SI2306

SI2306 SOT-23 Plastic-Encapsulate MOSFETS 30V N-Channel MOSFET V(BR)DSS 30V SOT-23 RDS(on)Typ ID Max 28mΩ@10V 5.0A 38mΩ@4.5V 3 1. GATE 2. SOURCE 1 3. DRAIN 2 APPLICATION Load Switch for Portable Devices z DC/DC Converter z FEATURE z Trench FET Power MOSFET MARKING Equivalent circuit D A6sHB G S PACKAGE SPECIFICATIONS Package Reel Size SOT-23 Reel DIA. (mm) Q'TY/Reel (pcs) Box Size (mm) QTY/Box (pcs) 178 3000 203×203×195 45000 7' Carton Size Q'TY/Carton (mm) (pcs) 438×438×220 180000 Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 TA = 25 oC Continuous Drain Current T = 70oC Maximum Power Dissipation 1) ,2) TA = 25 C T = 70oC 6WRUDJH7HPSHUDWXUH5DQJH Thermal Resistance from Junction-to-Ambient (t≤5s) A 20.4 1.5 PD W 0.9 A 0D[LPXP Junction 7HPSHUDWXUH A 4 IDM o V 5.0 ID A Pulsed Drain Current 1) Unit TJ 150 o Tstg -50 to 150 o 80 RθJA C C o C/W Notes 1) Pulse width limited by maximum junction temperature. 2) Surface Mounted on FR4 Board, t v 5 sec. The above data are for reference only. DN:T200218A0 http://www.microdiode.com Rev:2020A0 Page :1 SI2306 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Units Static Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID=250µA Gate-body leakage IGSS VGS=±20V, VDS=0V ±100 nA Zero gate voltage drain current IDSS VDS =30V, VGS =0V 1 µA VDS =24V, VGS =0V 100 µA Gate-threshold voltage (note 1) VGS(th) 1.6 2.5 V Ddrain-source on-resistance (note 1) RDS(on) VGS =10V, ID =4A 28 36 VGS =4.5V, ID =3A 38 50 V 30 1.0 VDS =VGS, ID =250μA 7 gFS VDS =4.5V, ID =2.5A Gate Resistance Rg f=1MHz Total Gate C harge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 1.3 Input capacitance Ciss 240 Output capacitance Coss Reverse transfer capacitance Crss 30 td(on) 4.4 Forward transconductance (note 1) mΩ S Dynamic characteristics 2.5 5 7.5 Ω 6 VDS =15V,ID=4A,VGS =10V nC 0.5 VDS =15V,VGS =0V, f=1MHz pF 35 Switching characteristics Turn-on delay time Rise time Turn-off delay time Fall time tr td(off) VDD=15V, VGS=10V, 2.6 ID =1A,RG=3.3Ω 25.5 tf ns 3.3 Drain-source body diode characteristics Source drain current(Body Diode) ISD Body diode forward voltage (note 1) VSD 0.85 ISD=4A, VGS = 0V 1.8 A 1.2 V Notes : Pulse Test : Pulse Width≤ 300µs, Duty Cycle≤ 2 %. 1. http://www.microdiode.com Rev:2020A0 Page :2 SI2306 ID, Drain-Source Current (A) VGS(TH), Gate -Source Voltage (V) Typical Characteristics VDS, Drain -Source Voltage (V) Fig2. Normalized Threshold Voltage Vs. Temperature Rdson, On -Resistance (mΩ)) ID, Drain-Source Current (A) Fig1. Typical Output Characteristics Tj - Junction Temperature (°C) VGS, Gate -Source Voltage (V) ID , Drain Current (A) Fig4. On-Resistance vs. Drain Current and Gate -ID - Drain Current (A) ISD, Reverse Drain Current (A) Fig3. Typical Transfer Characteristics VSD, Source-Drain Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage http://www.microdiode.com VDS, Drain -Source Voltage (V) Fig6. Maximum Safe Operating Area Rev:2019A0 Page :3 SI2306 C, Capacitance (pF) VGS, Gate-Source Voltage (V) Typical Characteristics VDS, Drain-Source Voltage (V) Fig8. Typical Gate Charge Vs. Gate-Source Voltage Thermal Resistance ZqJA Normalized Transient Fig7. Typical Capacitance Vs. Drain-Source Voltage Qg, Total Gate Charge (nC) Pulse Width (s) Fig9. Normalized Maximum Transient Thermal Impedance Fig10. Switching Time Test Circuit and waveforms http://www.microdiode.com Rev:2020A0 Page :4 SI2306 Outlitne Drawing SOT-23 Package Outline Dimensions e Suggested Pad Layout 0.037 0.95 0.037 0.95 L L1 E E1 Symbol A A1 b c D E E1 e L L1 θ Dimensions In Millimeters Min Typ Max 1.00 1.40 0.10 0.50 0.35 0.20 0.10 2.70 2.90 3.10 1.60 1.40 2.4 2.80 1.90 0.10 0.30 0.4 0° 10° Note: 1. Controlling dimension:in/millimeters. 2.General tolerance: ±0.05mm. 3.The pad layout is for reference purposes only. 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Important Notice and Disclaimer Microdiode Electronics (Jiangsu) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Jiangsu) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Jiangsu) assume any liability for application assistance or customer product design. Microdiode Electronics (Jiangsu) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Jiangsu). Microdiode Electronics (Jiangsu) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Jiangsu). http://www.microdiode.com Rev:2020A0 Page :5