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SCT12A0DHKR

SCT12A0DHKR

  • 厂商:

    SCT(芯洲科技)

  • 封装:

    DFN20L_3.5X4.5MM

  • 描述:

    SCT12A0DHKR

  • 数据手册
  • 价格&库存
SCT12A0DHKR 数据手册
SILICON CONTENT TECHNOLOGY SCT12A0 December 2017 2.7V-14V Vin, 30W Fully Integrated Synchronous Boost Converter FEATURES DESCRIPTION    Wide Input Voltage Range: 2.7V-14.0V Wide Output Voltage Range: 4.5V-14.6V Fully Integrated High-side/Low-side Power MOSFETs:13mΩ/11mΩ  Up to 12A Switch Current and Programmable Peak Current Limit Typical Shut-down Current: 1uA Programmable Switching Frequency: 200kHz2.2MHz Output Overvoltage Protection at 15.4V Feedback Overvoltage Protection at 110% of Reference Voltage Selectable PFM or Forced PWM Mode Programmable Soft Start Thermal Shutdown Protection: 150°C Available in DFN-20 3.5mmx4.5mm Package         APPLICATIONS      Bluetooth Audio Power Banks POS System E-Cigarette USB Power Delivery The SCT12A0 is a high efficiency synchronous boost converter with fully integrated a 13mΩ high-side MOSFET and an 11mΩ low-side MOSFET, supporting 2.7V to 14V input voltage range and up to 12-A switch current. The switch current limit can be adjustable with an external resistor. The SCT12A0 adapts constant off-time peak current control to provide fast transient. An external compensation network allows flexibility setting loop dynamics to achieve optimal transient performance at different load conditions. Using MODE pin selects either Pulse Frequency Modulation (PFM) operation or forced Pulse Width Modulation (PWM) operation. The switching frequency in PWM mode is adjustable from 200KHz to 2.2MHz by an external resistor. The device also features programmable soft-start time with an external capacitor. The SCT12A0 monitors both output voltage and feedback voltage to protect overvoltage condition. It features cycle-by-cycle peak current limit and thermal shutdown protection when the device over loads. The device is available in a low-profile package DFN20L 3.5mmx4.5mmx0.75mm with enhanced thermal power pad. TYPICAL APPLICATION Efficiency, Vout=9V 100% Efficiency 90% 80% Efficiency 70% 60% VIN=3.0V PWM 50% VIN=3.6V PWM 40% VIN=4.2V PWM VIN=3.0V PFM 30% VIN=3.6V PFM 20% VIN=4.2V PFM 10% 0% 0.01 0.10 1.00 10.00 Output Current (A) For more information www.silicontent.com © 2017 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT2A0 1 SCT12A0 REVISION HISTORY NOTE: Page numbers for previous revisions may differ from page numbers in the current version. DEVICE ORDER INFORMATION PART NUMBER PACKAGE MARKING PACKAGE DISCRIPTION SCT12A0 12A0 20-Lead 3.5mm×4.5mm Plastic DFN ABSOLUTE MAXIMUM RATINGS DESCRIPTION MIN MAX UNIT BOOT -0.3 23.5 V VIN, SW, VOUT, FSW -0.3 18 AGND Top View: 20-Lead Plastic DFN 3.5mmx4.5mm VCC Over operating free-air temperature unless otherwise PIN CONFIGURATION noted(1) ILIM EN FSW COMP SW V FB VOUT SW PGND 5.5 V Operating junction temperature TJ (2) -40 125 C Storage temperature TSTG -65 150 C (1) (2) SW VOUT SW VOUT BOOT MODE VIN NC NC -0.3 SS VCC, LIM,FB, EN, SS, COMP, MODE Stresses beyond those listed under Absolut Maximum Rating may cause device permanent damage. The device is not guaranteed to function outside of its Recommended Operation Conditions. The IC includes over temperature protection to protect the device during overload conditions. Junction temperature will exceed 150°C when over temperature protection is active. Continuous operation above the specified maximum operating junction temperature will reduce lifetime PIN FUNCTIONS NAME VCC 1 EN 2 FSW SW 2 NO. 3 4,5,6,7 BOOT 8 VIN 9 SS 10 NC 11, 12 MODE 13 VOUT 14,15,16 PIN FUNCTION Internal linear regulator output. Connect a 1uF or larger ceramic capacitor to ground. VCC cannot to be externally driven. No additional components or loading is recommended on this pin. Enable logic input. A 500KΩ resistor connects this pin to ground inside. Floating disables the device. Place a resistor from this pin to SW to sets the switching frequency. Switching node of the boost converter. Power supply for the high-side power MOSFET gate driver. Must connect a 0.1uF or greater ceramic capacitor between BOOT pin and SW node. Power supply input. Must be locally bypassed with a 0.1uF capacitor as close to the pin as possible. Place a ceramic cap from this pin to ground to program soft-start time. An internal 5uA current source pulls SS pin to VCC. Not connected inside. Connect to ground pad under IC on PCB for thermal dissipation and impendence reduction of C6 ground loop. Operation mode selection. 