HA210N06

210A 60V N-Channel MOSFET HA210N06  FEATURES  BVDSS = 60 V RDS(on) typ = 4mΩ 60V/210A ID = 210 A RDS(ON)= 4mΩ (Max)@ VGS=10V  Lead free and Green Device Available  Low Rds-on to Minimize Conductive Loss  High avalanche Current TO-3P 1 2 3 1.Gate 2. Drain 3. Source  Application  Power Supply  UPS  Battery Management System Absolute Maximum Ratings (TA=25°C unless otherwise noted) Symbol VDSS VGSS ID3 IDP4 IAS5 EAS5 PD TJ, TSTG Parameter Drain-to-Source Voltage Gate-to-Source Voltage TC=25°C TC=100°C TC=25°C Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche energy TC=25°C TC=100°C Maximum Power Dissipation Junction & Storage Temperature Range Maximum Unit 60 ±25 210 130 V V 40 800 220 110 -55~175 A mJ W °C Thermal Characteristics Symbol Rθjc Rθja Parameter Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient Rev. 0.9 – March, 2012 1 Typical Unit 0.68 62.5 ℃/W 210A 60V N-Channel MOSFET HA210N06 Electrical Characteristics (TA=25°C unless otherwise noted) Symbol Parameter Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current RDS(on)1 Drain-Source On-Resistance Test Conditions Min. Typ Max. Unit VGS=0V,ID=250uA VDS=48V,VGS=0V TJ=125°C VDS=VGS,ID=250uA 60 — — 2 — — — 3 — 1 20 4 VGS=±25V, VDS=0V VGS=10V, ID=75A — — — — 3.2 — ±100 4 — ISD=75A,VGS=0V — — — — 0.8 — 48 72 1.3 — — V A nS nC — 2 — Ω — — — — — — — 5800 1020 505 29 19 42 53 — — — — — — — — — — 135 23 48 — V uA V nA mΩ Diode Characteristics VSD1 IS3 trr Qrr Diode Forward Voltage Diode Continuous Forward Current Reverse Recovery Time Reverse Recovery Charge Dynamic Characteristics2 RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Gate Charge Characteristics2 Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain Charge IF=75A,VDD=60V dI/dt=100A/us VGS=0V, VDS=0V, Frequency=1MHz VGS=0V, VDS=25V Frequency=1MHz VDD=30V,ID=75A, VGS=10V,RG=25Ω VDS=48V,VGS=10V ID=75A 50 — — pF nS nC Note: 1: Pulse test; pulse width ≦ 300us, duty cycle ≦ 2%. 2: Guaranteed by design, not subject to production testing. 3: Package limitation current is 50A.Calculated continuous current based on maximum allowable junction temperature. 4: Repetitive rating, pulse width limited by max junction temperature. 5: Starting TJ = 25°C,L = 0.5mH,IAS = 82A. Rev. 0.9 – March, 2012 2 210A 60V N-Channel MOSFET HA210N06 Ty ypical O Operatin ng Charracteristics Rev. R 0.9 – Ma arch, 2012 3 210A 60V N-Channel MOSFET HA210N06 Ty ypical O Operatin ng Charracteristics Rev. R 0.9 – Ma arch, 2012 4 210A 60V N-Channel MOSFET HA210N06 Ty ypical O Operatin ng Charracteristics Rev. R 0.9 – Ma arch, 2012 5 Package Dimension TO-3P 4.8±0.20 .20 1.5±0.20 18.7±0.20 ±0 .2 φ3 13.9±0.20 14.9±0.20 19.9±0.20 15.6±0.20 13.6±0.20 9.6±0.20 5.45typ 5.45typ 3.5±0.20 3±0.20 2±0.20 1±0.20 16.5±0.20 1.4±0.20 0.6±0.20