BC857C

BC856/BC857/BC858 TRANSI STOR (PNP) MARKING: Equivalent Circuit: SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES: ※ Ideaiiy suited for automatic insertion ※ For switching and AF amplifier applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit VCBO -80 -50 -30 V VCEO -65 -45 -30 V VEBO -5 V Collector Current IC -0.1 A Collector Power Dissipation PC 200 mW RΘJA 625 ℃/W Junction Temperature Tj 150 ℃ Storage Temperature Tstg -65～+150 ℃ DEVICE MARKING: BC857A=3E; BC857B=3F; BC857C=3G Collector-Base Voltage Collector-Emitter Voltage BC856 BC857 BC858 BC856 BC857 BC858 Emitter-Base Voltage Thermal Resistance From Junction To Ambient BC856A=3A; BC856B=3B www.yongyutai.com BC858A=3J; BC858B=3K; BC858C=3L PAGE 1 BC856/BC857/BC858 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test Condition Min Collector-base breakdown voltage BC856 BC857 BC858 V(BR)CBO IC= -10μA, IE=0 -80 -50 -30 V IC= -10mA, IB=0 -65 -45 -30 V V(BR)EBO IE=-1μA, IC=0 -5 V Collector cut-off current BC856 BC857 BC858 ICBO VCB=-70 V , IE=0 VCB=-50 V , IE=0 VCB=-30 V , IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-5V , IC=0 -0.1 μA Collector-emitter breakdown voltage BC856 V(BR)CEO BC857 BC858 Emitter-base breakdown voltage Typ Max Unit DC current gain BC856A; 857A; 858A BC856B; 857B; 858B BC857C; BC858C hFE VCE=-5V, IC= -2mA Collector-emitter saturation voltage VCE(sat) IC=-100 mA, IB= -5mA -0.5 V Base-emitter saturation voltage VBE(sat) IC=-100 mA, IB= -5mA -1.1 V fT VCE=-5V, IC= -10mA f=100MHz Cob VCE=-10V, f=1MHz Transition frequency Collector Current Capacitance 125 220 420 250 475 800 100 MHz 4.5 pF CLASSIFICATION OF hFE Rank L H J Range 125-200 200-350 300-400 www.yongyutai.com PAGE 2 BC856/BC857/BC858 TYPICAL ELEC TRICAL AND THERMAL CHARACTERISTICS www.yongyutai.com PAGE 3 BC856/BC857/BC858 www.yongyutai.com PAGE 4