270KΩ internal resistor connects this pin to VCC. Floating or logic high enables PFM mode. Logic low enables forced PWM mode. Boost converter output. Connect a 1uF decoupling capacitor as close to VOUT pins and power ground pad as possible to reduce the ringing voltage of SW. For more information www.silicontent.com © 2017 Silicon Content Technology Co., Ltd. Product Folder Links: SCT12A0 All Rights Reserved SCT12A0 Feedback Input. Connect a resistor divider from VOUT to FB to set up output voltage. The device regulates FB to the internal reference value of 1.2V typical. Output of the error amplifier and switching converter loop compensation point. Inductor peak current limit set point input. A resistor connecting this pin to ground sets current limit through low-side power FET. FB 17 COMP 18 ILIM 19 AGND 20 Analog ground. Analog ground should be used as the common ground for all small signal analog inputs and compensation components. No electrical connection to PGND inside. PGND 21 Power ground. Must be soldered directly to ground planes using multiple vias directly under the IC for improved thermal performance and electrical contact. RECOMMENDED OPERATING CONDITIONS Over operating free-air temperature range unless otherwise noted PARAMETER VIN VOUT TJ DEFINITION Input voltage range Output voltage range Operating junction temperature MIN MAX UNIT 2.7 4.5 -40 14 14.6 125 V V °C MIN MAX UNIT -2 +2 kV -0.5 +0.5 kV ESD RATINGS PARAMETER Human Body Model (HBM), per ANSI-JEDEC-JS-0012014 specification, all pins (1) Charged Device Model (CDM), per ANSI-JEDEC-JS-0022014specification, all pins (1) VESD (1) DEFINITION HBM and CDM stressing are done in accordance with the ANSI/ESDA/JEDEC JS-001-2014 specification THERMAL INFORMATION PARAMETER RθJA RθJC THERMAL METRIC Junction to ambient thermal resistance (1) Junction to case thermal resistance (1) DFN-20L 38 39 UNIT °C/W (1) SCT provides RθJA and RθJC numbers only as reference to estimate junction temperatures of the devices. RθJA and RθJC are not a characteristic of package itself, but of many other system level characteristics such as the design and layout of the printed circuit board (PCB) on which the SCT12A0 is mounted, thermal pad size, and external environmental factors. The PCB board is a heat sink that is soldered to the leads and thermal pad of the SCT12A0. Changing the design or configuration of the PCB board changes the efficiency of the heat sink and therefore the actual RθJA and RθJC. For more information www.silicontent.com © 2017 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT12A0 3 SCT12A0 ELECTRICAL CHARACTERISTICS VIN=3.6V, TJ=-40°C~125°C, typical values are tested under 25°C. SYMBOL PARAMETER TEST CONDITION MIN Power Supply and Output VIN Operating input voltage VOUT Output voltage range VIN_UVLO Input UVLO Hysteresis ISD Shutdown current IQ VCC MAX UNIT 2.7 14 V 4.5V 14.6 V 2.6 200 2.7 V mV 1 3 uA 150 uA uA V 1.220 1.228 100 V V nA VIN rising Quiescent current from VIN Quiescent current from VOUT Internal linear regulator TYP EN=0, No load. Measured on VIN pin EN=2V, No load, No switching. Measured on VIN pin. 1 120 4.8 IVCC=5mA, VIN=6V Reference and Control Loop FPWM mode PSM mode VFB=1.2V 1.170 1.192 1.202 1.210 VREF Reference voltage of FB IFB FB pin leakage current GEA VCOMP=1.5V 190 uS VFB=VREF-200mV, VCOMP=1.5V 20 uA ICOMP_SNK Error amplifier trans-conductance Error amplifier maximum source current Error amplifier maximum sink current VFB=VREF+200mV, VCOMP=1.5V 20 uA VCOMP_H COMP high clamp VFB=1V, RILIM=100KΩ 1.5 V VCOMP_L COMP low clamp VFB=1.5V, RILIM=100KΩ,PFM 0.6 V Power