2N7002AK

2N7002 A K SOT-23 N-Channel Enhancement MOSFET 3 High Speed Switching Applications ESD protected gate 2 Low ON-resistance RDS(on) = 2.8 Ω (typ.) (@VGS = 10 V) RDS(on) = 3.1 Ω (typ.) (@VGS = 5 V) RDS(on) = 3.2 Ω (typ.) (@VGS = 4.5 V) 1 1.GATE 2.SOURCE 3.DRAIN ■ Simplified outline(SOT-23) 3 ■ Marking Code:NJ 1 2 Equivalent Circuit (top view) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain–source voltage VDSS 60 V Gate–source voltage VGSS ± 20 V DC ID 200 Pulse IDP (Note 2) 760 PD (Note 3) 320 PD (Note 4) 1000 Channel temperature Tch 150 °C Storage temperature Tstg −55 to 150 °C Drain current (Note1) Power dissipation mA mW Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: The channel temperature should not exceed 150°C during use. Note 2: Pulse width ≤ 10 µs, Duty ≤ 1% Note 3: Mounted on an FR4 board 2 (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.42 mm x 3) Note 4: Mounted on an FR4 board 2 (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm ) www.yfwdiode.com 1/5 Dongguan YFW Electronics Co, Ltd. 2N7002 A K SOT-23 Electrical Characteristics (Ta = 25°C, Otherwise specified) Characteristic Drain-source breakdown voltage Symbol Min Typ. Max Unit ID = 250 µA, VGS = 0 V 60 ― ― V VDS = 60 V, VGS = 0 V ― ― 1 VDS = 60 V, VGS = 0 V, Tj=150 °C ― ― 200 VGS = ±16 V, VDS = 0 V ― ― ±2 VGS = ±10 V, VDS = 0 V ― ― ±0.5 VGS = ±5 V, VDS = 0 V ― ― ±0.1 1.1 ― 2.1 V ― 450 ― mS ID = 100 mA, VGS = 10 V ― 2.8 3.9 RDS (ON) ID = 100 mA, VGS = 10 V, Tj=150 °C ― 5.4 8.1 (Note 5) ID = 100 mA, VGS = 5 V ― 3.1 4.4 ID = 100 mA, VGS = 4.5 V ― 3.2 4.7 ― 0.27 0.35 ― 0.08 ― ― 0.08 ― ― 11 17 ― 3 ― V (BR) DSS Drain cutoff current IDSS Gate leakage current IGSS Test Condition Gate threshold voltage Vth ID = 250 µA, VDS = VGS Forward transfer admittance |Yfs| VDS = 10 V, ID = 200 mA Drain-source ON-resistance Total Gate Charge QG(tot) (Note 5) VDS = 30 V, ID = 200 mA μA Ω Gate-Source Charge QGS Gate-Drain Charge QGD Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss ― 0.7 ― td(on) ― 2 4 VDD = 40 V, ID = 160 mA ― 3 ― VGS = 0 V to 10 V, RG = 50 Ω ― 7 14 ― 24 ― ― -0.87 -1.2 Turn-on delay time Switching Rise time time Turn-off delay time tr td(off) Fall time VGS = 4.5 V VDS = 10 V, VGS = 0 V, f = 1 MHz tf Drain-source forward voltage VDSF ID = -115 mA, VGS = 0 V (Note 5) μA nC pF ns V Note 5: Pulse test (b) VIN Switching Time Test Circuit 10 V 90 % (a) Test Circuit 10 V OUT 0 10 μs RG IN RL VDD = 40 V RG = 50 Ω D.U. ≤ 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C VDD 10 % 0V (c) VOUT VDD 90 % 10 % VDS (ON) tr tf td(on) td(off) www.yfwdiode.com 2/5 Dongguan YFW Electronics Co, Ltd. 2N7002 A K SOT-23 ID – VDS ID – VGS 1000 200 (mA) Common Source Ta = 25 °C Pulse Test 3.0 V 10 V 3.5 V 150 Drain current ID