SE8841A

SE8841A Dual N-Channel Enhancement-Mode MOSFET Revision: A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET  Voltage and Current Improved Shoot-Through  On-Resistance Fully Characterized Avalanche VDS = 20V RDS(ON) = 11.5mΩ @ VGS=4.5V FOM  Simple Drive Requirement  Small Package Outline  Surface Mount Device Pin configurations See Diagram below Absolute Maximum Ratings Parameter Symbol Rating Units Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Drain Current Total Power Dissipation Continuous Pulsed @TA=25℃ Operating Junction Temperature Range ShangHai Sino-IC Microelectronic Co., Ltd. ID 6.5 25 A PD 1.5 W TJ -55 to 150 ℃ 1. SE8841A Electrical Characteristics Symbol (TJ=25℃ unless otherwise noted) Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS (Note 2) BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0 V IDSS Drain to Source Leakage Current VDS= 20V, VGS=0V IGSS Gate-Body Leakage Current VGS=12V Gate Threshold Voltage VDS= VGS, ID=250μA VGS(th) RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=6A 20 V 100 nA 1 μA V 0.55 0.7 0.95 - 11.5 15 16 22 VGS=2.5V, ID=5A mΩ DYNAMIC PARAMETERS Ciss Input Capacitance VGS=0V, VDS=10V, Coss Output Capacitance Crss Reverse Transfer Capacitance f=1MHz 900 pF 220 pF 100 pF SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge td(on) Turn-On Delay Time VGS=4.5V, VDS=10V, 10 20 ns td(off) Turn-Off Delay Time RGEN=6Ω 35 70 ns 11 25 ns 30 60 ns td(r) Turn-On Rise Time td(f) Turn-Off Fall Time VGS=4.5V, 12 VDS=10V, ID=6A ID=6A 15 nC 2.3 nC 1 nC Thermal Resistance Symbol RθJA Parameter Thermal Resistance Junction to Ambient ShangHai Sino-IC Microelectronic Co., Ltd. Typ Max Units 83 ℃/W 2. SE8841A Typical Characteristics ShangHai Sino-IC Microelectronic Co., Ltd. 3. SE8841A Typical Characteristics ShangHai Sino-IC Microelectronic Co., Ltd. 4. SE8841A Typical Characteristics ShangHai Sino-IC Microelectronic Co., Ltd. 5. SE8841A Package Outline Dimension The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd. © 2005 SINO-IC – Printed in China – All rights reserved. SHANGHAI SINO-IC MICROELECTRONICS CO., LTD Add: Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China Phone: +86-21-33932402 33932403 33932405 33933508 33933608 Fax: +86-21-33932401 Email: webmaster@sino-ic.net Website: http://www.sino-ic.net ShangHai Sino-IC Microelectronic Co., Ltd. 6.