MOSFETs RDSON_H High side FET on-resistance 13 mΩ RDSON_L 11 mΩ ICOMP_SRC Low side FET on-resistance Current Limit ILIM Peak current limit RILIM=100kΩ Enable and Mode Enable high threshold VEN Enable low threshold REN Enable pull down resistance RMODE MODE high threshold MODE low threshold MODE pull-up resistance ISS Soft-start charging current VMODE 10.5 12 13 A 1.2 V V kΩ 4 270 V V kΩ 5 uA VCC=5V 0.4 800 VCC=5V 1.5 Switching Frequency FSW Switching frequency RFSW=301k, VOUT=12V 500 tON_MIN Minimum on-time RFSW=301k, VOUT=12V 150 200 ns TOFF_MIN Minimum off-time RFSW=301k, VFB=0V 100 150 ns Output overvoltage threshold Hysteresis Feedback overvoltage with respect to reference voltage VOUT rising 15.4 250 110 105 kHz Protection VOVP_VOUT VOVP_VFB 4 VFB rising VFB falling For more information www.silicontent.com © 2017 Silicon Content Technology Co., Ltd. Product Folder Links: SCT12A0 All Rights Reserved V mV % % SCT12A0 SYMBOL PARAMETER TEST CONDITION TSD Thermal shutdown threshold Hysteresis TJ rising MIN TYP MAX UNIT 150 20 °C °C 100% 98% 96% 94% 92% 90% 88% 86% 84% 82% 80% 78% 76% 74% 72% 70% Efficiency Efficiency TYPICAL CHARACTERISTICS VIN=3V VIN=3.6V VIN=4.2V VIN=5V 0.01 0.10 1.00 10.00 VOUT=5V VOUT=9V VOUT=12V 0.01 Output Current (A) Figure 1. Efficiency, Vout=9V, fsw=560KHz, PFM 0.10 1.00 10.00 Output Current (A) Figure 2. Efficiency, Vin=3.6V, fsw=560KHz, PFM 100% 100% 90% 90% 80% 80% 70% Efficiency 70% Efficiency 100% 98% 96% 94% 92% 90% 88% 86% 84% 82% 80% 78% 76% 74% 72% 70% 60% 50% 40% VIN=3.6V VOUT=5V VOUT=9V 30% VIN=4.2V 20% 50% 40% VIN=3V 30% 60% VOUT=12V 20% VIN=5V 10% 10% 0 1 2 3 4 5 Output Current (A) Figure 3. Efficiency, Vout=9V, fsw=560KHz, PWM 0 1 2 3 4 5 Output Current (A) Figure 4. Efficiency, Vin=3.6V, fsw=560KHz, PWM For more information www.silicontent.com © 2017 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT12A0 5 SCT12A0 2500 Switch Peak Current Limit 16 Frequency (KHz) 2000 1500 1000 500 14 12 10 8 6 4 2 0 0 0 100 200 300 400 500 600 700 800 50 900 100 150 Resistance (K Ohm) 250 300 350 Resistance (K Ohm) Figure 5. Switching Frequency vs FSW Resistance Figure 6. Inductor Peak Current Limit vs RLIM Resistance 160 Quiescent Current (uA) 600 590 Frequency (KHz) 200 580 570 560 140 120 100 80 60 40 20 0 550 -40 -20 0 20 40 60 80 (OC) 100 80 100 120 Temperature Figure 7. Frequency vs Temperature 140 -40 -20 0 20 40 60 80 100 120 140 Temperature (OC) Figure 8. Quiescent Current vs Temperature 1.5 1.4 Shutdown Current (uA) 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 -40 -20 0 20 40 60 120 140 Temperature (OC) Figure 9. Shutdown Current vs Temperature 6 Figure 10. Feedback Reference Voltage vs Temperature For more information www.silicontent.com © 2017 Silicon Content Technology Co., Ltd. Product Folder Links: SCT12A0 All Rights Reserved SCT12A0 Figure 11. Load Regulation (Vin=3.6V, Vout=9V) Figure 12. Line Regulation FUNCTIONAL BLOCK DIAGRAM UVLO VIN 9 VCC BOOT SW SW SW SW 1 8 4 5 6 7 OTP UVLO BOOT Regulator LDO Thermal Sensor 14 VOUT 15 VOUT 16 VOUT 21 PGND Q2 VOUT Q1 NC NC 11 Dead Time and PWM Control Logic 12 OVP 270K VCC R S Q VCC OVP Q ILSD Sense 5uA + + 13 Mode SelectIon GM + + MODE 17 FB 10 SS 18 COMP + 1.2V 1/N UVLO OVP OTP 30pF V/I 3 + FSW ON/OFF and Protection VIN 800K 1.2V 2 19 20 EN ILIM AGND For more information www.silicontent.com © 2017 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT12A0 7 SCT12A0 OPERATION Overview The SCT12A0 device is a fully integrated synchronous boost converter, which regulates output voltage higher than input voltage. The constant off-time peak current mode control provides fast transient with pseudo fixed switching frequency. When low-side MOSFET Q1 turns on, input voltage forces the inductor current rise. When sensed voltage on low-side MOSFET peak current rises above the voltage of COMP, the device turns off low-side MOSFET and inductor current goes through body diode of high-side MOSFET Q2 during dead time. After dead time duration, the device turns on high-side MOSFET Q2 and the inductor current decreases. Based on