PMPB55XNEA
30 V, N-channel Trench MOSFET
29 March 2017
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
•
•
•
•
•
•
Extended temperature range Tj = 175 °C
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Tin-plated 100% solderable side pads for optical solder inspection
ElectroStatic Discharge (ESD) protection > 1.5 kV HBM
Trench MOSFET technology
AEC-Q101 qualified
3. Applications
•
•
•
•
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-
30
V
VGS
gate-source voltage
-12
-
12
V
ID
drain current
-
-
3.8
A
-
55
72
mΩ
VGS = 4.5 V; Tamb = 25 °C
[1]
Static characteristics
RDSon
[1]
drain-source on-state
resistance
VGS = 4.5 V; ID = 3.8 A; Tj = 25 °C
2
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm .
PMPB55XNEA
Nexperia
30 V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
D
drain
2
D
drain
3
G
gate
Simplified outline
1
Graphic symbol
7
2
5
G
3
4
4
S
source
5
D
drain
Transparent top view
DFN2020MD-6 (SOT1220)
6
D
drain
7
D
drain
8
S
source
D
6
8
S
017aaa255
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMPB55XNEA
Description
Version
DFN2020MD-6 DFN2020MD-6: plastic thermal enhanced ultra thin small outline SOT1220
package; no leads; 6 terminals
7. Marking
Table 4. Marking codes
Type number
Marking code
PMPB55XNEA
3Q
PMPB55XNEA
Product data sheet
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Nexperia
30 V, N-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
30
V
VGS
gate-source voltage
-12
12
V
ID
drain current
VGS = 4.5 V; Tamb = 25 °C
[1]
-
3.8
A
VGS = 4.5 V; Tamb = 100 °C
[1]
-
2.4
A
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
-
16
A
EDS(AL)S
non-repetitive drainsource avalanche
energy
Tj(init) = 25 °C; ID = 0.3 A; DUT in
avalanche (unclamped)
-
6.2
mJ
Ptot
total power dissipation
Tamb = 25 °C
[2]
-
550
mW
[1]
-
1.95
W
-
10
W
Tsp = 25 °C
Tj
junction temperature
-55
175
°C
Tamb
ambient temperature
-55
175
°C
Tstg
storage temperature
-65
175
°C
Source-drain diode
IS
source current
Tamb = 25 °C
[1]
-
1.9
A
HBM
[3]
-
1500
V
ESD maximum rating
VESD
[1]
[2]
[3]
electrostatic discharge
voltage
2
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm .
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint.
Measures between all pins.
PMPB55XNEA
Product data sheet
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PMPB55XNEA
Nexperia
30 V, N-channel Trench MOSFET
aaa-026120
120
aaa-026121
120
Pder
(%)
Ider
(%)
80
80
40
40
0
-75
Fig. 1.
25
125
Tj (°C)
0
-75
225
Fig. 2.
Normalized total power dissipation as a
function of junction temperature
25
125
Tj (°C)
225
Normalized continuous drain current as a
function of junction temperature
aaa-026134
102
ID
(A)
Limit RDSon = VDS/ID
tp = 10 µs
10
100 µs
1
1 ms
10 ms
DC; Tsp = 25 °C
10-1
10-2
10-1
Fig. 3.
100 ms
DC; Tamb = 25 °C; 6 cm2
1
10
102
VDS (V)
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
[1]
thermal resistance
from junction to solder
point
Min
Typ
Max
Unit
[1]
-
236
272
K/W
[2]
-
67
77
K/W
-
12
15
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
PMPB55XNEA
Product data sheet
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PMPB55XNEA
Nexperia
30 V, N-channel Trench MOSFET
[2]
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .
aaa-026122
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.50
0.33
0.25
0.20
0.10
0.05
10
0.02
0.01
0
1
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
102
aaa-026123
duty cycle = 1
0.75
Zth(j-a)
(K/W)
0.50
0.25
0.33
0.20
0.10
10
0.05
0.02
0.01
0
1
10-3
10-2
10-1
FR4 PCB, mounting pad for drain 6 cm
Fig. 5.
