HYG072N10LS1C2

HYG072N10LS1C2 Single N-Channel Enhancement Mode MOSFET Feature  Pin Description D D D D D D D D 100V/80A RDS(ON)= 6.0 mΩ (typ.) @ VGS = 10V RDS(ON)= 8.8 mΩ (typ.) @ VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halogen- Free Devices Available S S S G (RoHS Compliant) Pin1 G S S S PPAK5*6-8L Applications  High Frequency Point-of-Load Synchronous Buck Converter  Power Tool Application  Networking DC-DC Power System Single N-Channel MOSFET Ordering and Marking Information Package Code C2 C2: PPAK5*6-8L G072N10 Date Code XYMXXXXXX XYMXXXXXX Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermiNation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr -oduct and/or to this document at any time without notice. www.hymexa.com 1 V1.0 HYG072N10LS1C2 Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (Tc=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage +20 / -12 V 175 °C -55 to 175 °C Tc=25°C 80 A Tc=25°C 280 A Tc=25°C 80 A Tc=100°C 56.6 A Tc=25°C 75 W Tc=100°C 37.5 W TJ TSTG IS Maximum Junction Temperature Storage Temperature Range Source Current-Continuous(Body Diode) Mounted on Large Heat Sink Note: IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RJC Thermal Resistance, Junction-to-Case 2 °C/W RJA Thermal Resistance, Junction-to-Ambient ** 50 °C/W EAS SinglePulsed-Avalanche Energy *** 207 mJ L=0.3mH * Repetitive rating；pulse width limited by max.junction temperature. ** Surface mounted on FR-4 board. *** Limited by TJmax , starting TJ=25°C, L = 0.3mH, VDS =80V., VGS =10V. Electrical Characteristics(Tc =25°C Unless Otherwise Noted) Symbol Parameter Test Conditions HYG072N10LS1 Unit Min Typ. Max VGS=0V,IDS=250μA 100 - - V VDS=100V,VGS=0V - - 1 μA - - 50 μA 1.0 1.6 3.0 V Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current VGS(th) IGSS RDS(ON)* TJ=100°C Gate Threshold Voltage VDS=VGS, IDS=250μA Gate-Source Leakage Current VGS=20V,VDS=0V - - 100 nA VGS=10V,IDS=20A - 6.0 7.5 mΩ VGS=4.5V,IDS=20A - 8.8 11 mΩ ISD=20A,VGS=0V - 0.8 1.3 V - 40.6 - ns - 44.1 - nC Drain-Source On-State Resistance Diode Characteristics VSD* Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge www.hymexa.com ISD=20A,dISD/dt=100A/μs 2 V1.0 HYG072N10LS1C2 Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted) Symbol Parameter Test Conditions HYG072N10LS1 Min Typ. Max Unit Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 2.0 - Ciss Input Capacitance VGS=0V, - 2980 - Coss Output Capacitance VDS=50V, - 497 - Crss Reverse Transfer Capacitance Frequency=1.0MHz - 23 - td(ON) Turn-on Delay Time - 13.4 - Tr Turn-on Rise Time VDD=50V,RG=4Ω, - 19.6 - td(OFF) Turn-off Delay Time IDS=20A,VGS=10V - 48.6 - - 49.4 - - 56 - Tf Turn-off Fall Time Gate Charge Ω pF ns Characteristics Qg（10V） Total Gate Charge Qg（4.5V） Total Gate Charge VDS =50V, VGS=10V, - 30 - Qgs Gate-Source Charge ID=20A - 11 - Qgd Gate-Drain Charge - 15 - nC Note: *Pulse test，pulse width ≤ 300us，duty cycle ≤ 2% www.hymexa.com 3 V1.0 HYG072N10LS1C2 Typical Operating Characteristics Figure 2: Drain Current ID-Drain Current(A) Power Dissipation (w) Figure 1: Power Dissipation Tc-Case Temperature(℃) Tc-Case Temperature(℃) Zθjc ID-Drain Current(A) Thermal Impedance Figure 4: Thermal Transient Impedance Normalized Transient Figure 3: Safe Operation Area Maximum Effective Transient Thermal Impedance, Junction-to-Case VDS-Drain-Source Voltage(V) Figure 6: Drain-Source On Resistance ID-Drain Current(A) RDS(ON)-ON-Resistance(mΩ) Figure 5: Output Characteristics VDS-Drain-Source Voltage (V) www.hymexa.com ID-Drain Current(A) 4 V1.0 HYG072N10LS1C2 Typical Operating Characteristics(Cont.) Figure 8: Source-Drain Diode Forward IS-Source Current (A) Normalized On-Resistance Figure 7: On-Resistance vs. Temperature Tj-Junction Temperature (℃) VSD-Source-Drain Voltage(V) Figure 10: Gate Charge Characteristics C-Capacitance(F) VGS-Gate-Source Voltage (V) Figure 9: Capacitance Characteristics VDS-Drain-Source Voltage (V) www.hymexa.com QG-Gate Charge (nC) 5 V1.0 HYG072N10LS1C2 Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Gate Charge Test Circuit and Waveforms www.hymexa.com 6 V1.0 HYG072N10LS1C2 Device Per Unit Package Type Unit Quantity PPAK5*6-8L Reel 5000 Package Information PPAK5*6-8L www.hymexa.com 7 V1.0 HYG072N10LS1C2 Classification Profile Classification Reflow Profiles Profile Feature Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts) Average ramp-up rate (Tsmaxto TP) Liquidous temperature (TL) Time at liquidous (tL) Peak package body Temperature (Tp)* Time (tP)** within 5°C of the specified classification temperature (Tc) Average ramp-down rate (Tpto Tsmax) Time 25°C to peak temperature Sn-Pb Eutectic Assembly Pb-Free Assembly 100 °C 150 °C 150 °C 200 °C 60-120 seconds 60-120 seconds 3 °C/second max. 3°C/second max. 183 °C 217 °C 60-150 seconds 60-150 seconds See Classification Temp in table 1 SeeClassification Tempin table 2 20** seconds 30** seconds 6 °C/second max. 6 °C/second max. 6 minutes max. 8 minutes max. *Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. www.hymexa.com 8 V1.0 HYG072N10LS1C2 Table 1.SnPb Eutectic Process – Classification Temperatures (Tc) Package Volume mm³ Volume mm³ Thickness