Vin and Vout voltage, the device predicts required off-time and turns off high-side MOSFET Q2. This repeats on cycle-by-cycle based. The negative voltage feedback loop regulates the FB voltage to a 1.2V reference with an internal trans-conductance error amplifier. The feedback loop stability and transient response are optimized through an external loop compensation network connected to the COMP pin. The mode selection offers flexibility of design between forced Pulse Width Modulation (PWM) and Pulse Frequency Modulation (PFM) operations. When MODE pin is connected to VCC or floats, the SCT12A0 works at PFM mode to further increase the efficiency in light load condition. If MODE pin is connected to ground, the device works in forced PWM mode with low output voltage ripple. The quiescent current of SCT12A0 is 110uA typical under no-load condition and not switching. Disabling the device, the typical supply shutdown current is 1μA. A resistor connected between SW pin and the FSW pin sets the switching frequency. The wide switching frequency range of 200 kHz to 2.2 MHz offers optimization on efficiency or size of filter components. The SCT12A0 device features adjustable soft-start time, cycle-by-cycle low-side FET current limit, over-voltage protection, and over-temperature protection. The SCT12A0 uses two separate ground pins to avoid ground bouncing due to the high switching current through the N-channel power MOSFET. AGND pin sets the reference for all control functions. The source of the power MOSFET connects to PGND pin. Both grounds must be connected to the thermal pad on the PCB at the closest point. VIN Power The SCT12A0 is designed to operate from an input voltage supply range between 2.7 V to 14V. If the input supply is located more than a few inches from the converter, additional bulk capacitance may be required in addition to the ceramic bypass capacitors. A typical choice is an electrolytic or tantalum capacitor with a value of 47μF. VCC Power The internal VCC LDO provides the bias power supply for internal circuitries. A ceramic capacitor of no less than 1uF is required to bypass from VCC pin to ground. During starting up, input of VCC LDO is from VIN pin. Once the output voltage at VOUT pin exceeds VIN voltage, VCC LDO switches its input to VOUT pin. This allows higher voltage headroom of VCC at lower input voltage. The maximum current capability of VCC LDO is 130mA typical. No additional components or loading are recommended on this pin. Under Voltage Lockout UVLO The SCT12A0 features UVLO protection for voltage rails of VIN, VCC and BOOT-SW from the converter malfunction and the battery over discharging. The default VIN rising threshold is 2.6V typical at startup and falling threshold is 2.4V typical at shutdown. The internal VCC LDO dropout voltage is about 100mV and the device is disabled when VCC falling trips 2.1V typical threshold. The internal charge pump from BOOT to SW powers the gate driver to highside MOSFET Q2. The BOOT UVLO circuit monitors the capacitor voltage between BOOT pin and SW pin. When the voltage of BOOT-SW falls below a preset threshold 3V typical, high-side MOSFET Q2 turns off. As a result, the device works as a non-synchronous boost converter. Enable and Start-up 8 For more information www.silicontent.com © 2017 Silicon Content Technology Co., Ltd. Product Folder Links: SCT12A0 All Rights Reserved SCT12A0 When applying a voltage higher than the EN high threshold (maximum 1.2V), the SCT12A0 enables all functions and starts converter operation. To disable converter operation, EN voltage needs fall below its lower threshold (minimum 0.4V). An internal 800KΩ resistor connects EN pin to the ground. Floating EN pin automatically disables the device. The SCT12A0 features programmable soft start to prevent inrush current during power-up. SS pin sources an internal 5μA current charging an external soft-start capacitor CSS when EN pin exceeds turn-on threshold. The device uses the lower voltage between the internal voltage reference 1.2V and the SS pin voltage as the reference input