SED3030M

SED3030M N-Channel Enhancement-Mode MOSFET Revision: A Features General Description This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of application For a single MOSFET VDS = 30V RDS(ON) = 7.4mΩ@VGS=10V   Pin configurations See Diagram below Absolute Maximum Ratings Parameter Symbol Rating Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Drain Current Total Power Dissipation Continuous Pulsed @TA=25℃ ID 30 A 80 PD 40 W Single pulse avalanche energy EAS 72 mJ Operating Junction Temperature Range TJ -55 to 175 ℃ Thermal Resistance Symbol RθJC Parameter Thermal Resistance Junction to Case ShangHai Sino-IC Microelectronics Co., Ltd. Typ Max Units - 3 ℃/W 1. SED3030M Electrical Characteristics Symbol (TJ=25℃ unless otherwise noted) Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS (Note 2) BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0 V IDSS Drain to Source Leakage Current VDS=30V, VGS=0V IGSS Gate-Body Leakage Current VGS=20V VGS(th) Gate Threshold Voltage VDS= VGS, ID=250μA 1 RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=25A - Forward Transconductance VDS=60V, ID=7.5A 26 gFS 30 V 7.4 1 μA 100 nA 1.7 V 8.5 mΩ S DYNAMIC PARAMETERS Ciss Input Capacitance VGS=0V, VDS=15V, Coss Output Capacitance Crss Reverse Transfer Capacitance f=1MHz 680 pF 102 pF 71 pF 17.5 nC 43 nC 4.1 nC SWITCHING PARAMETERS Qg Total Gate Charge 2 Qgs Gate Source Charge Qgd Gate Drain Charge td(on) Turn-On Delay Time VGS=10V, VDS=15V, 5 ns td(off) Turn-Off Delay Time RGEN=3Ω 19 ns td(r) Turn-On Rise Time ID=20A 12 ns td(f) Turn-Off Fall Time 6 ns VGS=10V, VDS=15V, ID=20A Source-Drain Diode Characteristics VSD Diode Forward Voltage IS Diode Forward Current trr Reverse Recovery Time TJ=25℃,IF=20A 19 nS Qrr Reverse Recovery Charge Di/dt=100A/μs 10 nC ton Forward Turn-On Time Intrinsic turn-on time is negligible(turn-on is dominated by LS ShangHai Sino-IC Microelectronics Co., Ltd. VGS=0V,IS=24A 1.2 V 30 A 2. SED3030M Typical Characteristics ShangHai Sino-IC Microelectronics Co., Ltd. 3. SED3030M Typical Characteristics ShangHai Sino-IC Microelectronics Co., Ltd. 4. SE3D080M Package Outline Dimension DFN3X3 EP ShangHai Sino-IC Microelectronics Co., Ltd. 5. The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd. © 2005 SINO-IC – Printed in China – All rights reserved. SHANGHAI SINO-IC MICROELECTRONICS CO., LTD Add: Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China Phone: +86-21-33932402 33932403 33932405 33933508 33933608 Fax: +86-21-33932401 Email: webmaster@sino-ic.net Website: http://www.sino-ic.net ShangHai Sino-IC Microelectronics Co., Ltd. 6.