1
10
102
tp (s)
2
103
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMPB55XNEA
Product data sheet
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30 V, N-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
30
-
-
V
VGSth
gate-source threshold
voltage
ID = 250 µA; VDS=VGS; Tj = 25 °C
0.75
1
1.25
V
IDSS
drain leakage current
VDS = 30 V; VGS = 0 V; Tj = 25 °C
-
-
1
µA
IGSS
gate leakage current
VGS = 12 V; VDS = 0 V; Tj = 25 °C
-
-
10
µA
VGS = -12 V; VDS = 0 V; Tj = 25 °C
-
-
-10
µA
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C
-
-
2
µA
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C
-
-
-2
µA
VGS = 4.5 V; ID = 3.8 A; Tj = 25 °C
-
55
72
mΩ
VGS = 4.5 V; ID = 3.8 A; Tj = 175 °C
-
102
133
mΩ
VGS = 2.5 V; ID = 3.1 A; Tj = 25 °C
-
77
110
mΩ
RDSon
drain-source on-state
resistance
gfs
forward
transconductance
VDS = 10 V; ID = 3.8 A; Tj = 25 °C
-
20
-
S
RG
gate resistance
f = 1 MHz
-
10.8
-
Ω
VDS = 15 V; ID = 3.6 A; VGS = 4.5 V;
Tj = 25 °C
-
3
5
nC
-
0.5
-
nC
-
0.9
-
nC
-
255
-
pF
-
31
-
pF
-
23
-
pF
-
7
-
ns
-
20
-
ns
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
-
18
-
ns
tf
fall time
-
8
-
ns
VDS = 15 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
VDS = 15 V; ID = 3.6 A; VGS = 4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
Source-drain diode
VSD
source-drain voltage
IS = 1.9 A; VGS = 0 V; Tj = 25 °C
-
0.8
1.2
V
trr
reverse recovery time
-
12.6
-
ns
Qr
recovered charge
IS = 2.5 A; dIS/dt = -100 A/µs;
VGS = 0 V; VDS = 10 V; Tj = 25 °C
-
4
-
nC
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Product data sheet
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Nexperia
30 V, N-channel Trench MOSFET
aaa-026124
16
3.0 V
4.5 V
ID
(A)
aaa-022454
10-3
ID
(A)
2.6 V
12
10-4
min
2.2 V
8
2.0 V
4
0
Fig. 6.
typ
10-5
VGS = 1.8 V
0
1
2
3
VDS (V)
10-6
4
0
0.5
1.0
1.5
Tj = 25 °C; VDS = 5 V
Output characteristics: drain current as a
Fig. 7.
function of drain-source voltage; typical values
Subthreshold drain current as a function of
gate-source voltage
aaa-026125
aaa-026126
400
2.0 V
1.8 V
RDSon
(mΩ)
RDSon
(mΩ)
300
300
2.6 V
200
200
3.0 V
Tj = 175 °C
100
100
VGS = 4.5 V
0
4
8
12
ID (A)
Tj = 25 °C
0
16
Tj = 25 °C
Fig. 8.
VGS (V)
Tj = 25 °C
400
0
max
Product data sheet
2
4
6
8
10
VGS (V)
ID = 3.6 A
Drain-source on-state resistance as a function
of gate-source voltage; typical values
PMPB55XNEA
0
Fig. 9.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
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PMPB55XNEA
Nexperia
30 V, N-channel Trench MOSFET
aaa-026127
16
Tj = 175 °C
ID
(A)
12
a
1.5
Tj = 25 °C
8
1.0
4
0.5
0
0
1
2
aaa-026128
2.0
3
VGS (V)
0
-60
4
0
60
120
Tj (°C)
180
VDS > ID x RDSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
aaa-026129
2.0
aaa-026130
103
VGS(th)
(V)
C
(pF)
1.5
Ciss
max
1.0
102
typ
min
0.5
Coss
Crss
0
-60
0
60
120
Tj (°C)
10
10-1
180
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
Product data sheet
10
VDS (V)
102
f = 1 MHz; VGS = 0 V
ID = 250 μA; VDS = VGS
PMPB55XNEA
1
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
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PMPB55XNEA
Nexperia
30 V, N-channel Trench MOSFET
aaa-026131
5.0
VDS
VGS
(V)
ID
4.0
VGS(pl)
3.0
VGS(th)
VGS
2.0
QGS1
1.0
0
QGS2
0
1
2
3
QG (nC)
QGS
QGD
QG(tot)
003aaa508
Fig. 15. Gate charge waveform definitions
4
VDS = 15 V; ID = 3.6 A; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
aaa-026132
8.0
IS
(A)
175 °C
6.0
4.0
25 °C
2.0
0
0
0.4
0.8
VSD (V)
1.2
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
PMPB55XNEA
Product data sheet
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30 V, N-channel Trench MOSFET
11. Test information
P
t2
duty cycle δ =
t1
t2
t1
t
006aaa812
Fig. 17. Duty cycle definition
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
PMPB55XNEA
Product data sheet
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30 V, N-channel Trench MOSFET
12. Package outline
DFN2020MD-6: plastic thermal enhanced ultra thin small outline package; no leads;
6 terminals; body 2 x 2 x 0.65 mm
SOT1220
(8×)
pin 1
index area
B
E
A
X
D
A
A1
detail X
solderable lead
end protrusion
max. 0.02 mm (6×)
C
Lp
E2
J1
D2 3
4
2
5
e
J
D1
bp (6×)
e
1
v
E1