voltage of error amplifier and regulates the output. The soft-start completes when SS pin voltage exceeds the internal 1.2V reference. Use equation 1 to calculate the soft-start time (10% to 90%). When EN pin is pulled low to disable the device, the SS pin will be discharged to ground. t SS = where     CSS ∗ VREF ISS (1) tSS is the soft start time VREF is the internal reference voltage of 1.2V CSS is the capacitance connecting to SS pin ISS is the source current of 5uA to SS pin Adjustable Switching Frequency The SCT612A0 features adjustable switching frequency from 200kHz to 2.2MHz. To set the switching frequency, an external resistor between SW pin and FSW pin is a must to guarantee the proper operation. Use Equation 2 or the curves in Figure 5 to determine the resistance for a given switching frequency. To reduce the solution size, one would typically set the switching frequency as higher as possible, but need to consider the tradeoff of the thermal dissipation and minimum on time of low-side power MOSFET. 6∗( 𝑅𝐹𝑅𝐸𝑄 = where:      1 𝑓𝑆𝑊 − 𝑇𝐷𝐸𝐿𝐴𝑌 ∗ 𝑉𝑂𝑈𝑇 𝑉𝐼𝑁 ) (2) 𝐶𝐹𝑅𝐸𝑄 fSW is the desired switching frequency TDELAY = 90 ns CFREQ = 34 pF VIN is the input voltage VOUT is the output voltage Adjustable Peak Current Limit The SCT12A0 boost converter implements cycle-by-cycle peak current limit function with sensing the internal lowside power MOSFET Q1 during over current condition. While the Q1 is turned on, its conduction current is monitored by the internal sensing circuitry. Once the low-side MOSFET Q1 current exceeds the limit, it turns off immediately. An external resistor connecting ILIM pin to ground sets the low-side MOSFET Q1 peak current limit threshold. Use Equation 3 or Figure 6 to calculate the peak current limit. 𝐼𝐿𝐼𝑀 = 1200 𝑅𝐿𝐼𝑀 (3) where:  ILIM is the peak current limit  RLIM is the resistance between ILIM pin to ground. For more information www.silicontent.com © 2017 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT12A0 9 SCT12A0 This current limit function is realized by detecting the current flowing through the low-side MOSFET. The current limit feature loses function in the output hard short circuit conditions. At normal operation, when the output hard shorts to ground, there is a direct path to short the input voltage through high-side MOSFET Q2 or its body diode even the Q2 is turned off. This could damage the circuit components and cause catastrophic failure at load circuit. Once VIN is present, VOUT is moved to VIN level due to the direct path from input to output even when the device is shut down or the load is not ready. The presence of unwanted output voltage before system start up sequence could cause system latch off or malfunction. To address the above issue, users need design external circuits for protection or choose SCT12A1 from Silicon Content Technology, which provides an option to insert an external P-channel MOSFET to disconnect output from input in application. Refer SCT12A1 data sheet for details of load disconnection feature. Over Voltage Protection and Minimum On-time The SCT12A0 features both VOUT pin over voltage protection and the FB pin over voltage protection. If the VOUT pin is above 15.4V typical or FB pin voltage exceeds 1.32V typical, the device stops switching immediately until the VOUT pin drops below 15.2 V or FB pin voltage drops below 1.26V. The OVP function prevents the connected output circuitry from un-predictive overvoltage. Featured feedback overvoltage protection prevents dynamic voltage spike to damage the circuitry at load during fast loading transient. The low-side MOSFET has minimum on-time 150ns typical limitation. While the device is operating at minimum on time and further increasing Vin pushed output voltage beyond regulation point. With output and feedback over voltage protection, the converter skips pulse with turning off high-side MOSFET and prevents output running higher to damage the load. Forced PWM and PFM Modes Connecting MODE pin to ground, the SCT12A0 forces the device operating at forced Pulse Width Modulation (PWM) mode with pseudo-fixed