SIT8918BA-23-33N-100.00000G

SiT8918B High Temperature Oscillator Features ◼ ◼ ◼ ◼ ◼ ◼ ◼ ◼ ◼ ◼ Applications Frequencies between 1 MHz and 110 MHz accurate to 6 decimal places Operating temperature from -40°C to 125°C. For -55°C option, refer to SiT8920 and SiT8921 ◼ ◼ Supply voltage of 1.8 V or 2.5 V to 3.3 V Excellent total frequency stability as low as ±20 ppm Low power consumption of 3.5 mA typical at 1.8 V LVCMOS/LVTTL compatible output Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm x mm Instant samples with Time Machine II and field programmable oscillators RoHS and REACH compliant, Pb-free, Halogen-free and Antimony-free For AEC-Q100 oscillators, refer to SiT8924 and SiT8925 Industrial, medical, non AEC-Q100 automotive, avionics and other high temperature applications Industrial sensors, PLC, motor servo, outdoor networking equipment, medical video cam, asset tracking systems, etc. Electrical Specifications Table 1. Electrical Characteristics All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise stated. Typical values are at 25°C and nominal supply voltage. Parameters Symbol Min. Typ. Max. Unit Condition Frequency Range Output Frequency Range – f 1 110 MHz F_stab -20 – +20 ppm -25 – +25 ppm -30 – +30 ppm -50 – +50 ppm Refer to Table 13 for the exact list of supported frequencies list of supported frequencies. Frequency Stability and Aging Frequency Stability Inclusive of Initial tolerance at 25°C, 1st year aging at 25°C, and variations over operating temperature, rated power supply voltage and load (15 pF ±10%). Operating Temperature Range Operating Temperature Range (ambient) T_use -40 – +105 °C Extended Industrial -40 – +125 °C Automotive Supply Voltage and Current Consumption Supply Voltage Current Consumption OE Disable Current Standby Current Rev 1.03 Vdd Idd I_od I_std 1.62 1.8 1.98 V 2.25 2.5 2.75 V 2.52 2.8 3.08 V 2.7 3.0 3.3 V 2.97 3.3 3.63 V 2.25 – 3.63 V – 3.8 4.7 mA No load condition, f = 20 MHz, Vdd = 2.8 V, 3.0 V or 3.3 V – 3.6 4.5 mA No load condition, f = 20 MHz, Vdd = 2.5 V – 3.5 4.5 mA No load condition, f = 20 MHz, Vdd = 1.8 V – – 4.5 mA Vdd = 2.5 V to 3.3 V, OE = Low, Output in high Z state – – 4.3 mA Vdd = 1.8 V, OE = Low, Output in high Z state – 2.6 8.5 A Vdd = 2.8 V to 3.3 V, ST = Low, Output is weakly pulled down – 1.4 5.5 A Vdd = 2.5 V, ST = Low, Output is weakly pulled down – 0.6 4.0 A Vdd = 1.8 V, ST = Low, Output is weakly pulled down March 15, 2021 www.sitime.com SiT8918B High Temperature Oscillator Table 1. Electrical Characteristics (continued) Parameters Symbol Min. Typ. Max. Unit Condition Input Characteristics Input High Voltage VIH 70% – – Vdd Pin 1, OE or ST Input Low Voltage VIL – – 30% Vdd Pin 1, OE or ST Input Pull-up Impedance Z_in 50 87 150 k Pin 1, OE logic high or logic low, or ST logic high 2 – – M Pin 1, ST logic low Startup and Resume Timing Startup Time T_start – – 5 ms Measured from the time Vdd reaches its rated minimum value T_oe – – 130 ns f = 110 MHz. For other frequencies, T_oe = 100 ns + 3 * clock periods T_resume – – 5 ms Measured from the time ST pin crosses 50% threshold Enable/Disable Time Resume Time Jitter RMS