MM3Z9V1B

山东晶导微电子股份有限公司 Jingdao Microelectronics co.LTD MM3Z2V0B THRU MM3Z75B Silicon Planar Zener Diodes PINNING PIN FEATURES • Total power dissipation: Max. 300mW. • Wide zener reverse voltage range 2.0V to 75V. • Small plastic package suitable for surface mounted design. • Tolerance approximately±2% DESCRIPTION 1 Cathode 2 Anode 2 1 MECHANICAL DATA ▪Case: SOD-323 ▪Terminals: Solderable per MIL-STD-750, Method 2026 ▪A pprox. Weight: 5.48mg / 0.00019oz Top View Simplified outline SOD-323 and symbol Absolute Maximum Ratings And Characteristics （Ta = 25 °C） Symbol Value Unit Power Dissipation P tot 300 mW Forward Voltage at I F = 10 mA VF 0.9 V RθJA 417 °C/W T j , T stg -55 ~ +150 °C Parameter Typical thermal resistance juncting to ambient Operating and Storage Temperature Range (1) Fig.1 Maximum Continuous Power Derating 0.35 Power Dissipation ( W ) 0.3 0.25 0.2 0.15 0.1 0.05 0.0 25 50 75 100 125 150 T c ,Case Temperature (°C) 2019.10 175 Transient Thermal Impedance（ °C /W） (1) Thermal resistance from junction to ambient at P.C.B. mounted with 2 .0" X 2.0" (5 X 5 cm) copper areas pads. Fig.2 Typical Transient Thermal Impedance 2000 1000 100 10 0.01 0.1 1 10 100 t, Pulse Duration（sec） SOD323-W-MM3Z2V0B~MM3Z75B-300mW Page 1 of 3 山东晶导微电子股份有限公司 Jingdao Microelectronics co.LTD MM3Z2V0B THRU MM3Z75B Characteristics at Ta = 25°C Zener Voltage Range （1） I ZT Type Marking V ZT（at I ZT） Min（V） Nom（V） Max（V） (mA) Dynamic Impedance Reverse Current Z ZT（at I ZT） IR at V R Max (Ω) Max（μA） （V） MM3Z2V0B 0B 1.96 2.0 2.04 5 100 120 0.5 MM3Z2V2B 0C 2.16 2.2 2.24 5 100 120 0.7 MM3Z2V4B C1 2.35 2.4 2.45 5 100 120 1 MM3Z2V7B D1 2.65 2.7 2.75 5 110 120 1 MM3Z3V0B E1 2.94 3.0 3.06 5 120 50 1 MM3Z3V3B F1 3.23 3.3 3.37 5 130 20 1 MM3Z3V6B H1 3.53 3.6 3.67 5 130 10 1 MM3Z3V9B J1 3.82 3.9 3.98 5 130 5 1 MM3Z4V3B K1 4.21 4.3 4.39 5 130 5 1 MM3Z4V7B M1 4.61 4.7 4.79 5 130 2 1 MM3Z5V1B N1 5 5.1 5.2 5 130 2 1.5 MM3Z5V6B P1 5.49 5.6 5.71 5 80 1 2.5 MM3Z6V2B R1 6.08 6.2 6.32 5 50 1 3 MM3Z6V8B X1 6.66 6.8 6.94 5 30 0.5 3.5 MM3Z7V5B Y1 7.35 7.5 7.65 5 30 0.5 4 MM3Z8V2B Z1 8.04 8.2 8.36 5 30 0.5 5 MM3Z9V1B A2 8.92 9.1 9.28 5 30 0.5 6 MM3Z10B B2 9.8 10 10.2 5 30 0.1 7 MM3Z11B C2 10.78 11 11.22 5 30 0.1 8 MM3Z12B D2 11.76 12 12.24 5 35 0.1 9 MM3Z13B E2 12.74 13 13.26 5 35 0.1 10 MM3Z15B F2 14.7 15 15.3 5 40 0.1 11 MM3Z16B H2 15.68 16 16.32 5 40 0.1 12 MM3Z18B J2 17.64 18 18.36 5 45 0.1 13 MM3Z20B K2 19.6 20 20.4 5 50 0.1 15 MM3Z22B M2 21.56 22 22.44 5 55 0.1 17 MM3Z24B N2 23.52 24 24.48 5 60 0.1 19 MM3Z27B P2 26.46 27 27.54 2 70 0.1 21 MM3Z30B R2 29.4 30 30.60 2 80 0.1 23 MM3Z33B X2 32.34 33 33.66 2 80 0.1 25 0.1 27 MM3Z36B Y2 35.28 36 36.72 2 90 MM3Z39B Z2 38.22 39 39.78 2 100 0.1 30 MM3Z43B A3 42.14 43 43.86 2 130 0.1 33 MM3Z47B B3 46.06 47 47.94 2 150 0.1 36 MM3Z51B C3 49.98 51 52.02 2 180 0.1 39 MM3Z56B D3 54.88 56 57.12 2 200 0.1 43 MM3Z62B E3 60.76 62 63.24 2 215 0.1 47 MM3Z68B F3 66.64 68 69.36 2 240 0.1 52 MM3Z75B H3 73.5 75 76.5 2 265 0.1 56 （1） V ZT is tested with pulses (20 ms) 2019.10 www.sdjingdao.com Page 2 of 3 山东晶导微电子股份有限公司 MM3Z2V0B THRU MM3Z75B Jingdao Microelectronics co.LTD PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 E E D b A C A1 ∠ALL ROUND L1 E1 SOD-323 mechanical data A C D E E1 b L1 A1 max 1.1 0.15 1.4 1.8 2.75 0.4 0.45 0.2 min 0.8 0.08 1.2 1.4 2.55 0.25 0.2 max 43 5.9 55 70 108 16 16 min 32 3.1 47 63 100 9.8 7.9 UNIT ∠ mm 9° 8 mil The recommended mounting pad size 1.4 (55) 1.2 (47) 1.2 (47) 1.2 (47) Unit： mm (mil) 2019.10 www.sdjingdao.com Page 3 of 3