switching frequency regardless loading current. Operating in PWM mode can avoid the possible audible noise caused by lower frequency in PFM mode at light load. When the load current approaches zero, the high-side MOSFET current crosses zero and sinks current from output to maintain the constant output. Hence power efficiency in light load is much lower than heavy load. Floating MODE pin or connecting MODE pin to VCC, the SCT12A0 works at Pulse Frequency Modulation (PFM) mode to improve the power efficiency in light load. As the load current decreasing, the COMP pin voltage decreases as resulting the inductor current down. With the load current further decreasing, the COMP pin voltage decreases and be clamped to a voltage corresponding to the ILIM/12. The converter extends the off time of high-side MOSFET Q2 to reduce the average delivered current to output. The switching frequency is lower and varied depending on loading condition. In PFM mode, the peak inductor current is fixed at around 1A and the output voltage is regulated 0.7% higher than the setting output voltage. When the inductor current decreased to zero, zero-cross detection circuitry on high-side MOSFET Q2 forces the Q2 off until the beginning of the next switching cycle. The boost converter does not sink current from the load at light load. Thermal Shutdown Once the junction temperature in the SCT12A0 exceeds 150OC, the thermal sensing circuit stops switching until the junction temperature falling below 130C, and the device restarts. Thermal shutdown prevents the damage on device during excessive heat and power dissipation condition. 10 For more information www.silicontent.com © 2017 Silicon Content Technology Co., Ltd. Product Folder Links: SCT12A0 All Rights Reserved SCT12A0 APPLICATION INFORMATION Typical Application L1 1.5uH VIN=2.7V-8.4V C4 0.1uF R2 270k C2 2x 22uF SW VOUT=9V BOOT FSW VOUT VIN C6 1uF ON EN OFF C7 100uF R3 383k SCT12A0 C1 0.1uF MODE FB VCC SS C3 1uF COMP ILIM C5 47nF R5 16.9k PGND R4 59k AGND R1 100k 47pF Optional C9 C8 4.7nF Figure 13. One Cell Battery Input, 9V/3A (30W) Output Design Parameters Design Parameters Example Value Input Voltage 3.0V to 4.2V Output Voltage 9V Output Current 3A Output voltage ripple (peak to peak) 100mV Switching Frequency 560 kHz Operation Mode PFM For more information www.silicontent.com © 2017 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT12A0 11 SCT12A0 Switching Frequency The resistor connected from FSW to SW sets switching frequency of the converter. The resistor value required for a desired frequency can be calculated using equation 2. High frequency can reduce the inductor and output capacitor size with the tradeoff of more thermal dissipation and lower efficiency. 6∗( 𝑅𝐹𝑅𝐸𝑄 = 1 𝑓𝑆𝑊 − 𝑇𝐷𝐸𝐿𝐴𝑌 ∗ 𝑉𝑂𝑈𝑇 𝑉𝐼𝑁 ) Table 1. RFSW Value for Common Switching Frequencies (Vin=3.6V, Vout=9V, Room Temperature) 𝐶𝐹𝑅𝐸𝑄 where: Fsw RFSW  fSW is the desired switching frequency 200 KHz 750KΩ  TDELAY = 90 ns 350 KHz 422 KΩ  CFREQ = 34 pF 520 KHz 270 KΩ  VIN is the input voltage 730 KHz 196 KΩ  VOUT is the output voltage 1000 KHz 127 KΩ 2000 KHz 48.7 KΩ Peak Current Limit Using the correct external resistor at ILIM pin sets the peak input current. Table 2 shows the resistor value for inductor peak current limit. For a typical current limit of 12A, the resistor value is 100KΩ. The minimum current limit must be higher than the required peak switch current at lowest input voltage and the highest output power not to hit the current limit and still regulate the output voltage. 