Period Jitter T_jitt Peak-to-peak Period Jitter T_pk RMS Phase Jitter (random) T_phj – 1.6 2.5 ps f = 75 MHz, Vdd = 2.5 V, 2.8 V, 3.0 V or 3.3 V – 1.9 3 ps f = 75 MHz, Vdd = 1.8 V – 12 20 ps f = 75 MHz, Vdd = 2.5 V, 2.8 V, 3.0 V or 3.3 V – 14 25 ps f = 75 MHz,Vdd = 1.8 V – 0.5 0.8 ps f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz – 1.3 2 ps f = 75 MHz, Integration bandwidth = 12 kHz to 20 MHz 50 100 ps f = 100 MHz, Vdd = 1.8 V, 2.5 V, 2.8 V, 3.0 V or 3.3 V, 10,000 cycles 10 30 ps f = 100 MHz, Vdd = 1.8 V, 2.5 V, 2.8 V, 3.0 V or 3.3 V Long Term Jitter T_ltj – Cycle-to-cycle Jitter T_ccj – LVCMOS Output Characteristics Duty Cycle Rise/Fall Time DC 45 – 55 % All Vdds Tr, Tf – 1.0 2.0 ns Vdd = 2.5 V, 2.8 V, 3.0 V or 3.3 V, 20% - 80% – 1.3 2.5 ns Vdd =1.8 V, 20% - 80% – 1.0 3 ns Vdd = 2.25 V - 3.63 V, 20% - 80% Output High Voltage VOH 90% – – Vdd IOH = -4 mA (Vdd = 3.0 V or 3.3 V) IOH = -3 mA (Vdd = 2.8 V or 2.5 V) IOH = -2 mA (Vdd = 1.8 V) Output Low Voltage VOL – – 10% Vdd IOL = 4 mA (Vdd = 3.0 V or 3.3 V) IOL = 3 mA (Vdd = 2.8 V or 2.5 V) IOL = 2 mA (Vdd = 1.8 V) Table 2. Pin Description Pin Symbol Output Enable 1 OE/ST ̅ ̅ ̅ /NC Functionality H[1]: specified frequency output L: output is high impedance. Only output driver is disabled. Standby H[1]: specified frequency output L: output is low (weak pull down). Device goes to sleep mode. Supply current reduces to I_std. No Connect Any voltage between 0 and Vdd or Open[1]: Specified frequency output. Pin 1 has no function. 2 GND Power Electrical ground 3 OUT Output Oscillator output 4 VDD Power Power supply voltage[2] Top View OE/ST/NC 1 4 VDD GND 2 3 OUT Figure 1. Pin Assignments Notes: 1. In OE or ST ̅ ̅ ̅ mode, a pull-up resistor of 10 kΩ or less is recommended if pin 1 is not externally driven. If pin 1 needs to be left floating, use the NC option. 2. A capacitor of value 0.1 µF or higher between Vdd and GND is required. Rev 1.03 Page 2 of 18 www.sitime.com SiT8918B High Temperature Oscillator Table 3. Absolute Maximum Limits Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings. Min. Max. Unit Storage Temperature Parameter -65 150 °C Vdd V -0.5 4 Electrostatic Discharge – 2000 V Soldering Temperature (follow standard Pb free soldering guidelines) – 260 °C Junction Temperature[3] – 150 °C Note: 3. Exceeding this temperature for extended period of time may damage the device. Table 4. Thermal Consideration[4] Package JA, 4 Layer Board (°C/W) JA, 2 Layer Board (°C/W) JC, Bottom (°C/W) 7050 142 273 30 5032 97 199 24 3225 109 212 27 2520 117 222 26 2016 152 252 36 Note: 4. Refer to JESD51-7 for JA and JC definitions, and reference layout used to determine the JA and JC values in the above table. Table 5. Maximum Operating Junction Temperature[5] Max Operating Temperature (ambient) Maximum Operating Junction Temperature 105°C 115°C 125°C 135°C Note: 5. