WNMD2153-6/TR

WNMD2153 WNMD2153 Http//:www.willsemi.com Dual N-Channel, 20V, 0.89A, Small Signal MOSFET VDS (V) Rds(on) (ȍ) 0.220@ VGS=4.5V 20 0.260@ VGS=2.5V 0.320@ VGS=1.8V SOT-363 Descriptions The WNMD2153 is N-Channel enhancement D1 G2 S2 6 5 4 1 S1 2 G1 3 D2 MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. Standard Product WNMD2153 is Pb-free. Pin configuration (Top view) Features 6 z Trench Technology z Supper high density cell design z Excellent ON resistance z Extremely Low Threshold Voltage z Small package SOT-363 Small Signal Switch z Load Switch z Level Shift Will Semiconductor Ltd. 3 = Month (A~Z) Marking Applications z 2 53 = Device Code * DC-DC converter circuit 4 53* 1 z 5 Order information Device Package Shipping WNMD2153-6/TR SOT-363 3000/Reel&Tape 1 Dec, 2011 - Rev.1. 3 WNMD2153 Absolute Maximum ratings Parameter Symbol 10 S Steady State Drain-Source Voltage VDS +20 Gate-Source Voltage VGS f6 Continuous Drain Current a Maximum Power Dissipation a Continuous Drain Current b Maximum Power Dissipation b TA=25°C ID TA=70°C TA=25°C PD TA=70°C TA=25°C ID TA=70°C TA=25°C PD TA=70°C Unit V 0.89 0.81 0.71 0.64 0.38 0.31 0.24 0.20 0.76 0.69 0.61 0.55 0.28 0.23 0.17 0.15 A W A W Pulsed Drain Current c IDM 1.4 A Operating Junction Temperature TJ 150 °C Lead Temperature TL 260 °C Storage Temperature Range Tstg -55 to 150 °C Thermal resistance ratings Single Operation Parameter Junction-to-Ambient Thermal Resistance a Junction-to-Ambient Thermal Resistance b Junction-to-Case Thermal Resistance Symbol t ” 10 s Steady State t ” 10 s Steady State Steady State RșJA RșJA RșJC Typical Maximum 276 325 328 395 375 445 446 532 260 300 310 360 366 432 415 486 498 575 265 305 Unit °C/W Dual Operation Junction-to-Ambient Thermal Resistance a Junction-to-Ambient Thermal Resistance b Junction-to-Case Thermal Resistance t ” 10 s Steady State t ” 10 s Steady State Steady State RșJA RșJA RșJC a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR4 board using minimum pad size, 1oz copper c Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1% d Repetitive rating, pulse width limited by junction temperature TJ=150°C. Will Semiconductor Ltd. 2 °C/W Dec, 2011 - Rev.1. 3 WNMD2153 Electronics Characteristics (Ta=25oC, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250uA 20 V Zero Gate Voltage Drain Current IDSS VDS =16 V, VGS = 0V 1 uA Gate-to-source Leakage Current IGSS VDS = 0 V, VGS =±5V ±5 uA VGS(TH) VGS = VDS, ID = 250uA 0.58 0.85 V VGS = 4.5V, ID = 0.55A 220 310 VGS = 2.5V, ID = 0.45A 260 360 VGS = 1.8V, ID = 0.35A 320 460 ON CHARACTERISTICS Gate Threshold Voltage Drain-to-source On-resistance Forward Transconductance RDS(on) gFS 0.45 VDS = 5 V, ID = 0.55A mŸ 2.0 S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS 50 Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) VGS = 4.5 V, VDS = 10 V, 0.06 Gate-to-Source Charge QGS ID = 0.55A 0.15 Gate-to-Drain Charge QGD VGS = 0 V, f = 100kHz, V DS = pF 13 10 V 8 1.15 nC 0.23 SWITCHING CHARACTERISTICS Turn-On Delay Time td(ON) 22 Rise Time tr VDD=10V, VGS=4.5V, 80 Turn-Off Delay Time td(OFF) ID=0.55A, RG=6Ω 700 Fall Time tf ns 380 BODY DIODE CHARACTERISTICS Forward Voltage Will Semiconductor Ltd. VSD VGS = 0 V, IS =0.35A 3 0.5 0.7 1.5 V Dec, 2011 - Rev.1. 3 WNMD2153 Typical Characteristics (Ta=25oC, unless otherwise noted) 2.0 VGS= 2.5V ~5.0V 3 IDS-Drain to Source Current(A) IDS-Drain-to-Source Current (A) 4 VGS=2.0V 2 VGS=1.5V 1 0 0.0 0.4 0.8 1.2 1.6 VDS=5V 1.6 1.2 o T=-50 C o T=25 C 0.8 o T=125 C 0.4 0.0 0.0 2.0 0.4 Output characteristics 1.6 2.0 1600 350 RDS(on)- On-Resistance (m:) RDS(on)- On-Resistance(m:) 1.2 Transfer characteristics 400 VGS=1.8V 300 250 VGS=2.5V 200 VGS=4.5V 150 100 0.4 0.8 1.2 1.6 1200 2.0 800 400 1.0 IDS-Drain-to-Source Current(A) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS-Gate-to-Source Voltage(V) On-Resistance vs. Drain current On-Resistance vs. Gate-to-Source voltage VGS=4.5V, ID=0.55A 280 240 200 160 120 -50 -25 0 VGS(TH) Gate Threshold Voltage (V) 0.8 320 RDS(on)- On-Resistance (m:) 0.8 VGS-Gate-to-Source Voltage(V) VDS-Drain-to-Source Voltage(V) 0.7 0.6 0.5 0.4 0.3 0.2 -50 25 50 75 100 125 150 o Temperature( C) On-Resistance vs. Junction temperature Will Semiconductor Ltd. ID=250uA -25 0 25 50 75 100 125 150 o Temperature ( C) Threshold voltage vs. Temperature 4 Dec, 2011 - Rev.1. 3 WNMD2153 0.8 VGS=0V F=100kHz C - Capacitance(pF) 50 40 Ciss Coss Crss 30 20 10 0 0 2 4 6 8 ISD-Source to Drain Current(A) 60 0.6 o T=150 C 0.4 o T=25 C 0.2 0.1 10 0.2 VDS Drain-to-Source Voltage (V) Capacitance 0.3 0.4 0.5 0.6 0.7 0.8 VSD-Source-to-Drain Voltage(V) 0.9 Body diode forward voltage ID - Drain Current (A) 10 1 10 ms 100 ms 0.1 Limited by RDS(on) 1s 10 s DC 0.01 TA = 25 °C Single Pulse 0.001 0.1 1 10 VDS - Drain-to-Source Voltage (V) 100 Safe operating power 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 320 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 Transient thermal response (Junction-to-Ambient) Will Semiconductor Ltd. 5 Dec, 2011 - Rev.1. 3 600 WNMD2153 Package outline dimensions SOT-363 Symbol Dimension in Millimeters Min. Max. A 0.900 1.100 A1 0.000 0.100 A2 0.900 1.000 b 0.150 0.350 c 0.080 0.150 D 2.000 2.200 E 1.150 1.350 E1 2.150 2.450 e e1 0.650 TYP 1.200 L L1 ș Will Semiconductor Ltd. 1.400 0.525 REF 0.260 0 0.460 o 8o 6 Dec, 2011 - Rev.1. 3