TPM7002DFN3

TPM7002DFN3 60V N-Channel Mosfet www.sot23.com.tw Product Summary ● VDS ● ID ● RDS(ON)( at VGS=10V) ● RDS(ON)( at VGS=4.5V) Application 60V 340mA ＜2.5ohm ＜3.0ohm    Load/Power Switching Interfacing Switching Battery Management for Ultra Small Portable Electronics Logic Level Shift  Package and Pin Configuration BL IC Circuit diagram D G PU S CH DFN1006-3L TE Absolute Maximum Ratings (TA=25°C unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 0.32 A Pulsed Drain Current IDM 1 A Power Dissipation PD 0.5 W RθJA 258 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~ +150 ℃ Thermal Resistance from Junction to Ambient 1 WWW.TECHPUBLIC.COM.TW TPM7002DFN3 60V N-Channel Mosfet www.sot23.com.tw Electrical Characteristics ( TA = 25°C unless otherwise noted ) Parameter Symbol Conditions Min Typ Max Units Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250μA 60 Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V 1 μA IGSS1 VGS= ±20V, VDS=0V ±100 nA IGSS2 VGS= ±10V, VDS=0V ±50 nA Gate Threshold Voltage VGS(th) VDS= VGS, ID=250μA 1.5 2.5 V VGS= 10V, ID=-300mA 1.2 2.5 Static Drain-Source On-Resistance RDS(ON) VGS= 4.5V, ID=200mA 1.3 3.0 Static Parameter V Gate-Body Leakage Current PU Ciss Output Capacitance CH Input Capacitance Coss Turn-on Delay Time VDS=30V,VGS=0V,f=1MHZ Crss TE Reverse Transfer Capacitance Total Gate Charge IS=300mA,VGS=0V IS Dynamic Parameters Switching Parameters IC VSD Maximum Body-Diode Continuous Current Ω BL Diode Forward Voltage 1 Qg Reverse recovery Time 340 mA 10 pF 5.5 VGS=10V,VDS=30V,ID=0.3A 1.7 2.4 nC 5 tD(on) tD(off) trr V 16 VGS=10V,VDD=30V, ID=300mA, RGEN=6Ω Turn-off Delay Time 1.2 ns 17 VGS=0V,IS=300mA,VR=25V, dIS/dt=100A/μs 30 ns A. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%. B. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. 2 WWW.TECHPUBLIC.COM.TW TPM7002DFN3 60V N-Channel Mosfet www.sot23.com.tw DFN1006 3L Package Outline Drawing b1 e D b E E1 L1 L A C IC A1 DIMENSIONS SYM NOM A 0.45 0.50 A1 0.00 0.02 b 0.45 0.50 b1 0.10 0.15 C 0.12 0.15 D 0.95 CH e 1.00 MIN NOM MAX 0.55 0.018 0.020 0.022 0.05 0.000 0.001 0.002 0.55 0.018 0.020 0.022 0.20 0.004 0.006 0.008 0.18 0.005 0.006 0.007 1.05 0.037 0.039 0.041 0.65 BSC 0.55 0.60 TE E E1 L L1 INCHES MAX PU MIN BL MILLIMETERS 0.026 BSC 0.65 0.022 0.024 0.026 0.15 0.20 0.25 0.006 0.008 0.010 0.20 0.25 0.30 0.008 0.010 0.012 0.05 REF 0.0002 REF Suggested Land Pattern Y1 Y2 SYM Z Y3 X C 3 DIMENSIONS MILLIMETERS INCHES C 0.25 0.010 X 0.65 0.024 Y1 0.50 0.020 Y2 0.50 0.020 Y3 0.25 0.010 Z 0.20 0.008 WWW.TECHPUBLIC.COM.TW