PE606BA

PE606BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID3 30V 18mΩ @VGS = 10V 23A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) SYMBOL VDS LIMITS UNITS Drain-Source Voltage PARAMETERS/TEST CONDITIONS 30 V Gate-Source Voltage VGS ±20 V Tc = 25 °C Continuous Drain Current3 Tc = 100 °C TA = 25 °C 23 ID 15 10.6 TA= 70 °C Pulsed Drain Current1 Avalanche Current Avalanche Energy L =0.1mH Power Dissipation IDM 60 IAS 12.6 EAS 7.9 TC = 25 °C Power Dissipation TC = 100 °C TA = 25 °C 4 mJ 17 7 PD W 3.5 TA = 70 °C 2.2 TJ, Tstg Operating Junction & Storage Temperature Range A 8.5 -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient 2 t ≦10s RqJA 35 Junction-to-Ambient Junction-to-Case 2 Steady-State RqJA 70 Steady-State RqJC 7 1 UNITS °C / W Pulse width limited by maximum junction temperature. 2 The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. 3 Package limitation current is 11A. 4 The Power dissipation is based on RqJA t ≦10s value. REV 1.1 1 2017/7/6 PE606BA N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX 1.75 2.3 UNITS STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250mA 30 VGS(th) VDS = VGS, ID = 250mA 1.3 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V 1 VDS = 20V, VGS = 0V, TJ =55 °C 10 mA Gate Threshold Voltage Drain-Source On-State Resistance1 RDS(ON) Forward Transconductance1 gfs Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg V VGS = 4.5V, ID = 6A 19 27 VGS = 10V , ID =7A 13 18 VDS = 10V, ID = 7A 25 mΩ S DYNAMIC Gate-Source Charge Gate-Drain Charge2 Turn-On Delay Time 2 7.5 Turn-Off Delay Time VDS = 15V , ID = 7A Qgd 2.3 td(on) 17 td(off) VDD= 15V, ID @ 7A, VGEN = 10V, RG= 6Ω nC 17 nS 37 tf 18 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 1 IS Forward Voltage Reverse Recovery Time VSD Reverse Recovery Charge Qrr trr IF = 7A, VGS = 0V IF = 7A, dlF/dt = 100A / μS 1 Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2 Independent of operating temperature. 3 4.3 1.1 tr 2 Ω 2 Qgs 2 Fall Time2 VGS = 0V, VDS = 0V, f = 1MHz Qg(VGS=4.5V) 2 pF 64 43 Qg(VGS=10V) Total Gate Charge2 Rise Time 333 VGS = 0V, VDS = 15V, f = 1MHz 15 A 1.1 V 8.4 nS 2.2 nC Package limitation current is 11A. REV 1.1 2 2017/7/6 PE606BA N-Channel Enhancement Mode MOSFET REV 1.1 3 2017/7/6 PE606BA N-Channel Enhancement Mode MOSFET REV 1.1 4 2017/7/6 PE606BA N-Channel Enhancement Mode MOSFET REV 1.1 5 2017/7/6 PE606BA N-Channel Enhancement Mode MOSFET A. Marking Information(此产品代码为：F2） B. Tape&Reel Information:5000pcs/Reel REV 1.1 6 2017/7/6 PE606BA N-Channel Enhancement Mode MOSFET REV 1.1 7 2017/7/6 PE606BA N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.1 8 2017/7/6