2N7002KW

2N7002KW SOT-323 N-Channel Enhancement MOSFET 3 Features Low On-Resistance: RDS(ON) Low Gate Threshold Voltage 2 1.Gate 2.Source 3.Drain Low Input Capacitance Fast Switching Speed 1 Low Input/Output Leakage ■ Simplified outline(SOT-323) ƽ ESD Protected 2KV HBM D rain Gate Gate Protection Diode Source Absolute Maximum Ratings Ta=25 Parameter Symbol Rating Drain-Source Voltage VDS 60 Gate-Source Voltage -Continuous VGS ±20 Drain Current -Continuous ( Note:1) 300 ID -Pulsed Unit V mA 800 PD 350 mW RthJA 357 ć/W Junction Temperature TJ 150 Junction and Storage Temperature Range Tstg -55 to 150 Power Dissipation (Note 1) Thermal Resistance.Junction- to-Ambient ć Notes: 1. Device mounted on FR-4 PCB. Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Min Typ Max Unit 60 V Drain-Source Breakdown Voltage (Note.2) VDSS ID=100­A, VGS=0V Zero Gate Voltage Drain Current (Note.2) IDSS VDS=60V, VGS=0V 1 ­A Gate-Body Leakage Current (Note.2) IGSS VDS=0V, VGS=±20V ±10 uA Gate Threshold Voltage (Note.2) VGS(th) 2.5 V Static Drain-Source On-Resistance Forward Transfer Admittance Input Capacitance (Note.2) (Note.2) RDS(On) | Yfs | 1 VDS = 10V, ID = 1mA 2 VGS=10V, ID=50mA 3 VGS=10V, ID=200mA 80 Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Turn-On DelayTime td(on) Turn-Off DelayTime td(off) ¡ ms 50 Ciss Output Capacitance 1.6 VGS=10V, ID=500mA VGS=0V, VDS=25V, f=1MHz 25 pF 5 VGS=4.5V, VDS=15V, ID=200mA 0.8 ID=200mA, VDS=30V, RG=10ȍ,VGEN=10V,RL=150ȍ 20 nC ns 40 Note: 2. Short duration test pulse used to minimize self-heating effect. www.yfwdiode.com 1/4 Dongguan YFW Electronics Co, Ltd. 2N7002KW SOT-323 Typical Characteristics 1.4 1.00 V GS = 10V 8V 6V 5V 4V 3V V DS = 10V Pulsed 8V 6V 1.0 ID , DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 1.2 10V 5V 0.8 4V 0.6 0.4 T A = 125° C 0.10 T A = 75° C T A = 25° C 0.2 T A = -25° C 3V 0.01 0 0 1 2 1.5 1 5 4 3 V DS ,DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 2 VGS(th), GATE THRESHOLD VOLTAGE (V) 2 2.5 3 3.5 4.5 4 5 V GS , GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 10 V GS = 10V Pulsed V DS = 10V ID = 1mA Pulsed T A = 125° C 1.5 T A = 85° C T A = 150° C 1 1 T A = -55° C 0 -50 T A = 0° C T A = 25° C 0.5 -25 25 0 50 75 100 125 0.1 0.001 150 T ch, CHANNEL TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Channel Tem perature 10 T A = -25° C 0.1 0.01 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance Vs. Drain Current 1 7 V GS = 5V Pulsed T A = 125° C T A = 25° C Pulsed 6 T A = 85° C ID = 300mA T A = 150° C 5 4 1 T A = -55 ° C T A = 25° C T A = 0° C 3 T A = -25° C 2 ID = 150mA 1 0.1 0 0.001 0.01 0.1 1 0 4 6 8 10 12 14 16 18 20 V GS, GATE SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage ID , DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current www.yfwdiode.com 2 2/4 Dongguan YFW Electronics Co, Ltd. 2N7002KW SOT-323 2.5 1 V GS = 10V Pulsed V GS = 0V Pulsed ID R , R E V E R S E D R A IN C U R R E N T (A) ID = 300mA 2 I D = 150mA 1.5 1 0.5 T A = 125° C T A = 150 ° C 0.1 T A = 85 ° C T A = 25 ° C T A = 0° C 0.01 T A = -25° C T A = -55° C 0 0.001 -75 -50 -25 0 25 50 75 100 125 150 0.5 0 Tch, CHANNEL TEMPERATURE ( C) ° Fig. 7 Static Drain-Source On-State Resistance vs. Channel Tem perature |Yfs|, F O R W A R D T R A N S F E R A D M IT T A N C E (S) ID R , R E V E R S E D R A IN C U R R E N T (A) 1 V GS = 10V T A= 25°C Pulsed 0.1 0.01 V GS = 0V 0.001 0 0.5 1 1.5 1 V GS = 10V Pulsed T A = 25° C T A = 150° C 0.1 T A = -55° C C T A = 85 ° 0.01 0.001 0.001 V SD , SOURCE-DRAIN VOLTAGE (V) Fig. 9 Reverse Drain Current vs. Source-Drain Voltage www.yfwdiode.com 1 V SD , SOURCE-DRAIN VOLTAGE (V) Fig. 8 Reverse Drain Current vs. Source-Drain Voltage 0.01 0.1 1 ID , DRAIN CURRENT (A) Fig.10 Forward Transfer Admittance vs. Drain Current 3/4 Dongguan YFW Electronics Co, Ltd. 2N7002KW SOT-323 Package Outline SOT-323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 Summary of Packing Options Package Package Description Packing Quantity Industry Standard SOT-323 Tape/Reel,7”reel 3000 EIA-481-1 www.yfwdiode.com 4/4 Dongguan YFW Electronics Co, Ltd.