0
2 mm
scale
Dimensions (mm are the original dimensions)
Unit
A
A1
bp
min
0.25
nom
max 0.65 0.04 0.35
D
D1
D2
E
E1
E2
1.9
1.0
0.2
1.9
1.1
0.51
2.1
1.2
0.3
2.1
1.3
0.61
e
J
J1
0.65 0.27 0.64
Lp
0.2
0.3
v
y
y1
0.1
0.05
0.1
Note
1. Dimension A is including plating thickness.
Outline
version
A B
6
pin 1
index area
mm
y
y1 C
sot1220_po
References
IEC
JEDEC
JEITA
European
projection
Issue date
12-04-23
12-04-30
SOT1220
Fig. 18. Package outline DFN2020MD-6 (SOT1220)
PMPB55XNEA
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30 V, N-channel Trench MOSFET
13. Soldering
Footprint information for reflow soldering of DFN2020MD-6 package
0.33 (6×)
SOT1220
0.76
0.43 (6×)
0.66
0.53 (6×)
0.56
0.25 0.35 0.45
0.775
0.65
2.06
0.285
1.25
1.35
0.35 (6×)
1.05
0.25 (6×)
0.65
0.45 (6×)
0.9
1.1
1.2
0.935
0.935
2.5
solder land
solder land plus solder paste
solder paste deposit
solder resist
occupied area
Dimensions in mm
sot1220_fr
Fig. 19. Reflow soldering footprint for DFN2020MD-6 (SOT1220)
PMPB55XNEA
Product data sheet
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30 V, N-channel Trench MOSFET
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMPB55XNEA v.2
20170329
Product data sheet
-
PMPB55XNEA v.1
-
-
Modifications>
PMPB55XNEA v.1
PMPB55XNEA
Product data sheet
•
Marking code corrected
20170222
Product data sheet
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Nexperia
30 V, N-channel Trench MOSFET
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Nexperia.
15. Legal information
Right to make changes — Nexperia reserves the right to make changes
to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Data sheet status
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Suitability for use in automotive applications — This Nexperia product
has been qualified for use in automotive applications. Unless otherwise
agreed in writing, the product is not designed, authorized or warranted to
be suitable for use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction of an Nexperia
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Definition
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nexperia.com.
Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to the accuracy
or completeness of information included herein and shall have no liability for
the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be
valid in which the Nexperia product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
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Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
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Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
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and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
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customer’s applications and products using Nexperia products in order to
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liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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sold subject to the general terms and conditions of commercial sale, as
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trademarks are the property of their respective owners.
PMPB55XNEA
Product data sheet
Trademarks
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30 V, N-channel Trench MOSFET
16. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 4
10. Characteristics............................................................ 6
11. Test information....................................................... 10
12. Package outline........................................................ 11
13. Soldering................................................................... 12
14. Revision history........................................................13
15. Legal information..................................................... 14
©
Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 29 March 2017
PMPB55XNEA
Product data sheet
All information provided in this document is subject to legal disclaimers.
29 March 2017
©
Nexperia B.V. 2017. All rights reserved
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