PTD15N10

PTD15N10 100 V/15A N-Channel Advanced Power MOSFET Features V DS 100 V  N-Channel，5V Logic Level Control R DS(on),typ@VGS=10V 78 mΩ  Enhancement mode R DS(on),typ@VGS=4.5V 82 mΩ ID 15 A  Very low on-resistance @ VGS=4.5 V  Fast Switching  100% Avalanche test  Pb-free lead plating; RoHS compliant To-252 Maximum ratings, at T j=25 °C, unless otherwise specified Symbol V(BR)DSS VGS ID Parameter Rating Unit 100 V ±20 V TC =25°C 15 A TC =70°C 9.6 A Drain-Source breakdown voltage Gate-Source voltage Continuous drain current@VGS=10V IDM Pulse drain current tested ① TC =25°C 40 A PD Maximum power dissipation TC =25°C 30 W IS Diode Continuous Forward Current TC =25°C 15 A IAS Avalanche Current Max L=0.5mH 11 A 9 mJ -55 to 175 °C EAS Avalanche energy, single pulsed ② TSTG , TJ Storage and operating temperature range Thermal characteristics R JA Thermal Resistance Junction-Ambient 60 °C/W R JC Thermal Resistance-Junction to Case 5 °C/W - 1- 2015-3-26 PTD15N10 100 V/15A N-Channel Advanced Power MOSFET Typical Electrical Characteristics Symbol Parameter Condition Min. Typ. Max. Unit Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated) Drain-Source Breakdown Voltage VGS=0V ID=250μA 100 -- -- V Zero Gate Voltage Drain Current(Tc=25℃) VDS=100V,VGS=0V -- -- 1 μA Zero Gate Voltage Drain Current(Tc=125℃) VDS=100V,VGS=0V -- -- 100 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(TH) Gate Threshold Voltage VDS=VGS,ID=250μA 1.0 2.0 3.0 V RDS(ON) Drain-Source On-State Resistance③ VGS=10V, ID=10A -- 78 90 mΩ RDS(ON) Drain-Source On-State Resistance③ VGS=4.5V, ID=5A -- 82 100 mΩ -- 525 -- pF V(BR)DSS IDSS Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated) Ciss Input Capacitance Coss Output Capacitance VDS=30V,VGS=0V, -- 41 -- pF Crss Reverse Transfer Capacitance f=1MHz -- 36 -- pF Rg Gate Resistance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge 2.6 VDS=50V,ID=3A, VGS=10V Ω -- 15.6 -- nC -- 3.2 -- nC -- 4.4 -- nC -- 8 -- nS Switching Characteristics t d(on) Turn-on Delay Time tr Turn-on Rise Time ID=1A, -- 4.5 -- nS t d(off) Turn-Off Delay Time RG=6.8Ω, -- 26 -- nS tf Turn-Off Fall Time -- 3.8 -- nS VDD=50V, VGS=4.5V Source- Drain Diode Characteristics@ TJ = 25°C (unless otherwise stated) VSD Forward on voltage t rr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=10A,VGS=0V -- 0.89 1.20 V Tj=25℃,Isd=10A, -- 26 -- nS VGS=0V di/dt=500A/μs 115 nC NOTE: ① Repetitive rating; pulse width limited by max. junction temperature ② Limited by TJmax, starting TJ = 25°C, L = 0.5mH,RG = 25Ω, IAS = 6A, VGS =10V. Part not recommended for use above this value. ③ Pulse width ≤ 300μs; duty cycle≤ 2%. - 2- 2015-3-26 PTD15N10 100 V/15A N-Channel Advanced Power MOSFET ID, Drain-Source Current (A) VGS(TH), Gate -Source Voltage (V) Typical Characteristics Fig1. Typical Output Characteristics Fig2. VGS(TH) Gate -Source Voltage Vs.Tj Normalized On Resistance Tj - Junction Temperature (°C) ID, Drain-Source Current (A) VDS, Drain -Source Voltage (V) Fig3. Typical Transfer Characteristics Fig4. Normalized On-Resistance Vs. Tj ID - Drain Current (A) Tj - Junction Temperature (°C) ISD, Reverse Drain Current (A) VGS, Gate -Source Voltage (V) VSD, Source-Drain Voltage (V) VDS, Drain -Source Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage Fig6. Maximum Safe Operating Area - 3- 2015-3-26 PTD15N10 100 V/15A N-Channel Advanced Power MOSFET C, Capacitance (pF) VGS, Gate-Source Voltage (V) Typical Characteristics VDS, Drain-Source Voltage (V) Qg, Total Gate Charge (nC) Fig8. Typical Gate Charge Vs. Gate-Source Voltage Thermal Resistance ZqJA Normalized Transient Fig7. Typical Capacitance Vs. Drain-Source Voltage Pulse Width (s) Fig9. Normalized Maximum Transient Thermal Impedance Fig10. Unclamped Inductive Test Circuit and waveforms Fig11. Switching Time Test Circuit and waveforms - 4- 2015-3-26