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature. Table 6. Environmental Compliance Parameter Condition/Test Method Mechanical Shock MIL-STD-883F, Method 2002 Mechanical Vibration MIL-STD-883F, Method 2007 Temperature Cycle JESD22, Method A104 Solderability MIL-STD-883F, Method 2003 Moisture Sensitivity Level MSL1 @ 260°C Rev 1.03 Page 3 of 18 www.sitime.com SiT8918B High Temperature Oscillator Test Circuit and Waveform[6] Vdd Vout 4 Power Supply Test Point tr 3 80% Vdd 15pF (including probe and fixture capacitance) 0.1 uF 2 1 tf 50% 20% Vdd High Pulse (TH) Vdd OE/ST Function Low Pulse (TL) Period 1 kΩ Figure 2. Test Circuit Figure 3. Waveform Note: 6. Duty Cycle is computed as Duty Cycle = TH/Period. Timing Diagrams 90% Vdd Vdd Vdd 50% Vdd [7] T_start Pin 4 Voltage No Glitch during start up T_resume ST Voltage CLK Output CLK Output HZ HZ T_start: Time to start from power-off T_resume: Time to resume from ST Figure 4. Startup Timing (OE/ST Mode) Figure 5. Standby Resume Timing (ST Mode Only) Vdd Vdd 50% Vdd OE Voltage 50% Vdd T_oe OE Voltage T_oe CLK Output CLK Output HZ HZ T_oe: Time to put the output in High Z mode T_oe: Time to re-enable the clock output Figure 7. OE Disable Timing (OE Mode Only) Figure 6. OE Enable Timing (OE Mode Only) Note: 7. SiT8918 has “no runt” pulses and “no glitch” output during startup or resume. Rev 1.03 Page 4 of 18 www.sitime.com SiT8918B High Temperature Oscillator Performance Plots[8] 1.8 V 2.5 V 2.8 V 3V 3.3 V 6.0 DUT1 DUT2 DUT3 DUT4 DUT5 DUT6 DUT7 DUT8 DUT9 DUT10 DUT11 DUT12 DUT13 DUT14 DUT15 DUT16 DUT17 DUT18 DUT19 DUT20 25 5.5 20 15 Frequency (ppm) Idd (mA) 5.0 4.5 4.0 3.5 10 5 0 -5 -10 -15 -20 3.0 -25 0 20 40 60 80 100 ‐55 ‐35 ‐15 Frequency (MHz) Figure 8. Idd vs Frequency 1.8 V 2.5 V 2.8 V 3.0 V 25 45 65 85 105 125 Figure 9. Frequency vs Temperature 3.3 V 1.8 V 2.5 V 2.8 V 3.0 V 3.3 V 55 4.0 54 3.5 53 3.0 52 Duty cycle (%) RMS period jitter (ps) 5 Temperature (°C) 2.5 2.0 1.5 1.0 51 50 49 48 47 0.5 46 0.0 0 20 40 60 80 45 100 0 20 40 Frequency (MHz) Figure 10. RMS Period Jitter vs Frequency 2.5 V 2.8 V 3.0 V 3.3 V 1.8 V 2.5 2.5 2.0 2.0 1.5 1.0 100 2.5 V 2.8 V 20 40 3.0 V 3.3 V 1.5 1.0 0.5 0.5 0.0 0.0 -40 -20 0 20 40 60 80 100 -40 120 -20 0 60 80 100 120 Temperature (°C) Temperature (°C) Figure 12. 20%-80% Rise Time vs Temperature Rev 1.03 80 Figure 11. Duty Cycle vs Frequency Fall time (ns) Rise time (ns) 1.8 V 60 Frequency (MHz) Figure 13. 20%-80% Fall Time vs Temperature Page 5 of 18 www.sitime.com SiT8918B High Temperature Oscillator Performance Plots[8] (continued) 1.8 V 2.5 V 2.8 V 3.0 V 3.3 V 1.8 V 2.5 V 2.8 V 3.0 V 3.3 V 1.0 2.0 1.9 0.9 1.8 0.8 IPJ (ps) IPJ (ps) 1.7 1.6 1.5 1.4 1.3 0.7 0.6 0.5 1.2 0.4 1.1 1.0 0.3 10 20 30 40 50 60 70 80 90 100 110 10 Frequency (MHz) 20 30 40 50 60 70 80 90 100 110 Frequency (MHz) Figure 15. RMS Integrated Phase Jitter Random (900 kHz to 20 MHz) vs Frequency[9] Figure 14. RMS Integrated Phase Jitter Random (12 kHz to 20 MHz) vs Frequency[9] Notes: 8. All plots are measured with 15 pF load at room temperature, unless otherwise stated. 