θ 0° -- 12° Copyright Vanguard Semiconductor Co., Ltd Rev B – JAN, 2019 Vanguard Semiconductor CO., LTD TEL: (86-755) -26902410 FAX: (86-755) -26907027 WEB: www.vgsemi.com www.vgsemi.com