MDD14N25CRH

N-Channel MOSFET 250V, 10.2A, 0.28Ω General Description Features    These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. VDS = 250V ID = 10.2A RDS(ON) ≤ 0.28Ω @ VGS = 10V Applications These devices are suitable device for SMPS, high Speed switching and general purpose applications.    Power Supply Motor Control High Current, High Speed Switching D G S Absolute Maximum Ratings (Ta = 25oC) Characteristics Symbol Rating Unit Drain-Source Voltage VDSS 250 V Gate-Source Voltage VGSS ±30 V 10.2 A o TC=25 C Continuous Drain Current ID o TC=100 C Pulsed Drain Current(1) 6.4 A 40.8 A 69.4 W 0.56 W/ oC dv/dt 4.5 V/ns EAR 6.94 mJ IDM o TC=25 C Power Dissipation o Derivate above 25 C Peak Diode Recovery dv/dt (3) Repetitive Avalanche Energy Avalanche current (1) (1) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range PD IAR 10.2 A EAS 550 mJ TJ, Tstg -55~150 o C Thermal Characteristics Symbol Rating Thermal Resistance, Junction-to-Ambient(1) Characteristics RθJA 110 Thermal Resistance, Junction-to-Case(1) RθJC 1.8 Nov. 2011 Version 1.0 1 Unit o C/W MagnaChip Semiconductor Ltd. MDD14N25C N-channel MOSFET 250V MDD14N25C Part Number Temp. Range MDD14N25CRH o -55~150 C Package Packing RoHS Status D-pak Reel & Tape Halogen Free Electrical Characteristics (Ta =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 250 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 2.0 - 4.0 IDSS VDS = 250V, VGS = 0V - - 1 μA Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance V IGSS VGS = ±30V, VDS = 0V - - 100 nA RDS(ON) VGS = 10V, ID = 5.1 A - 0.22 0.28 Ω gfs VDS = 30V, ID = 5.1A - 8.5 - S - 20.0 - - 4.5 - Dynamic Characteristics Total Gate Charge Qg Gate-Source Charge Qgs VDS = 200V, ID = 14.0A, VGS = 10V nC Gate-Drain Charge Qgd - 8.9 - Input Capacitance Ciss - 741 - Reverse Transfer Capacitance Crss - 15 - Output Capacitance Coss - 142 - Turn-On Delay Time td(on) - 13 - tr - 42 - - 44 - - 28 - - - 10.2 - - 1.4 V - 174 - ns - 1.0 - μC Rise Time Turn-Off Delay Time Fall Time td(off) VDS = 25V, VGS = 0V, f = 1.0MHz VGS = 10V, VDS = 125V, ID = 14.0A, RG = 25Ω(3) tf pF ns Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current IS Source-Drain Diode Forward Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IS = 10.2A, VGS = 0V IF = 14.0A, dl/dt = 100A/μs(3) A Note : 1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature T J(MAX)=150°C. 3. ISD ≤10.2A, di/dt≤300A/us, VDD≤BVdss, Rg =25Ω, Starting TJ=25°C 4. L=8.5mH, IAS=10.2A, VDD=50V, Rg=26Ohm, Starting TJ=25oC Nov. 2011 Version 1.0 2 MagnaChip Semiconductor Ltd. MDD14N25C N-channel MOSFET 250V Ordering Information MDD14N25C N-channel MOSFET 250V 35 Vgs=4.0V =4.5V =5.0V =5.5V =6.0V =6.5V =7.0V =7.5V =8.0V =10.0V =15.0V =20.0V ID,Drain Current [A] 25 20 15 0.8 0.7 0.6 RDS(ON) [Ω ] 30 0.5 0.4 VGS=10.0V 10 VGS=20V 0.3 Notes 1. 250㎲ Pulse Test 2. TC=25 5 0.2 ℃ 0 0 5 10 15 -5 0 5 10 VDS,Drain-Source Voltage [V] 25 30 35 ID,Drain Current [A] 1.2 3.0 ※ Notes : ※ Notes : BVDSS, (Normalized) Drain-Source Breakdown Voltage 1. VGS = 10 V 2. ID = 5.1 A 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance 20 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 2.0 1.5 1.0 0.5 0.0 1. VGS = 0 V 2. ID = 250㎂ 1.1 1.0 0.9 0.8 -50 0 50 100 150 -50 0 o 150 Fig.4 Breakdown Voltage Variation vs. Temperature ※ Notes : * Notes ; 1. Vds=30V IDR Reverse Drain Current [A] 1. VGS = 0 V 2.250s Pulse test 10 150 ID(A) ℃ 25 ℃ -55 ℃ 1 5 6 7 8 10 150 ℃ 25 ℃ 1 0.2 9 VGS [V] 0.4 0.6 0.8 1.0 1.2 VSD, Source-Drain Voltage [V] Fig.5 Transfer Characteristics Nov. 2011 Version 1.0 100 TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature 4 50 o TJ, Junction Temperature [ C] 3 15 Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. 50V 125V VGS, Gate-Source Voltage [V] 200V 1200 8 Ciss Capacitance [pF] 1000 6 4 800 600 ※ Notes ; 400 1. VGS = 0 V 2. f = 1 MHz Crss 2 200 0 0 0 2 4 6 8 10 12 14 16 18 1 20 Fig.7 Gate Charge Characteristics 10 10 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Fig.8 Capacitance Characteristics 2 Operation in This Area is Limited by R DS(on) 10 s 10 100 s 1 ms 1 8 10 ms 100 ms ID, Drain Current [A] ID, Drain Current [A] 10 DC 10 10 0 6 4 -1 2 Single Pulse TJ=Max rated TC=25 ℃ 10 0 25 -2 10 -1 10 0 10 1 10 50 2 75 100 125 TC, Case Temperature [ ℃ 150 ] VDS, Drain-Source Voltage [V] Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs. Case Temperature 7000 D=0.5 0 10 single Pulse RthJC = 1.8 /W TC = 25 6000 ℃ ℃ 5000 Power (W) Zθ JC(t), Thermal Response 0.2 0.1 0.05 -1 10 0.02 4000 3000 2000 0.01 ※ Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC RΘ JC=1.8 /W 1000 ℃ single pulse 0 1E-5 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t1, Rectangular Pulse Duration [sec] 1E-3 0.01 0.1 1 10 Pulse Width (s) Fig.12 Single Pulse Maximum Power Dissipation Fig.11 Transient Thermal Response Curve Nov. 2011 Version 1.0 1E-4 4 MagnaChip Semiconductor Ltd. MDD14N25C N-channel MOSFET 250V Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Coss 1400 ※ Note : ID = 14A 10 MDD14N25C N-channel MOSFET 250V Physical Dimension D-PAK, 3L Dimensions are in millimeters, unless otherwise specified Nov. 2011 Version 1.0 5 MagnaChip Semiconductor Ltd. MDD14N25C N-channel MOSFET 250V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Nov. 2011 Version 1.0 6 MagnaChip Semiconductor Ltd.