𝐼𝐿𝐼𝑀 = Table 2. RLIM Value for Inductor Peak Current (Vin=3.6V, Vout=9V, L=1.5uH, Room Temperature) 1200 𝑅𝐿𝐼𝑀 where: ILIM RLIM  ILIM is the peak current limit 12 A 100 KΩ  RLIM is the resistance of ILIM pin to ground 8A 154 KΩ 6.3A 200 KΩ 4.4A 301 KΩ Output Voltage The output voltage is set by an external resistor divider R3 and R4 in typical application schematic. A minimum current of typical 20uA flowing through feedback resistor divider gives good accuracy and noise covering. The value of R3 can be calculated by equation 4. (𝑉𝑂𝑈𝑇 − 𝑉𝑅𝐸𝐹 ) × 𝑅4 𝑅3 = 𝑉𝑅𝐸𝐹 Table 3. Feedback Resistor R3 R4Value for Output Voltage (Room Temperature) (4) where:  VREF is the feedback reference voltage, typical 1.2V 12 VOUT R3 R4 5 V 187 KΩ 59 KΩ 9 V 383 KΩ 59 KΩ 12 V 536 KΩ 59 KΩ For more information www.silicontent.com © 2017 Silicon Content Technology Co., Ltd. Product Folder Links: SCT12A0 All Rights Reserved SCT12A0 Inductor Selection The performance of inductor affects the power supply’s steady state operation, transient behavior, loop stability, and boost converter efficiency. The inductor value, DC resistance, and saturation current influences both efficiency and the magnitude of the output voltage ripple. Larger inductance value reduces inductor current ripple and therefore leads to lower output voltage ripple. For a fixed DC resistance, a larger value inductor yields higher efficiency via reduced RMS and core losses. However, a larger inductor within a given inductor family will generally have a greater series resistance, thereby counteracting this efficiency advantage. Inductor values can have ±20% or even ±30% tolerance with no current bias. When the inductor current approaches saturation level, its inductance can decrease 20% to 35% from the value at 0-A current depending on how the inductor vendor defines saturation. When selecting an inductor, choose its rated current especially the saturation current larger than its peak current during the operation. To calculate the current in the worst case, use the minimum input voltage, maximum output voltage, maxim load current and minimum switching frequency of the application, while considering the inductance with -30% tolerance and low-power conversion efficiency. For a boot converter, calculate the inductor DC current as in equation 5 𝐼𝐿𝐷𝐶 = Where     𝑉𝑂𝑈𝑇 × 𝐼𝑂𝑈𝑇 𝑉𝐼𝑁 × 𝜂 (5) VOUT is the output voltage of the boost converter IOUT is the output current of the boost converter VIN is the input voltage of the boost converter η is the power conversion efficiency Calculate the inductor current peak-to-peak ripple, ILPP, as in equation 6. 𝐼𝐿𝑃𝑃 = Where      1 𝐿×( 1 𝑉𝑂𝑈𝑇 −𝑉𝐼𝑁 + 1 𝑉𝐼𝑁 (6) ) × 𝑓𝑆𝑊 ILPP is the inductor peak-to-peak current L is the inductance of inductor fSW is the switching frequency VOUT is the output voltage VIN is the input voltage Therefore the peak switching current of inductor, ILPEAK, is calculated as in equation 7. 𝐼𝐿𝑃𝐸𝐴𝐾 = 𝐼𝐿𝐷𝐶 + 𝐼𝐿𝑃𝑃 2 (7) Set the current limit of the SCT12A0 higher than the peak current I LPEAK and select the inductor with the saturation current higher than the current limit. The inductor’s DC resistance (DCR) and the core loss significantly affect the efficiency of power conversion. Core loss is related to the core material and different inductors have different core loss. For a certain inductor, larger current ripple generates higher DCR and ESR conduction losses and higher core loss. Usually, a data sheet of an inductor does not provide the ESR and core loss information. If needed, consult the inductor vendor for detailed information. There is a tradeoff among the inductor’s inductance, DCR and ESR resistance, and its footprint. Shielded inductors typically have higher DCR than unshielded inductors. Table 4 lists recommended inductors for the SCT12A0. Verify whether the recommended inductor can support the user's target application with the previous For more information www.silicontent.com © 2017 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT12A0 13 SCT12A0 calculations and bench evaluation. In this application, the WB's inductor CDMC8D28NP-1R2MC is used on SCT12A0 evaluation board. Table 4. Recommended Inductors Part Number L (uH) DCR Max (mΩ) Saturation Current/Heat Rating Current (A) Size Max (LxWxH mm) Vendor WE-HCI SMD 7443552150 1.5 5.3 17 / 14 10.5 x 10.2 x 4.0 WurthElektronix CDMC8D28NP-1R2MC 1.2 7.0 12.2 / 12. 