MMBT7002

MMBT7002 N-Channel Enhancement Mode Field Effect Transistor Features • High density cell design for low RDS(ON) • Voltage controlled small signal switching • High saturation current capability • High speed switching Drain Gate 1.Gate 2.Source 3.Drain TO-236 Plastic Package Source Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Drain-Source Voltage VDSS 60 V Drain-Gate Voltage (RGS  1MΩ) VDGR 60 V VGSS ± 20 ± 40 V ID 115 800 mA Ptot 200 mW TJ, Tstg - 55 to + 150 Gate-Source Voltage -Continuous -Non Repetitive (tp < 50 µs) Maximum Drain Current -Continuous -Pulsed Total Power Dissipation Operating and Storage Temperature Range Characteristics at Ta = 25 OC Parameter Drain Source Breakdown Voltage at ID = 10 µA Zero Gate Voltage Drain Current at VDS = 60 V Gate-Body Leakage Current at VGS = ± 20 V Gate Threshold Voltage at VDS = VGS, ID = 250 µA On-State Drain Current at VGS = 10 V, VDS = 7.5 V Drain-Source On-Voltage at VGS = 10 V, ID = 500 mA at VGS = 5 V, ID = 50 mA Static Drain-Source On-Resistance at VGS = 10 V, ID = 500 mA Forward Transconductance at VDS = 10 V, ID = 200 mA Input Capacitance at VDS = 25 V, f = 1 MHz Output Capacitance at VDS = 25 V, f = 1 MHz Reverse Transfer Capacitance at VDS = 25 V, f = 1 MHz Turn-On Time at VDD = 30 V, RL= 150 Ω, ID = 0.2 A, VGS = 10V, RGEN = 25Ω Turn-Off Time at VDD = 30 V, RL= 150 Ω, ID = 0.2 A, VGS = 10V, RGEN = 25Ω C O Symbol Min. Max. Unit BVDSS 60 - V IDSS - 1 µA ±IGSS - 100 nA VGS(th) 1 2.5 V ID(ON) 500 - mA VDS(ON) - 3.75 1.5 V V RDS(ON) - 7.5 Ω gFS 80 - mS Ciss - 50 pF Coss - 25 pF Crss - 5 pF ton - 20 ns toff - 20 ns SEMTECH ELECTRONICS LTD. ® Dated: 16/03/2015 Rev:01 MMBT7002 SEMTECH ELECTRONICS LTD. ® Dated: 16/03/2015 Rev:01