ME2301

ME2301/ME2301-G P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The ME2301 is the P-Channel logic enhancement mode power field ● RDS(ON) ≦110mΩ@VGS=-4.5V effect transistors are produced using high cell density , DMOS trench ● RDS(ON) ≦150mΩ@VGS=-2.5V technology. This high density process is especially tailored to ● Super high density cell design for extremely low RDS(ON) minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook APPLICATIONS computer power management and other battery powered circuits ● Power Management in Note book where low in-line power loss are needed in a very small outline surface mount package. ● Portable Equipment ● Battery Powered System ● Load Switch ● DSC PIN CONFIGURATION (SOT-23) Top View e Ordering Information: ME2301 (Pb-free) ME2301-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Symbol Maximum Ratings Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V Parameter Continuous Drain Current * TA=25℃ TA=70℃ Pulsed Drain Current Maximum Power Dissipation ID IDM TA=25℃ TA=70℃ Operating Junction Temperature Thermal Resistance-Junction to Ambient* PD -2.7 -2.1 -11 1.3 0.8 A A W TJ -55 to 150 ℃ RθJA 100 ℃/W e * The device mounted on 1in2 FR4 board with 2 oz copper DCC 正式發行 Feb, 2012-Ver1.5 01 ME2301/ME2301-G P-Channel Enhancement Mode Mosfet Electrical Characteristics (TA =25℃ Unless Otherwise Specified) Symbol Parameter Limit Min V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=-250μA -20 VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250μA -0.4 IGSS Gate Leakage Current IDSS Zero Gate Voltage Drain Current RDS(ON) Drain-Source On-Resistance a VSD Diode Forward Voltage Typ Max Unit STATIC V -1 V VDS=0V, VGS=±8V ±100 nA VDS=-20V, VGS=0V -1 μA VGS=-4.5V, ID= -2.8A 90 110 VGS=-2.5V, ID= -2.0A 110 150 IS=-1A, VGS=0V -0.7 -1.4 mΩ V DYNAMIC Qg Total Gate Charge 5.8 Qgs Gate-Source Charge Qgd Gate-Drain Charge 1.2 Ciss Input Capacitance 510 Coss Output Capacitance Crss Reverse Transfer Capacitance 17 td(on) Turn-On Delay Time 53 tr Turn-On Rise Time VDS=-6V, RL =6Ω 32 td(off) Turn-Off Delay Time RGEN=6Ω, VGS=-4.5V 47 tf Turn-Off Fall time VDS=-6V, VGS=-4.5V, ID=-2.8A VDS=-15V, VGS=0V, f=1.0MHz nC 1.7 pF 53 ns 7 Notes: a. Pulse test: pulse width≦ 300us, duty cycle≦ 2%,Guaranteed by design, not subject to production testing. b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice. DCC 正式發行 Feb, 2012-Ver1.5 02 ME2301/ME2301-G P-Channel Enhancement Mode Mosfet Typical Characteristics (TJ =25℃ Noted) DCC 正式發行 Feb, 2012-Ver1.5 03 ME2301/ME2301-G P-Channel Enhancement Mode Mosfet Typical Characteristics (TJ =25℃ Noted) DCC 正式發行 Feb, 2012-Ver1.5 04 ME2301/ME2301-G P-Channel Enhancement Mode Mosfet SOT-23 Package Outline MILLIMETERS (mm) DIM MIN MAX A 2.800 3.00 B 1.200 1.70 C 0.900 1.30 D 0.350 0.50 G 1.780 2.04 H 0.010 0.15 J 0.085 0.20 K 0.300 0.65 L 0.890 1.02 S 2.100 3.00 V 0.450 0.60 DCC 正式發行 Feb, 2012-Ver1.5 05