MEM2301XG

MEM2301 P-Channel MOSFET MEM2301X General Description Features MEM2301XG Series P-channel enhancement mode  -20V/-2.8A field-effect transistor ,produced with high cell density RDS(ON) =93mΩ@ VGS=-4.5V,ID=-2.8A DMOS trench technology, which is especially used to RDS(ON) =113mΩ@ VGS=-2.5V,ID=-2A minimize on-state resistance. This device particularly  High Density Cell Design For Ultra Low On-Resistance suits low voltage applications, and low power  Subminiature surface mount package:SOT23 dissipation, and low power dissipation in a very small outline surface mount package. Pin Configuration Typical Application  Power management  Load switch  Battery protection Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±8 V Continuous Drain Current TA=25℃ TA=70℃ Pulsed Drain Current1,2 Total Power Dissipation V6.0 ID IDM TA=25℃ TA=70℃ PD -2.8 -1.8 -10 0.7 0.45 A A W Operating Temperature Range TOpr 150 ℃ Storage Temperature Range Tstg -65/150 ℃ www.microne.com.cn 1 MEM2301 Thermal Characteristics Parameter 3 Thermal Resistance,Junction-to-Ambient Symbol MAX. Unit RθJA 145 ℃/W Max Unit Electrical Characteristics Parameter Symbol Test Condition Min Type Static Characteristics Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250μA -20 -23 Gate Threshold Voltage VGS(th) VDS= VGS, ID=-250μA -0.4 0.58 -1 V Gate-Body Leakage IGSS VDS=0V，VGS=8V 0.2 100 nA VDS=0V，VGS=-8V -0.2 -100 nA Zero Gate Voltage Drain Current IDSS VDS=-16V VGS=0V -1.5 -100 nA RDS(ON)1 VGS=-4.5V,ID=-2.8A 93 110 mΩ RDS(ON)2 VGS=-2.5V,ID=-2A 113 140 mΩ Static Drain-Source On-Resistance VDS = –5 V, ID = –2.8 A Forward Transconductance gFS Source-drain (diode forward) voltage VSD V 6.5 VGS=0V,IS=-1A S -1.2 V Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = -6V, VGS = 0 V, f = 1 MHz 500 115 pF 60 Switching Characteristics Turn-On Delay Time td(on) Rise Time tr Turn-Off Delay Time td(off) Fall-Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDD = -6 V, ID=-1 A, VGEN = -4.5 V, Rg = 6 Ω VDS = -6 V, VGS = -4.5 V, ID = -2.8A 5 25 30 60 25 60 10 60 4.0 10 0.8 ns nc 0.8 1、Pulse width limited by maximum junction temperature. 2、Pulse test: PW ≤300 us duty cycle ≤2%. 3、Surface Mounted on FR4 Board, t ≤ 5 sec. V6.0 www.microne.com.cn 2 MEM2301 Typical Performance Characteristics V6.0 www.microne.com.cn 3 MEM2301 V6.0 www.microne.com.cn 4 MEM2301 Package Information V6.0 www.microne.com.cn 5 MEM2301      V6.0 The information described herein is subject to change without notice. Nanjing Micro One Electronics Inc is not responsible for any problems caused by circuits or diagrams described herein whose related industrial properties, patents, or other rights belong to third parties. The application circuit examples explain typical applications of the products, and do not guarantee the success of any specific mass-production design. Use of the information described herein for other purposes and/or reproduction or copying without the express permission of Nanjing Micro One Electronics Inc is strictly prohibited. The products described herein cannot be used as part of any device or equipment affecting the human body, such as exercise equipment, medical equipment, security systems, gas equipment, or any apparatus installed in airplanes and other vehicles, without prior written permission of Nanjing Micro One Electronics Inc. Although Nanjing Micro One Electronics Inc exerts the greatest possible effort to ensure high quality and reliability, the failure or malfunction of semiconductor products may occur. The user of these products should therefore give thorough consideration to safety design, including redundancy, fire-prevention measures, and malfunction prevention, to prevent any accidents, fires, or community damage that may ensue. www.microne.com.cn 6