SPC9N50G

SPC9N50G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. at 25 oC (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration Features 550 VGS=10V 0.64 31.5 12 6.5 single      ID 9 A(Vgs=10V) Ultra Low Gate Charge Improved dv/dt Capability 100% Avalanche Tested ROHS compliant Applications      Switching Mode Power Supplies (SMPS) Power Factor Correction (PFC) Uninterruptible Power Supply (UPS) LED Lighting Notebook and Desktop ORDERING INFORMATION Device SPC9N50G Device Package TO-220F Marking 9N50G ABSOLUTE MAXIMUM RATINGS (TC = 25oC, unless otherwise noted) Parameter Limit Symbol Drain to Source Voltage VDSS Continuous Drain Current (@TC=25oC) ID o Continuous Drain Current (@TC=100 C) Unit SPC9N50G 500 V 9 A 4.5 A Drain current pulsed (note 1) IDM 32 A Gate to Source Voltage VGS 30 V EAS 285 Single pulsed Avalanche Energy (note 2) Peak diode Recovery dv/dt (note 3) dv/dt Total power dissipation (@TC=25oC) PD Derating Factor above 25oC Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. mJ 4.5 V/ns 36 122 122 0.28 1.33 1.28 TSTG, TJ -55 to + 150 o C TL 300 o C Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2 L = 15mH, IAS = 8A, VDD = 50V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤ 8 A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC 14-1101-Rev A, 25-Nov-14 1 Document Number: 82002 For technical questions, contact: Tech@Sinai-power.com. THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. © COPYRIGHT Sinai-Power Technologies. ALL RIGHTS RESERVED. SPC9N50G Sinai Power Technologies www.sinai-power.com THERMAL CHARACTERISTICS Parameter Value Symbol Unit SPC9N50G Thermal resistance, Junction to case Rthjc Thermal resistance, Junction to ambient Rthja 3.52 o C/W 62.5 o C/W ELECTRICAL CHARACTERISTICS ( TC = 25oC unless otherwise specified ) Parameter Symbol Test conditions Min. Typ. Max. Unit Off Characteristics Drain to source breakdown voltage Breakdown voltage temperature coefficient Drain to source leakage current Gate to source leakage current, forward Gate to source leakage current, reverse BVDSS VGS=0V, ID=250uA ΔBVDSS / ΔTJ 500 ID=250uA, referenced to 25oC IDSS IGSS V V/oC 0.51 VDS=500V, VGS=0V 1 uA VDS=400V, TC=125oC 50 uA VGS=25V, VDS=0V 100 nA VGS=-25V, VDS=0V -100 nA On Characteristics Gate threshold voltage VGS(TH) VDS=VGS, ID=250uA Drain to source on state resistance Forward Transconductance RDS(ON) VGS=10V, ID =4.0A VDS = 30 V, ID = 4.0 A Gfs 2 0.64 4 V 0.77 Ω 5.0 Ω Dynamic Characteristics Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss 1 Turn on delay time td(on) 27.5 Rising time 1271 VGS=0V, VDS=25V, f=1MHz tr Turn off delay time Fall time 25 VDS=250V, ID=8A，RG=25Ω td(off) pF 143 ns 127.5 tf 35.5 Total gate charge Qg 31.5 Gate-source charge Qgs Gate-drain charge Qgd VDS=440V, VGS=10V, ID=8A nC 12 6.5 SOURCE TO DRAIN DIODE RATINGS CHARACTERISTICS Parameter Symbol Test conditions Continuous source current IS Pulsed source current ISM Integral reverse p-n Junction diode in the MOSFET Diode forward voltage drop. VSD IS=8A, VGS=0V Reverse recovery time Trr Reverse recovery Charge Qrr IS=8A, VGS=0V, dIF/dt=100A/us 14-1101-Rev A, 25-Nov-14 2 Min. Typ. Max. Unit 8 A 32 A 1.4 V 567.5 ns 4 nC Document Number: 82002 For technical questions, contact: Tech@Sinai-power.com. THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. © COPYRIGHT Sinai-Power Technologies. ALL RIGHTS RESERVED. SPC9N50G Sinai Power Technologies www.sinai-power.com Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 0 10 150oC o -55 C o 25 C 0 10 ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ -1 10 ※ Notes : 1. VDS = 40V 2. 250μ s Pulse Test -1 -1 0 10 10 1 10 10 2 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 1.8 1 10 IDR, Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 1.6 1.4 1.2 VGS = 10V 1.0 0.8 0.6 VGS = 20V 0.4 ※ Note : TJ = 25℃ 0.2 0 2 4 6 8 10 12 14 16 0 10 150℃ 25℃ -1 10 18 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Source-Drain voltage [V] ID, Drain Current [A] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 2000 ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz Ciss 1600 Coss 1200 800 Crss 400 VGS, Gate-Source Voltage [V] 2400 Capacitance [pF] ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test 10 VDS = 400V 8 6 4 2 ※ Note : ID = 8A 0 -1 10 0 0 10 1 10 4 8 12 16 20 24 