PDS6903

PDS6903 60V P-Channel MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This BVDSS RDSON ID -60V 30m -8.5A advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Features -60V,-8.5A, RDS(ON) =30mΩ@VGS = -10V performance, and withstand high energy pulse in the  avalanche and commutation mode. These devices are  Fast switching well suited for high efficiency fast switching applications.  Green Device Available  Suit for -4.5V Gate Drive Applications SOP8 Pin Configuration D D D D Applications  POL Applications  Load Switch D  LED Application G S S S G S Absolute Maximum Ratings Tc=25℃ unless otherwise noted Rating Units VDS Symbol Drain-Source Voltage -60 V VGS Gate-Source Voltage ±20 V Drain Current – Continuous (TC=25℃) -8.5 A Drain Current – Continuous (TC=100℃) -5.4 A Drain Current – Pulsed -34 A 4.1 W 0.033 W/℃ ID IDM Parameter 1 Power Dissipation (TC=25℃) PD Power Dissipation – Derate above 25℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Characteristics Symbol Parameter Typ. Max. Unit RθJC Thermal Resistance Junction to Case --- 30 ℃/W RθJA Thermal Resistance Junction to Ambient --- 62 ℃/W Potens semiconductor corp. Ver.1.00 1 PDS6903 60V P-Channel MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Off Characteristics Symbol Min. Typ. Max. Unit VGS=0V , ID=-250uA -60 --- --- V VDS=-60V , VGS=0V , TJ=25℃ --- --- uA VDS=-48V , VGS=0V , TJ=125℃ --- --- -1 -10 VGS=±20V , VDS=0V --- --- ±100 nA VGS=-10V , ID=-8A --- 23 30 m VGS=-4.5V , ID=-6A --- 28 40 m -1.0 -1.6 -2.5 V --- 18 --- S --- 43.8 88 --- 4.6 9 --- 8.3 17 --- 25 50 VDD=-30V , VGS=-10V , RG=6 --- 13.8 28 ID=-1A --- 148 290 Fall Time2 , 3 --- 51 100 Ciss Input Capacitance --- 2595 3900 Coss Output Capacitance --- 162 240 Crss Reverse Transfer Capacitance --- 115 170 Min. Typ. Max. Unit --- --- -8.5 A --- --- -17 A --- --- -1 V BVDSS IDSS IGSS Parameter Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Conditions uA On Characteristics RDS(ON) VGS(th) gfs Static Drain-Source On-Resistance Gate Threshold Voltage VGS=VDS , ID =-250uA Forward Transconductance VDS=-10V , ID=-3A Dynamic and switching Characteristics Qg Qgs Qgd Td(on) Tr Td(off) Tf Total Gate Charge2 , 3 Gate-Source Gate-Drain Charge2 , 3 Turn-On Delay Rise VDS=-30V , VGS=-10V , ID=-5A Charge2 , 3 Time2 , 3 Time2 , 3 Turn-Off Delay Time2 , 3 VDS=-25V , VGS=0V , F=1MHz nC ns pF Drain-Source Diode Characteristics and Maximum Ratings Symbol Parameter IS Continuous Source Current ISM Pulsed Source Current VSD Diode Forward Voltage Conditions VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. Potens semiconductor corp. Ver.1.00 2 PDS6903 TC , Case Temperature (℃) Continuous Drain Current vs. TC TJ , Junction Temperature (℃) Normalized Vth vs. TJ Fig.4 Square Wave Pulse Duration (s) Fig.5 Qg , Gate Charge (nC) Gate Charge Waveform -ID , Continuous Drain Current (A) Normalized Thermal Response (RθJA) Fig.3 Fig.2 TJ , Junction Temperature (℃) Normalized RDSON vs. TJ -VGS , Gate to Source Voltage (V) Normalized Gate Threshold Voltage (V) Fig.1 Normalized On Resistance (m) ID , Continuous Drain Current (A) 60V P-Channel MOSFETs -VDS , Drain to Source Voltage (V) Normalized Transient Impedance Fig.6 Potens semiconductor corp. Maximum Safe Operation Area Ver.1.00 3 PDS6903 60V P-Channel MOSFETs -VDS 90% 10% -VGS Td(on) Tr Ton Fig.7 Td(off) Tf Toff Switching Time Waveform Fig.8 Potens semiconductor corp. Gate Charge Waveform Ver.1.00 4 PDS6903 60V P-Channel MOSFETs SOP8 PACKAGE INFORMATION A A1 Dimensions In Millimeters Min Max 1.350 1.750 0.100 0.250 Dimensions In Inches Min Max 0.053 0.068 0.004 0.009 A2 A3 b c D E E1 e h L L1 θ 1.300 1.500 0.600 0.700 0.390 0.480 0.210 0.260 4.700 5.100 5.800 6.200 3.700 4.100 1.270(BSC) 0.250 0.500 0.500 0.800 1.050(BSC) 0° 8° 0.052 0.059 0.024 0.027 0.016 0.018 0.009 0.010 0.186 0.200 0.229 0.244 0.146 0.161 0.050(BSC) 0.010 0.019 0.019 0.031 0.041(BSC) 0° 8° Symbol Potens semiconductor corp. Ver.1.00 5