PPMT30V3

PPMT30V3 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D（3） MOSFET Product Summary VDS(V) -30 RDS(on)(Ω) ID(A) 0.058 @ VGS=-10V G（1） -3 0.075@ VGS=-4.5V S（2） Electrical characteristics per line@25℃( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units - V OFF/ON CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID =-250μA,VGS=0V -30 Zero Gate Voltage Drain Current IDSS VDS =-30V,VGS=0V - - -1 μA Gate-Body Leakage Current IGSS VDS =0V,VGS=±20V - - ±100 nA Gate Threshold Voltage VGS(th) VDS =VGS, ID =-250μA -1 - -3 V Static Drain-Source On-Resistancea RDS(ON) VGS=-4.5V, ID =-2.5A - 75 95 mΩ VGS=-10V, ID =-3.2A - 58 70 mΩ - 460 pF - 74 pF - 23 pF - 33 ns - 39 ns - 17 ns - 5 ns 14 nC 6.8 nC 2.8 nC 2.3 nC Ω DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VGS=0V, VDS =-15V, f=1MHz SWITCHING PARAMETERS Turn-On Delay Time td(on) Turn-Off Delay Time td(off) Turn-On Rise Time tr Turn-On Fall Time tf Total Gate Charge Qg Total Gate Charge Qg VDS=-15V, VGS =-10V, RG=6Ω,RL=15Ω VDS=-15V, VGS =-10V, ID =-1.7A VDS=-15V, VGS =-4.5V, ID =-1.7A Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate resistance Rg VDS=0V,VGS=0V,f=1MHz 3.5 Drain-Source Diode Forward Voltage VSD VGS=0V,IS=-1.0A -0.8 Rev.06.2 1 -1.2 V www.prisemi.com P-Channel MOSFET PPMT30V3 Absolute maximum rating@25℃ Parameter Symbol Value Units Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain TA=25℃ Curren(TJ=150℃) TA=70℃ -3 ID Pulsed Drain Current IDM TA=25℃ Maximum Power Dissipation -12 Operating Junction and Storage Temperature Range Thermal Resistance-Junction to Ambient A 1.04 PD TA=70℃ A -2.5 W 0.67 TJ -55 to 150 ℃ RθJA 120 ℃/W Typical Characteristics 0.10 1.6 RDS(ON) –On-Resistance(Ω) On Resistance (Normalized) 1.8 1.4 1.2 1.0 0.08 VGS=-4.5V 0.06 VGS=-10V 0.8 0.6 -50 0 50 100 0.04 150 0 -2 -4 -6 -8 -10 -12 ID-Drain Current (A) TJ-Junction Temperature(℃) Fig 1. On Resistance vs. Junction Temperature Fig 2. On-Resistance vs. Drain Current 0.24 600 RDS(ON) –On-Resistance(Ω) C-Capacitance (pF) CISS 400 COSS 200 0.18 ID=-3.2A 0.12 0.06 CRSS 0 0 -5 -20 -15 -10 VDS-Drain-to-Source Voltage(V) -25 0.00 0 -30 -4 -6 -8 -10 VGS-Gate-to-Source Voltage (V) Fig 3. Capacitance Rev.06.2 -2 Fig 4. On-Resistance vs. Gate-to-Source Voltage 2 www.prisemi.com P-Channel MOSFET PPMT30V3 -12 -0.2 -4V -5V~-10V -10 ID –Drain Current (A) VGS(th)-Variance(V) -0.1 ID=250μA 0 0.1 0.2 -8 VGS=-3V -6 -4 -2 0.3 0 0.4 50 0 -50 100 0 150 -1.0 -10 VDS=-15V ID=-1.7A -8 IS –Source Current (A) VGS-Gate-to-Source Voltage (V) -4.0 Fig 6. On-Region Characteristics -10 -6 -4 -1 -2 TA=25℃ -0.1 0 -0 3 0 9 6 QG-Total Gate Charge(nC) 12 15 -0.2 100 -1.0 -0.8 -1.2 -1.4 50 P (PK) –Peak Transient Power (W) 10 100us 1ms 1 10ms DC 0.1 0.1 -0.6 Fig 8. On-Resistance vs. Drain Current RDS(ON) limited TA=25℃ -0.4 VSD-Source-to-Drain Voltage (V) Fig 7. Gate Charge ID-Drain Current(A) -3.0 VGS-Drain-to-Source Voltage (V) TJ-Temperature (℃) Fig 5. Threshold Voltage 1s 100ms 10s 40 30 20 10 TA=25℃ 0 10 1 VDS-Drain- Source Voltage(V) 100 1E-4 1E-3 1E-2 1E-1 1E-0 1E+1 1E+2 t1-Time (sec) Fig 9. Maximum Forward Biased Safe Operating Area Rev.06.2 -2.0 Fig 10. Single Pulse Maximum Power Dissipation 3 www.prisemi.com P-Channel MOSFET Normalized Effective Transient Thermal Impedance 1E0 PPMT30V3 70% 50% 30% 1E-1 10% Notes: 5% PDM 2% 1E-2 t1 1% t2 t1 1. Duty Cyde, D=t2 0.5% 2. Per Unit Base=RthJA=120℃/W 3.TJM-TA=PDMZthJA(t) 4.Surface Mounted 0.2% Sing Pulse Curve 1E-3 1E-5 1E-4 1E-3 1E-2 1E-1 1E0 Square Wave Pulse Duration (sec) 1E1 1E2 1E3 1E4 Fig 11.Normalized Thermal Transient Impedance, Junction-to-Ambient Product dimension(SOT-23) Rev.06.2 4 www.prisemi.com P-Channel MOSFET PPMT30V3 Millimeters Inches Dim MIN MAX MIN MAX A 2.72 3.12 0.107 0.123 B 1.10 1.50 0.043 0.059 C 2.10 2.64 0.083 0.104 D 0.95 BSC 0.037 BSC E 0.50 BSC 0.020 BSC F 1.90 BSC 0.075 BSC G 0.08 0.21 0.003 0.008 J 0.30 0.50 0.012 0.020 K 0.053 1.35 L 0.013 0.15 0.001 0.006 θ 0° 10° 0° 10° Marking information PT33 Ordering information Device Package Reel Shipping PPMT30V3 SOT-23 (Pb-Free) 7'' 3000 / Tape & Reel Load with information USER DIRECTION OF FEED 4.0±0.1 2.0±0.1 8.0±0.3 4.0±0.1 3.5±0.1 1.75±0.1 Ø1.55±0.1 Unit:mm Rev.06.2 5 www.prisemi.com P-Channel MOSFET PPMT30V3 IMPORTANT NOTICE and are registered trademarks of Prisemi Electronics Co., Ltd (Prisemi) ,Prisemi reserves the right to make changes without further notice to any products herein. Prisemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Prisemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in Prisemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Prisemi does not convey any license under its patent rights nor the rights of others. The products listed in this document are designed to be used with ordinary electronic equipment or devices, Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Website: http://www.prisemi.com For additional information, please contact your local Sales Representative. ©Copyright 2009, Prisemi Electronics is a registered trademark of Prisemi Electronics. All rights are reserved. Rev.06.2 6 www.prisemi.com