Drain current ID (mA) 250 5.0 V 100 2.5V 50 Common Source VDS = 5 V Pulse Test 100 Ta = 150 °C 10 100 °C 25 °C 1 -25 °C 0 VGS = 2 V 0 2.0 1.0 3.0 Drain–source voltage VDS Drain–source ON-resistance RDS (ON) (Ω) 3.0V 3.5 V 4 VGS = 10 V 2 5.0 V 0 50 100 150 Drain current ID 6 5 4 ID = 100 mA / VGS = 10 V 2 1 0 −50 0 50 100 Ambient temperature Ta (°C) www.yfwdiode.com 100 °C 4 25 °C 2 -25 °C 0 2 6 4 10 8 (V) Vth – Ta Common Source VDS = VGS ID = 0.25 mA 2.0 1.5 1.0 0.5 0 −50 150 (V) Ta = 150 °C 2.5 100 mA / 4.5 V 3 6 Gate–source voltage VGS 100 mA / 5.0V 4.0 ID = 200 mA Common Source Pulse Test (mA) RDS (ON) – Ta Common Source Pulse Test 3.0 8 0 200 Gate threshold voltage Vth (V) 0 2.0 RDS (ON) – VGS 10 8 6 1.0 Gate–source voltage VGS Common Source Ta = 25°C Pulse Test 2.5V Drain–source ON-resistance RDS (ON) (Ω) (V) RDS (ON) – ID 10 Drain–source ON-resistance RDS (ON) (Ω) 0.1 0 4.0 0 50 100 150 Ambient temperature Ta (°C) 3/5 Dongguan YFW Electronics Co, Ltd. 2N7002 A K SOT-23 C – VDS IDR – VDS 200 Common Source VGS = 0 V Pulse Test D (mA) Ciss 10 Drain reverse current IDR Capacitance C (pF) 100 Coss 1 0.1 0.1 Crss Common Source Ta = 25°C f = 1 MHz VGS = 0 V 1 10 Drain–source voltage VDS IDR G S 100 100 °C 50 25 °C -25 °C 0 0 100 -0.4 -0.2 (V) (V) Common Source ID = 0.2 A Ta = 25°C (V) (ns) VGS 4 Switching time t Gate-source voltage VDD = 15 V VDD = 30 V 2 100 td(off) 10 tr 0 0.1 0.2 0.3 Total Gate Charge 0.4 0.5 1 0.6 100 10 Drain current ID 1000 (mA) b 100 10 Single pulse Mounted on FR4 board 0.1 1 10 100 t = 10 ms* DC operation 10 1 1000 *Single Pulse Ta = 25 °C Curves must be derated linearly with increase in temperature. Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2 ) 0.1 Pulse width tw (s) t = 1 ms* This area Limited by RDS(ON) 100 a: 25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.42 mm2 x 3 b: 25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2 0.01 (mA) t = 100 µs* a 1 0.001 1000 Safe Operating Area Rth – tw 1000 td(on) 1 Qg (nC) Drain current ID Transient thermal impedance Rth (°C/W) -1.2 Common Source VDD = 40 V VGS = 0 V to 10 V Ta = 25 °C tf 1000 6 0 -1.0 t – ID 10000 8 -0.8 -0.6 Drain–source voltage VDS Dynamic Input Characteristic 10 Ta = 150 °C 150 1 VDSS max 10 Drain–source voltage VDS 100 (V) Note: The above characteristics curves are presented for reference only and not guaranteed by production test. www.yfwdiode.com 4/5 Dongguan YFW Electronics Co, Ltd. 2N7002 A K SOT-23 SOT-23 Package Outline D E B A X HE v M A 3 Q A A1 1 2 e1 c bp w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 Summary of Packing Options Package SOT-23 www.yfwdiode.com Packing Description Packing Quantity Industry Standard Tape/Reel,7”reel 3000 EIA-481-1 5/5 Dongguan YFW Electronics Co, Ltd.