P6503FMA

P6503FMA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 55mΩ @VGS = -10V -3.1A SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL VGS Gate-Source Voltage Continuous Drain Current TA = 25 °C UNITS ±12 V -3.1 ID TA = 70 °C Pulsed Drain Current1 -12 0.96 PD TA = 70 °C TJ, TSTG Operating Junction & Storage Temperature Range A -2.4 IDM TA = 25 °C Power Dissipation LIMITS W 0.62 -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient SYMBOL 2 TYPICAL RqJA 1 Pulse width limited by maximum junction temperature. 2 The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper. REV 1.2 1 MAXIMUM UNITS 130 °C / W 2016/1/22 P6503FMA P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX -0.9 -1.2 UNITS STATIC V(BR)DSS VGS = 0V, ID = -250mA -30 VGS(th) VDS = VGS, ID = -250mA -0.45 Gate-Body Leakage IGSS VDS = 0V, VGS = ±12V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = -24V, VGS = 0V -1 VDS = -20V, VGS = 0V , TJ = 55 °C -10 mA Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance1 Forward Transconductance RDS(ON) 1 VGS = -2.5V, ID = -1A 68 80 VGS = -4.5V, ID = -3.1A 59 65 VGS = -10V, ID = -3.1A 43 55 VDS = -5V, ID = -2.9A 11 gfs V mΩ S DYNAMIC Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge 2 Qg Gate-Source Charge Gate-Drain Charge 2 Qgs Qgd Turn-On Delay Time Rise Time 2 2 903 VGS = 0V, VDS = -15V, f = 1MHz 62 VDS = -15V,VGS =-4.5V, ID= -3.1A td(on) 2 Turn-Off Delay Time Fall Time2 VDD = -15V,ID @ -3.1A, VGS= -4.5V, RG = 6Ω td(off) nC 1.5 2.6 100 nS 24 tf 10 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 °C ) IS Continuous Current 1 Forward Voltage Reverse Recovery Time VSD Reverse Recovery Change Qrr trr IF = -3.1A, VGS = 0V IF = -3.1A, dlF/dt = 100A /mS 1 Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2 Independent of operating temperature. REV 1.2 9.3 39 tr 2 pF 79 2 -0.9 A -1.1 V 11.7 nS 3.6 nC 2016/1/22 P6503FMA P-Channel Enhancement Mode MOSFET REV 1.2 3 2016/1/22 P6503FMA P-Channel Enhancement Mode MOSFET REV 1.2 4 2016/1/22 P6503FMA P-Channel Enhancement Mode MOSFET REV 1.2 5 2016/1/22 P6503FMA P-Channel Enhancement Mode MOSFET A. Marking Information ( 此产品代码为：2K ) B. Tape&Reel Information:3000pcs/Reel 1.55 ∮0.05 2.0 ∮0.05 13.5 MAX 3.50 ∮ 0.05 8.00∮0.3 FEED DIRECTION 8 MAX 1.0 ∮ 0.25 1.4max 4.00∮0.1 9.0∮0.3 1 ψ6 ψ60 1 16 0 180 ∮1 ψ 11.4 ∮1 REV 1.2 6 2016/1/22 P6503FMA P-Channel Enhancement Mode MOSFET REV 1.2 7 2016/1/22 P6503FMA P-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.2 8 2016/1/22