9. Phase noise plots are measured with Agilent E5052B signal source analyzer. Integration range is 12 kHz to 5 MHz for carrier frequencies up to 40 MHz. Rev 1.03 Page 6 of 18 www.sitime.com SiT8918B High Temperature Oscillator then increasing the drive strength setting on the SiT8918. Programmable Drive Strength The SiT8918 includes a programmable drive strength feature to provide a simple, flexible tool to optimize the clock rise/fall time for specific applications. Benefits from the programmable drive strength feature are: ◼ Improves system radiated electromagnetic interference (EMI) by slowing down the clock rise/fall time. ◼ Improves the downstream clock receiver’s (RX) jitter by decreasing (speeding up) the clock rise/fall time. ◼ Ability to drive large capacitive loads while maintaining full swing with sharp edge rates. For more detailed information about rise/fall time control and drive strength selection, see the see the SiTime Application Notes section. The SiT8918 can support up to 60 pF or higher in maximum capacitive loads with drive strength settings. Refer to the Rise/Tall Time Tables (Tables 7 to 11) to determine the proper drive strength for the desired combination of output load vs. rise/fall time. SiT8918 Drive Strength Selection Tables 7 through 11 define the rise/fall time for a given capacitive load and supply voltage. 1. 2. 3. EMI Reduction by Slowing Rise/Fall Time Figure 16 shows the harmonic power reduction as the rise/fall times are increased (slowed down). The rise/fall times are expressed as a ratio of the clock period. For the ratio of 0.05, the signal is very close to a square wave. For the ratio of 0.45, the rise/fall times are very close to neartriangular waveform. These results, for example, show that the 11th clock harmonic can be reduced by 35 dB if the rise/fall edge is increased from 5% of the period to 45% of the period. 5. Calculating Maximum Frequency Based on the rise and fall time data given in Tables 7 through 11, the maximum frequency the oscillator can operate with guaranteed full swing of the output voltage over temperature as follows: trise=0.05 trise=0.1 trise=0.15 trise=0.2 trise=0.25 trise=0.3 trise=0.35 trise=0.4 trise=0.45 10 0 Harmonic amplitude (dB) 4. -10 -20 Select the table that matches the SiT8918 nominal supply voltage (1.8 V, 2.5 V, 2.8 V, 3.0 V, 3.3 V). Select the capacitive load column that matches the application requirement (5 pF to 60 pF) Under the capacitive load column, select the desired rise/fall times. The left-most column represents the part number code for the corresponding drive strength. Add the drive strength code to the part number for ordering purposes. 1 Max Frequency = 5 x Trf_20/80 -30 -40 where Trf_20/80 is the typical value for 20%-80% rise/fall time. -50 -60 Example 1 -70 -80 1 3 5 7 9 11 Calculate fMAX for the following condition: Harmonic number ◼ Figure 16. Harmonic EMI reduction as a Function of Slower Rise/Fall Time ◼ ◼ Jitter Reduction with Faster Rise/Fall Time Power supply noise can be a source of jitter for the downstream chipset. One way to reduce this jitter is to speed up the rise/fall time of the input clock. Some chipsets may also require faster rise/fall time in order to reduce their sensitivity to this type of jitter. Refer to the Rise/Fall Time Tables (Table 7 to Table 11) to determine the proper drive strength. Vdd = 1.8 V (Table 7) Capacitive Load: 30 pF Typical Tr/f time = 3 ns (rise/fall time part number code = E) Part number for the