HS5JHV6G

HS5A - HS5M Taiwan Semiconductor 5A, 50V - 1000V High Efficient Surface Mount Rectifier FEATURES KEY PARAMETERS ● ● ● ● ● Glass passivated junction chip Ideal for automated placement Low forward voltage drop Low profile package Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS PARAMETER VALUE UNIT IF(AV) 5 A VRRM 50 - 1000 V IFSM 150 A TJ MAX 150 °C Package DO-214AB (SMC) Configuration Single die ● High frequency rectification ● Freewheeling application ● Switching mode converters and inverters in computer, automotive and telecommunication. MECHANICAL DATA ● ● ● ● Case: DO-214AB (SMC) Molding compound meets UL 94V-0 flammability rating Part no. with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green compound (halogen-free) ● Moisture sensitivity level: level 1, per J-STD-020 ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test DO-214AB (SMC) ● Polarity: As marked ● Weight: 0.21 g (approximately) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Marking code on the device HS5A HS5B HS5D HS5F HS5G HS5J HS5K HS5M UNIT HS5A HS5B HS5D HS5F HS5G HS5J HS5K HS5M Repetitive peak reverse voltage VRRM 50 100 200 300 400 600 800 1000 V Reverse voltage, total rms value VR(RMS) 35 70 140 210 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 300 400 600 800 1000 Forward current Surge peak forward current, 8.3 ms single half sine-wave uperimposed on rated load per diode Junction temperature IF(AV) 5 A IFSM 150 A TJ - 55 to +150 °C Storage temperature TSTG - 55 to +150 °C 1 Version:J1903 HS5A - HS5M Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER Junction-to-ambient thermal resistance SYMBOL TYP UNIT RӨJA 60 °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage per diode Forward voltage per diode CONDITIONS (1) (1) HS5A HS5B HS5D HS5F HS5G HS5J HS5K HS5M HS5A HS5B HS5D HS5F HS5G HS5J HS5K HS5M Reverse current @ rated VR per diode Junction capacitance Reverse recovery time (2) HS5A HS5B HS5D HS5F HS5G HS5J HS5K HS5M HS5A HS5B HS5D HS5F HS5G HS5J HS5K HS5M IF = 3A, TJ = 25°C IF = 5A, TJ = 25°C TJ = 25°C SYMBOL VF VF IR TJ = 125°C 1 MHz, VR=4.0V IF=0.5A , IR=1.0A IRR=0.25A TYP. MAX. UNIT - - V - - V - 1.35 V - 1.00 V - 1.30 V - 1.70 V - 10 µA - 250 µA 80 - pF 50 - pF - 50 ns - 75 ns CJ trr Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms 2 Version:J1903 HS5A - HS5M Taiwan Semiconductor ORDERING INFORMATION PART NO. PART NO. SUFFIX HS5x (Note 1,2) PACKING CODE PACKING CODE SUFFIX PACKAGE PACKING R7 SMC 850 / 7" Plastic reel R6 SMC 3,000 / 13" Paper reel SMC 3,000 / 13" Plastic reel V7 Matrix SMC 850 / 7" Plastic reel V6 Matrix SMC `3,000 / 13" Plastic reel M6 H G Note : 1. "x" defines voltage from 50V (HS5A) to 1000V (HS5M) 2. Only V6 and V7 are all green compound (halogen free) EXAMPLE EXAMPLE P/N PART NO. PART NO. SUFFIX PACKING CODE PACKING CODE SUFFIX DESCRIPTION HS5AHR7G HS5A H R7 G AEC-Q101 qualified Green compound 3 Version:J1903 HS5A - HS5M Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.2 Typical Junction Capacitance 6 175 5 150 JUNCTION CAPACITANCE (pF) AVERAGE FORWARD CURRENT (A) Fig.1 Forward Current Derating Curve 4 3 2 1 RESISTIVE OR INDUCTIVE LOAD 125 100 25 75 50 HS5J - HS5M 25 f=1.0MHz Vsig=50mVp-p 0 0 0 HS5A - HS5G 50 75 100 125 0.1 150 1 AMBIENT TEMPERATURE (oC) 100 =100°C TJ 10 TJ=25°C 1 40 60 80 100 120 100 10 10 TJ=125°C HS5A - HS5D 0.1 TJ=25°C HS5G 10.01 Pulse width 0.001 0.3 0.1 0.2 140 UF1DLW 1 (A) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (μA) Fig.4 Typical Forward Characteristics 1000 20 100 REVERSE VOLTAGE (V) Fig.3 Typical Reverse Characteristics 0 10 0.4 0.4 0.5 0.6 0.6 0.7 0.8 HS5J - HS5M 0.8 0.9 1 1 1.2 1.1 1.4 FORWARD VOLTAGE (V) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 4 Version:J1903 1.2 HS5A - HS5M Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.5 Maximum Non-repetitive Forward Surge Current PEAK FORWARD SURGE CURRENT (A) 200 100 0 1 10 100 NUMBER OF CYCLES AT 60 Hz Fig.6 Reverse Recovery Time Characteristic And Test Circuit Diagram 5 Version:J1903 HS5A - HS5M Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-214AB (SMC) Unit (mm) DIM. Unit (inch) Min. Max. Min. Max. A 2.90 3.20 0.114 0.126 B 6.60 7.11 0.260 0.280 C 5.59 6.22 0.220 0.245 D 2.00 2.62 0.079 0.103 E 1.00 1.60 0.039 0.063 F 7.75 8.13 0.305 0.320 G 0.10 0.20 0.004 0.008 H 0.15 0.31 0.006 0.012 SUGGESTED PAD LAYOUT Symbol Unit (mm) Unit (inch) A 3.30 0.130 B 2.50 0.098 C 6.80 0.268 D 4.40 0.173 E 9.40 0.370 MARKING DIAGRAM Matrix SMC SMC P/N =Marking Code G =Green Compound YW =Date Code F =Factory Code 6 Version:J1903 HS5A - HS5M Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7 Version:J1903