SPA65R72G

SPA65R72G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25oC (mΩ) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration Features 700 VGS=10V 72 130 30 34 single     ID=47A(Vgs=10V) Ultra Low Gate Charge Improved dv/dt Capability RoHS compliant Applications      TO-247 Switching Mode Power Supplies (SMPS) Server and Telecom Power Supplies Welding& Battery Chargers Solar(PV Inverters) AC/DC Bridge Circuits ORDERING INFORMATION Device SPA65R72G Device Package TO-247 Marking 65R72G ABSOLUTE MAXIMUM RATINGS (TC = 25oC, unless otherwise noted) Parameter Drain to Source Voltage Symbol Limit Unit VDSS 650 V o Continuous Drain Current (@TC=25 C) (1) A 29 (1) A ID 47 Drain current pulsed (2) IDM 138 Gate to Source Voltage VGS ± 30 V Single pulsed Avalanche Energy (3) EAS 1210 mJ dv/dt 25 V/ns dv/dt 15 PD 417 V/ns W 3.34 -55 to + 150 260 W/oC o C o C o Continuous Drain Current (@TC=100 C) MOSFET dv/dt ruggedness (@VDS=0~400V) Peak diode Recovery dv/dt (4) Total power dissipation (@TC=25oC) Derating Factor above 25 oC Operating Junction Temperature & Storage Temperature Maximum lead temperature for soldering purpose TSTG, TJ TL (1) A Notes 1. Drain current is limited by maximum junction temperature. 2. Repetitive rating : pulse width limited by junction temperature. 3 L = 20mH, I AS = 11A, VDD =100, RG=25Ω, Starting at TJ = 25oC 4. ISD ≤ ID, di/dt = 100A/us, VDD ≤ BVDSS, Starting at TJ =25oC 17-0901-Rev 01 1 Document Number: 17022 For technical questions, contact: Tech@Sinai-power.com. THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. © COPYRIGHT Sinai-Power Technologies. ALL RIGHTS RESERVED. SPA65R72G Sinai Power Technologies www.sinai-power.com THERMAL CHARACTERISTICS Parameter Value Symbol Thermal resistance, Junction to case Rthjc Thermal resistance, Junction to ambient Unit o C/W 0.33 Rthja o C/W 40 ELECTRICAL CHARACTERISTICS ( TC = 25oC unless otherwise specified ) Parameter Off Characteristics Drain to source breakdown voltage Breakdown voltage temperature coefficient Drain to source leakage current Gate to source leakage current, forward Gate to source leakage current, reverse On Characteristics Gate threshold voltage Drain to source on state resistance Gate resistance Symbol Test conditions BVDSS VGS=0V, ID=250uA ΔBVDSS / ΔTJ IDSS IGSS VGS(TH) RDS(ON) Rg Dynamic Characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn on delay time Rising time Turn off delay time Fall time Total gate charge Gate-source charge Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Gate-drain charge Qgd Min. Typ. Max. Unit 650 -- -- V ID=250uA, referenced to 25oC -- 0.7 -- V/oC VDS=650V, VGS=0V VDS=520V, TC=125oC VGS=30V, VDS=0V VGS=-30V, VDS=0V ----- ----- 1 50 100 -100 uA uA nA nA VDS=VGS, ID=250uA VGS=10V, ID =24A 3 --- 4 60 1 5 72 -- V mΩ ohm ---------- 4655 185 5.1 34 31 80 26 104 30 -------130 -- -- 34 -- VGS=0V, VDS=100V, f=1MHz VDS=380V, ID=15A， RG=4.7Ω , VGS=10V VDS=520V, VGS=10V, ID=24A pF ns nC SOURCE TO DRAIN DIODE RATINGS CHARACTERISTICS Parameter Continuous source current Symbol Test conditions Min. Typ. Max. Unit IS -- -- 47 A -- -- 138 A Pulsed source current ISM Integral reverse p-n Junction diode in the MOSFET Diode forward voltage drop. VSD IS=24A, VGS=0V -- 0.9 1.2 V Reverse recovery time Trr -- 633 -- ns Reverse recovery Charge Qrr IS=24A, VGS=0V, Vdd=25, dIF/dt=60A/us, -- 8 -- uC 17-0901-Rev 01 2 Document Number: 17022 For technical questions, contact: Tech@Sinai-power.com. THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. © COPYRIGHT Sinai-Power Technologies. ALL RIGHTS RESERVED. SPA65R72G Sinai Power Technologies Fig2. - Maximum Drain Current vs. Case Temperature ID (A) ID (A) Fig1. Output characteristics www.sinai-power.com TC(℃) V DS (V) Fig 4. Capacitance Characteristics C (pF) V GS (V) Fig3. Gate charge characteristics QG(nC) V DS (V) Fig 6. - Temperature vs. Drain-to-Source Voltage V DS (V) RDS(ON) ) (Nomalized) Fig 5. RDS(ON) vs junction temperature Tj (℃) Tj (℃) 17-0901-Rev 01 3 Document Number: 17022 For technical questions, contact: Tech@Sinai-power.com. THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. © COPYRIGHT Sinai-Power Technologies. ALL RIGHTS RESERVED. SPA65R72G Sinai Power Technologies www.sinai-power.com Fig 8. Forward characteristics of reverse diode ID (A) ID (A) Fig 7 . Safe operating area V DS (V) V SD (V) Nomalized Effective Transient Thermal Impedance Fig 9 . Transient thermal impedance Pulse Time (s) Fig 10. Gate charge test circuit & waveform VGS QG 10V QGS QGD Charge 17-0901-Rev 01 4 nC Document Number: 17022 For technical questions, contact: Tech@Sinai-power.com. THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. © COPYRIGHT Sinai-Power Technologies. ALL RIGHTS RESERVED. SPA65R72G Sinai Power Technologies www.sinai-power.com Fig 11. Switching time test circuit & waveform VDS RL 90% VDS RGS VDD VIN 10VIN DUT 10% 10% td(on) td(off) tr tON tf tOFF Fig 12. Unclamped Inductive switching test circuit & waveform Fig 13. Peak diode recovery dv/dt test circuit & waveform DUT + VDS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRM VDS RG Diode reverse current VDD Diode recovery dv/dt Same type as DUT 10VGS VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period 17-0901-Rev 01 VF VDD Body diode forward voltage drop 5 Document Number: 17022 For technical questions, contact: Tech@Sinai-power.com. THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. © COPYRIGHT Sinai-Power Technologies. ALL RIGHTS RESERVED. Sinai Power Technologies SPA65R72G www.sinai-power.com Disclaimer  SINAI assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SINAI products described or contained herein.  Specifications of any and all SINAI products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.  In the event that any or all SINAI products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.  This catalog provides information as of Nov. 2014. Specifications and information herein are subject to change without notice. 17-0901-Rev 01 6 Document Number: 17022 For technical questions, contact: Tech@Sinai-power.com. THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. © COPYRIGHT Sinai-Power Technologies. ALL RIGHTS RESERVED.