above example: SiT8918BE12-18E-66.666660 Drive strength code is inserted here. Default setting is “-” High Output Load Capability The rise/fall time of the input clock varies as a function of the actual capacitive load the clock drives. At any given drive strength, the rise/fall time becomes slower as the output load increases. As an example, for a 3.3 V SiT8918 device with default drive strength setting, the typical rise/fall time is 1 ns for 15 pF output load. The typical rise/fall time slows down to 2.6 ns when the output load increases to 45 pF. One can choose to speed up the rise/fall time to 1.83 ns by Rev 1.03 Page 7 of 18 www.sitime.com SiT8918B High Temperature Oscillator Rise/Fall Time (20% to 80%) vs CLOAD Tables Table 7. Vdd = 1.8 V Rise/Fall Times for Specific CLOAD Table 9. Vdd = 2.5 V Rise/Fall Times for Specific CLOAD Rise/Fall Time Typ (ns) Rise/Fall Time Typ (ns) Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF L A R B T E U or "‐": default 6.16 3.19 2.11 1.65 0.93 0.78 0.70 0.65 11.61 6.35 4.31 3.23 1.91 1.66 1.48 1.30 22.00 11.00 7.65 5.79 3.32 2.94 2.64 2.40 31.27 16.01 10.77 8.18 4.66 4.09 3.68 3.35 39.91 21.52 14.47 11.08 6.48 5.74 5.09 4.56 L A R B T E or "‐": default U F 4.13 2.11 1.45 1.09 0.62 8.25 4.27 2.81 2.20 1.28 12.82 7.64 5.16 3.88 2.27 21.45 11.20 7.65 5.86 3.51 27.79 14.49 9.88 7.57 4.45 0.54 0.43 0.34 1.00 0.96 0.88 2.01 1.81 1.64 3.10 2.79 2.54 4.01 3.65 3.32 Table 10. Vdd = 3.0 V Rise/Fall Times for Specific CLOAD Table 8. Vdd = 2.8 V Rise/Fall Times for Specific CLOAD Rise/Fall Time Typ (ns) Rise/Fall Time Typ (ns) Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF L A R B T E or "‐": default U F 3.77 1.94 1.29 0.97 0.55 0.44 0.34 0.29 7.54 3.90 2.57 2.00 1.12 1.00 0.88 0.81 12.28 7.03 4.72 3.54 2.08 1.83 1.64 1.48 19.57 10.24 7.01 5.43 3.22 2.82 2.52 2.29 25.27 13.34 9.06 6.93 4.08 3.67 3.30 2.99 L A R B T or "‐": default E U F 3.60 1.84 1.22 0.89 0.51 0.38 0.30 0.27 7.21 3.71 2.46 1.92 1.00 0.92 0.83 0.76 11.97 6.72 4.54 3.39 1.97 1.72 1.55 1.39 18.74 9.86 6.76 5.20 3.07 2.71 2.40 2.16 24.30 12.68 8.62 6.64 3.90 3.51 3.13 2.85 Table 11. Vdd = 3.3 V Rise/Fall Times for Specific CLOAD Rise/Fall Time Typ (ns) Drive Strength \ CLOAD 5 pF 15 pF 30 pF 45 pF 60 pF L A R B 3.39 1.74 1.16 0.81 6.88 3.50 2.33 1.82 11.63 6.38 4.29 3.22 17.56 8.98 6.04 4.52 23.59 12.19 8.34 6.33 T or "‐": default E U F 0.46 0.33 0.28 0.25 1.00 0.87 0.79 0.72 1.86 1.64 1.46 1.31 2.60 2.30 2.05 1.83 3.84 3.35 2.93 2.61 Rev 1.03 Page 8 of 18 www.sitime.com SiT8918B High Temperature Oscillator Pin 1 Configuration Options (OE, ST ̅ ̅ ̅ , or NC) Pin 1 of the SiT8918 can be factory-programmed to support three modes: Output enable (OE), standby (ST ̅ ̅ ̅ ) or No Connect (NC). These modes can also be programmed with the Time Machine using field programmable devices. Output Enable (OE) Mode In the OE mode, applying logic Low to the OE pin only disables the output driver and puts it in Hi-Z mode. The core of the device continues to operate normally. Power consumption is reduced due to the inactivity of the output. When the OE pin is pulled High, the output is typically enabled in