IRLML6401

IRLML6401 P-Ch 20V Fast Switching MOSFETs Description Product Summary The IRLML6401 is the high cell density trenched Pch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The IRLML6401 meet the RoHS and Green Product requirement with full function reliability approved. ⚫ ⚫ ⚫ ⚫ Super Low Gate Charge Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology VDS -20 V RDS(ON),max 45 mΩ ID -4.9 A SOT 23s Pin Configurations Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage ±12 V ID@TA=25℃ Continuous Drain Current, VGS @ -4.5V1 -4.9 A ID@TA=70℃ Continuous Drain Current, VGS @ -4.5V1 -3.9 A IDM Pulsed Drain Current2 -14 A PD@TA=25℃ Total Power Dissipation3 1.31 W PD@TA=70℃ Total Power Dissipation3 0.84 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA RθJA www.hs-semi.cn Typ. Max. Unit Thermal Resistance Junction-Ambient 1 --- 120 ℃/W Thermal Resistance Junction-Ambient 1 (t ≤10s) --- 95 ℃/W Ver 2.0 1 IRLML6401 P-Ch 20V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Conditions Min. Typ. Max. Unit VGS=0V , ID=-250uA -20 --- --- V Reference to 25℃ , ID=-1mA --- -0.014 --- V/℃ VGS=-4.5V , ID=-4.9A --- 40 45 VGS=-2.5V , ID=-3.4A --- 50 60 VGS=-1.8V , ID=-2A --- 65 85 -0.4 --- -1.0 V --- 3.95 --- mV/℃ VDS=-16V , VGS=0V , TJ=25℃ --- --- -1 VDS=-16V , VGS=0V , TJ=55℃ --- --- -5 VGS=VDS , ID =-250uA m △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-3A --- 12.8 --- S Qg Total Gate Charge (-4.5V) --- 10.2 14.3 --- 1.89 2.6 VDS=-15V , VGS=-4.5V , ID=-3A Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 3.1 4.3 Turn-On Delay Time --- 5.6 11.2 Td(on) uA nC Rise Time VDD=-10V , VGS=-4.5V , --- 40.8 73 Turn-Off Delay Time RG=3.3, ID=-3A --- 33.6 67 Fall Time --- 18 36 Ciss Input Capacitance --- 857 1200 Coss Output Capacitance --- 114 160 Crss Reverse Transfer Capacitance --- 108 151 Min. Typ. Max. Unit --- --- -4.9 A --- --- -14 A Tr Td(off) Tf VDS=-15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol Parameter Conditions IS Continuous Source Current1,4 ISM Pulsed Source Current2,4 VSD Diode Forward Voltage2 VGS=0V , IS=-1A , TJ=25℃ --- --- -1 V trr Reverse Recovery Time IF=-3A , di/dt=100A/µs , --- 21.8 --- nS Qrr Reverse Recovery Charge TJ=25℃ --- 6.9 --- nC VG=VD=0V , Force Current Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as I D and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 IRLML6401 P-Ch 20V Fast Switching MOSFETs Typical Characteristics 100 -ID=3A RDSON (mΩ) 80 60 40 1 2 3 -VGS (V) 4 5 Fig.2 On-Resistance vs. G-S Voltage Fig.1 Typical Output Characteristics -IS Source Current(A) 4 3 TJ=150℃ TJ=25℃ 2 1 0 0 0.2 0.4 0.6 0.8 1 -VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of Reverse Fig.4 Gate-charge Characteristics diode 1.8 Normalized On Resistance 1.8 Normalized VGS(th) 1.4 1 0.6 1.4 1.0 0.6 0.2 0.2 -50 -50 0 50 100 TJ ,Junction Temperature (℃ ) 150 Fig.5 Normalized VGS(th) vs. TJ www.hs-semi.cn 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ Ver 2.0 3 IRLML6401 P-Ch 20V Fast Switching MOSFETs 1000 100.00 Ciss 100us 10ms -ID (A) C (pF) 10.00 Coss 100 100ms 1.00 Crss 1s 0.10 DC TA=25℃ Single Pulse F=1.0MHz 10 0.01 1 5 9 13 17 21 0.1 -VDS (V) Fig.7 Capacitance 1 10 -VDS (V) 100 Fig.8 Safe Operating Area Normalized Thermal Response (R θJA) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM 0.001 TON SINGLE PULSE T D = TON/T TJpeak = TC + PDM x RθJC 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform www.hs-semi.cn Fig.11 Gate Charge Waveform Ver 2.0 4 IRLML6401 P-Ch 20V Fast Switching MOSFETs Ordering Information Part Number IRLML6401 www.hs-semi.cn Package code SOT-23 Ver 2.0 Packaging 3000/Tape&Reel 5