AO3423A

UMW R UMW AO3423A SOT-23-3L Plastic-Encapsulate MOSFETS AO3423A P-Channel 20-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID -20 V 120mΩ@-4.5V 150mΩ@-2.5V -2A FEATURE ※ TrenchFET Power MOSFET ※ ESD Protected 2.0KV MARKING APPLICATION ※ Load Switch for Portable Devices ※ DC/DC Converter Equivalent Circuit SOT–23 1. GATE 2. SOURCE 3. DRAIN Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±12 ID -2 Pulsed Diode Curren IDM -18 Power Dissipation PD 1.4 W RθJA 125 ℃/W TJ 150 TSTG -55~+150 Continuous Drain Current Thermal Resistance from Junction to Ambient (t≤5s) Operating Junction Storage Temperature www.umw-ic.com 1 Unit V A ℃ 友台半导体有限公司 UMW R UMW AO3423A SOT-23-3L Plastic-Encapsulate MOSFETS MOSFET ELECTRICAL CHARACTERISTICS Static Electrical Characteristics (Ta = 25 ℃ Unless Otherwise Noted) Parameter Symbol Test Condition Min V(BR)DSS VGS = 0V, ID = -250µA -20 VGS(th) VDS =VGS, ID = -250µA -0.4 Gate-source leakage IGSS Zero gate voltage drain current IDSS Typ Max Unit Static Drain-source breakdown voltage Gate-source threshold voltage Drain-source on-state resistancea Forward transconductancea Diode forward voltage V -1 V VDS =0V, VGS = ±12V ±10 µA VDS = -20V, VGS =0V -1 µA VGS = -4.5V, ID = -2.5A 59 120 mΩ VGS = -2.5V, ID = -2A 72 150 mΩ gfs VDS = -4.5V, ID = -2.5A 7 VSD IS=-1A,VGS=0V -0.8 RDS(on) S -1.2 V Dynamic Input capacitance Ciss 325 pF Output capacitance Coss 63 pF Reverse transfer capacitanceb Crss 37 pF Total gate charge Qg 3.2 nC Gate-source charge Qgs 0.6 nC Gate-drain charge Qgd 0.9 nC 11.2 Ω 11 ns 5.5 ns 22 ns 8 ns Gate resistance VDS = -4.5V,VGS =0V, f=1MHz VDS = -10V,VGS = -4.5V, ID = --2A Rg f=1MHz Switchingb Turn-on delay time Rise time Turn-off delay time td(on) tr td(off) VDD= -10V RL=3Ω, ID ≈ -1A, VGEN=- 4.5V,Rg=3Ω Fall time tf Body Diode Reverse Recovery Time trr If=-2A, dl/dt=100A/us ns Body Diode Reverse Recovery Charge grr If=-2A, dl/dt=100A/us nC Note : 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t < 5 sec. 3. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.umw-ic.com 2 友台半导体有限公司 UMW R UMW AO3423A SOT-23-3L Plastic-Encapsulate MOSFETS www.umw-ic.com 3 友台半导体有限公司