SPD5N50G

SPD5N50G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. at 25oC (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration Features 550 VGS=10V 1.5 42 12 6.5 single      ID=5A(Vgs=10V) Ultra Low Gate Charge Improved dv/dt Capability 100% Avalanche Tested RoHS compliant Applications      TO-252 Switching Mode Power Supplies (SMPS) PWM Motor Controls DC to DC Converters LED Lighting Bridge Circuits ORDERING INFORMATION Device SPD5N50G Device Package TO-252 Marking 5N50G ABSOLUTE MAXIMUM RATINGS (TC = 25oC, unless otherwise noted) Parameter Drain to Source Voltage Symbol Limit Unit VDSS 500(1) V 5(1) A 3.1 A IDM 20 A VGS 30 V EAS 285 mJ dv/dt 6 V/ns 112 W 0.88 W/oC o Continuous Drain Current (@TC=25 C) ID o Continuous Drain Current (@TC=100 C) Drain current pulsed (2) Gate to Source Voltage Single pulsed Avalanche Energy Peak diode Recovery dv/dt (3) (4) Total power dissipation (@TC=25oC) PD Derating Factor above 25 oC Operating Junction Temperature & Storage Temperature Maximum lead temperature for soldering purpose TSTG, TJ TL -55 to + 150 o 260 o C C Notes 1. Drain current is limited by maximum junction temperature. 2. Repetitive rating : pulse width limited by junction temperature. 3. L = 15mH, I AS = 5A, VDD = 50V, RG=25Ω, Starting at TJ = 25oC 4. ISD ≤ 5A, di/dt = 100A/us, VDD ≤ BVDSS, Starting at TJ =25oC 17-1018-Rev 01 1 Document Number: 17019 For technical questions, contact: Tech@Sinai-power.com. THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. © COPYRIGHT Sinai-Power Technologies. ALL RIGHTS RESERVED. SPD5N50G Sinai Power Technologies www.sinai-power.com THERMAL CHARACTERISTICS Parameter Value Symbol Thermal resistance, Junction to case Rthjc Thermal resistance, Junction to ambient Rthja Unit 0.75 o 62.5 o C/W C/W ELECTRICAL CHARACTERISTICS ( TC = 25oC unless otherwise specified ) Parameter Off Characteristics Drain to source breakdown voltage Breakdown voltage temperature coefficient Drain to source leakage current Gate to source leakage current, forward Gate to source leakage current, reverse On Characteristics Gate threshold voltage Drain to source on state resistance Forward Transconductance Symbol Test conditions BVDSS IDSS IGSS VGS(TH) RDS(ON) Gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Gate-drain charge Qgd Typ. Max. Unit 500 -- -- V ID=250uA, referenced to 25oC -- 0.5 -- V/oC VDS=500V, VGS=0V VDS=400V, TC=125oC VGS=30V, VDS=0V VGS=-30V, VDS=0V ----- ----- 1 50 100 -100 uA uA nA nA VDS=VGS, ID=250uA VGS=10V, ID =2.5A VDS = 30 V, ID =2.5A 2 --- -1.35 3.7 4 1.5 -- V Ω S ---------- 1271 143 1 27.5 25 127 35 31.5 12 ---------- -- 6.5 -- VGS=0V, ID=250uA ΔBVDSS / ΔTJ Dynamic Characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn on delay time Rising time Turn off delay time Fall time Total gate charge Gate-source charge Min. VGS=0V, VDS=25V, f=1MHz VDS=250V, ID=5A，RG=25Ω VDS=400V, VGS=10V, ID=5A pF ns nC SOURCE TO DRAIN DIODE RATINGS CHARACTERISTICS Parameter Continuous source current Symbol Test conditions Min. Typ. Max. Unit IS -- -- 5 A -- -- 20 A Pulsed source current ISM Integral reverse p-n Junction diode in the MOSFET Diode forward voltage drop. VSD IS=5A, VGS=0V -- -- 1.2 V Reverse recovery time Trr -- 567 -- ns Reverse recovery Charge Qrr IS=5A, VGS=0V, dIF/dt=100A/us -- 4 -- uC 17-1018-Rev 01 2 Document Number: 17019 For technical questions, contact: Tech@Sinai-power.com. THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. © COPYRIGHT Sinai-Power Technologies. ALL RIGHTS RESERVED. SPD5N50G Sinai Power Technologies www.sinai-power.com Fig1. Output characteristics RDS(ON) (Ω) ID (A) Fig2. Drain-source on-state resistance V DS (V) ID (A) Fig 4. Capacitance Characteristics C (pF) V GS (V) Fig3. Gate charge characteristics QG(nC) V DS (V) Fig 6. BVDSS vs junction temperature RDS(ON) (Nomalized) BV DSS (Nomalized) Fig 5. RDS(ON) vs junction temperature Tj (℃) 17-1018-Rev 01 Tj (℃) 3 Document Number: 17019 For technical questions, contact: Tech@Sinai-power.com. THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. © COPYRIGHT Sinai-Power Technologies. ALL RIGHTS RESERVED. SPD5N50G Sinai Power Technologies www.sinai-power.com Fig 8 . Transient thermal impedance ID (A) Z thjc (K/W) Fig 7 . Safe operating area Tp (Sec) V DS (V) ID (A) Fig 9. Forward characteristics of reverse diode V SD (V) Fig 10. Gate charge test circuit & waveform VGS QG QGS QGD 10V Charge 17-1018-Rev 01 4 nC Document Number: 17019 For technical questions, contact: Tech@Sinai-power.com. THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. © COPYRIGHT Sinai-Power Technologies. ALL RIGHTS RESERVED. SPD5N50G Sinai Power Technologies www.sinai-power.com Fig 11. Switching time test circuit & waveform VDS RL RGS 90% VDS VDD VIN 10VIN DUT 10% 10% td(on) tf td(off) tr tON tOFF Fig 12. Unclamped Inductive switching test circuit & waveform Fig 13. Peak diode recovery dv/dt test circuit & waveform DUT + VDS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRM VDS RG 10VGS Diode reverse current VDD Diode recovery dv/dt Same type as DUT VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period 17-1018-Rev 01 VF VDD Body diode forward voltage drop 5 Document Number: 17019 For technical questions, contact: Tech@Sinai-power.com. THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. © COPYRIGHT Sinai-Power Technologies. ALL RIGHTS RESERVED. Sinai Power Technologies SPD5N50G www.sinai-power.com Disclaimer  SINAI assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SINAI products described or contained herein.  Specifications of any and all SINAI products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.  In the event that any or all SINAI products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.  This catalog provides information as of Oct. 2017. Specifications and information herein are subject to change without notice. 17-1018-Rev 01 6 Document Number: 17019 For technical questions, contact: Tech@Sinai-power.com. THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. © COPYRIGHT Sinai-Power Technologies. ALL RIGHTS RESERVED.