28 32 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics 14-1101-Rev A, 25-Nov-14 0 3 Figure 6. Gate Charge Characteristics Document Number: 82002 For technical questions, contact: Tech@Sinai-power.com. THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. © COPYRIGHT Sinai-Power Technologies. ALL RIGHTS RESERVED. SPC9N50G Sinai Power Technologies Typical Characteristics www.sinai-power.com (Continued) 3.0 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μ A 0.9 0.8 -100 -50 0 50 100 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 150 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 4 A 0.5 0.0 -100 200 o -50 0 150 200 Figure 8. On-Resistance Variation vs Temperature 2 2 100 TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature 10 50 o TJ, Junction Temperature [ C] 10 Operation in This Area is Limited by R DS(on) Operation in This Area is Limited by R DS(on) ID, Drain Current [A] ID, Drain Current [A] 100 us 1 10 1 ms 10 ms 100 ms 0 10 DC ※ Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -1 10 0 10 DC ※ Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -1 10 -2 -2 10 100 us 1 ms 10 ms 100 ms 1 10 10 0 1 10 2 10 3 10 0 10 10 1 10 2 10 3 10 VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 9-1. Maximum Safe Operating Area for SLP840C Figure 9-2. Maximum Safe Operating Area for SLF840C 8 ID, Drain Current [A] 7 6 5 4 3 2 1 0 25 50 75 100 125 150 TC, Case Temperature [℃] Figure 10. Maximum Drain Current vs Case Temperature 14-1101-Rev A, 25-Nov-14 4 Document Number: 82002 For technical questions, contact: Tech@Sinai-power.com. THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. © COPYRIGHT Sinai-Power Technologies. ALL RIGHTS RESERVED. SPC9N50G Sinai Power Technologies www.sinai-power.com 0 10 Zθ JC(t), Thermal Response D=0.5 0.2 ※ Notes : 1. Zθ JC(t) = 1.02 ℃/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Zθ JC(t) 0.1 -1 10 0.05 0.02 0.01 PDM t1 t2 single pulse -2 10 -5 -4 10 -3 10 -2 10 -1 10 0 10 1 10 10 t1, Square Wave Pulse Duration [sec] Figure 11-1. Transient Thermal Response Curve for SLP840C Zθ JC(t), Thermal Response D=0.5 0 10 0.2 ※ Notes : 1. Zθ JC(t) = 3.52 ℃/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * Zθ JC(t) 0.1 0.05 0.02 0.01 -1 10 PDM t1 t2 single pulse -5 10 -4 -3 10 -2 10 10 -1 10 0 1 10 10 t1, Square Wave Pulse Duration [sec] Figure 11-2. Transient Thermal Response Curve for SLF840C Gate Charge Test Circuit & Waveform VGS Same type as DUT QG 10V VDS QGS QGD DUT VGS 0.5mA Charge 14-1101-Rev A, 25-Nov-14 5 nC Document Number: 82002 For technical questions, contact: Tech@Sinai-power.com. THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. © COPYRIGHT Sinai-Power Technologies. ALL RIGHTS RESERVED. SPC9N50G Sinai Power Technologies www.sinai-power.com Fig 13. Switching time test circuit & waveform VDS RL RGS 90% VDS VDD VIN 10VIN DUT 10% 10% td(on) td(off) tr tON tf tOFF Fig 14. Unclamped Inductive switching test circuit & waveform Fig 15. Peak diode recovery dv/dt test circuit & waveform DUT + V DS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRM VDS RG Diode reverse current VDD Diode recovery dv/dt Same type as DUT 10VGS VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period 14-1101-Rev A, 25-Nov-14 VF VDD Body diode forward voltage drop 6 Document Number: 82002 For technical questions, contact: Tech@Sinai-power.com. THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. © COPYRIGHT Sinai-Power Technologies. ALL RIGHTS RESERVED. SP60R380G SP SPB60R380G 60R380G Sinai Power Technologies SPC9N50,SPE9N50,SPD9N50 SPC SPC12N65 7N80G Sinai Power Technologies www.sinai-power.com SPC9N50G www.sinai-power.com Disclaimer  SINAI assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SINAI products described or contained herein.  Specifications of any and all SINAI products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.  In the event that any or all SINAI products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.  This catalog provides information as of Nov. 2014. Specifications and information herein are subject to change without notice. 14-1101-Rev B, 25-Nov-14 6 Document Number: 82014 For technical questions, contact: Tech@Sinai-power.com. THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. © COPYRIGHT Sinai-Power Technologies. ALL RIGHTS RESERVED.