9.5 x 8.7 x 3.0 Sumida Input Capacitor Selection For good input voltage filtering, choose low-ESR ceramic capacitors. A 0.1μF ceramic bypass capacitor is recommended to be placed as close as possible to the VIN pin of the SCT12A0. A ceramic capacitor of more than 1.0μF is required at the VCC pin to get a stable operation of the internal LDO. For the power stage, because of the inductor current ripple, the input voltage changes if there is parasite inductance and resistance between the power supply and the inductor. It is recommended to have enough input capacitance to make the input voltage ripple less than 100mV. Generally, 2x 22μF input capacitance is recommended for most applications. Choose the right capacitor value carefully considering high-capacitance ceramic capacitors DC bias effect, which has a strong influence on the final effective capacitance. Output Capacitor Selection For small output voltage ripple, choose a low-ESR output capacitor like a ceramic capacitor. Typically, 3~4x 22μF ceramic output capacitors work for most applications. Higher capacitor values can be used to improve the load transient response. Due to a capacitor’s derating under DC bias, the bias can significantly reduce capacitance. Ceramic capacitors can lose most of their capacitance at rated voltage. Therefore, leave margin on the voltage rating to ensure adequate effective capacitance. From the required output voltage ripple, use the equation 8 and 9 to calculate the minimum required effective capacitance, COUT. 𝑉𝑟𝑖𝑝𝑝𝑙𝑒_𝐶 = (𝑉𝑂𝑈𝑇 − 𝑉𝐼𝑁_𝑀𝐼𝑁 ) × 𝐼𝑂𝑈𝑇 𝑉𝑂𝑈𝑇 × 𝑓𝑆𝑊 × 𝐶𝑂𝑈𝑇 (8) 𝑉𝑟𝑖𝑝𝑝𝑙𝑒_𝐸𝑆𝑅 = 𝐼𝐿𝑝𝑒𝑎𝑘 × 𝐸𝑆𝑅 where         (9) Vripple_C is output voltage ripple caused by charging and discharging of the output capacitor. Vripple_ESR is output voltage ripple caused by ESR of the output capacitor. VIN_MIN is the minimum input voltage of boost converter. VOUT is the output voltage. IOUT is the output current. ILpeak is the peak current of the inductor. ƒSW is the converter switching frequency. ESR is the ESR resistance of the output capacitors. Loop Stability An external loop compensation network comprises resister R5, ceramic capacitors C8 and C9 connected to the COMP pin to optimize the loop response of the converter. The power stage small signal loop response of constant off time with peak current control can be modeled by equation 10. 14 For more information www.silicontent.com © 2017 Silicon Content Technology Co., Ltd. Product Folder Links: SCT12A0 All Rights Reserved SCT12A0 𝑆 𝑆 𝑅𝑙𝑜𝑎𝑑 × (1 − 𝐷) (1 + 2𝜋×𝑓𝐸𝑆𝑅𝑍)(1 + 2𝜋×𝑓𝑅𝐻𝑃𝑍) 𝐺𝑃𝑆 (𝑆) = × 𝑆 2 × 𝑅𝑆𝐸𝑁𝑆𝐸 1+ (10) 2𝜋×𝑓𝑃 where  D is the switching duty cycle.  Rload is the output load resistance.  RSENSE is the equivalent internal current sense resistor, which is 0.08 Ω. 𝑓𝑃 = 1 (11) 2𝜋 × 𝑅𝑙𝑜𝑎𝑑 × 𝐶𝑂 where  CO is the output capacitance 𝑓𝑃𝐸𝑆𝑅𝑍 = 1 2𝜋 × 𝐸𝑆𝑅 × 𝐶𝑂 (12) where  ESR is the equivalent series resistance of the output capacitor. 𝑓𝑃𝐸𝑆𝑅𝑍 = 𝑅𝑙𝑜𝑎𝑑 × (1 − 𝐷)2 2𝜋 × 𝐿 (13) The COMP pin is the output of the internal trans-conductance amplifier. Equation 14 shows the small signal transfer function of compensation network. 𝐺𝐸𝐴 × 𝑅𝐸𝐴 × 𝑉𝑅𝐸𝐹 𝐺𝐶 (𝑆) = × 𝑉𝑂𝑈𝑇 (1 + where       (1 + 𝑆 2𝜋×𝑓𝐶𝑂𝑀𝑍 𝑆 2𝜋×𝑓𝐶𝑂𝑀𝑃1 )(1 + ) 𝑆 2𝜋×𝑓𝐶𝑂𝑀𝑃2 ) (14) GEA is the amplifier’s trans-conductance REA is the amplifier’s output resistance VREF is the reference voltage at the FB pin VOUT is the output voltage ƒCOMP1, ƒCOMP2 are the poles' frequency of the compensation network. ƒCOMZ is the zero's frequency of the compensation network. The next step is to choose the loop crossover frequency, ƒ C . The higher frequency that the loop gain stays above zero before crossing over, the faster the loop response is. It is generally accepted that the loop gain cross over no higher than the lower of either 1/10 of the switching frequency, ƒSW , or 1/5 of the RHPZ frequency, ƒRHPZ. Then set the value of R5, C8, and C9 in typical application circuit by following these equations. 𝑅5 = 2𝜋 × 𝑉𝑂𝑈𝑇 × 𝑅𝑆𝐸𝑁𝑆𝐸 × 𝑓𝐶 × 𝐶𝑂 (1 − 𝐷) × 𝑉𝑅𝐸𝐹 × 𝐺𝐸𝐴 (15) where  ƒC is the selected crossover frequency. 𝐶8 = 𝑅𝑙𝑜𝑎𝑑 × 𝐶𝑂 2 × 𝑅5 𝐶9 = 𝐸𝑆𝑅 × 𝐶𝑂 𝑅5 (16) (17) If the calculated value of C9 is less than 10pF, it can be left open. Designing the loop for greater than 45°of phase margin and greater than 10-dB gain margin eliminates output voltage ringing during the line and load transient. For more information www.silicontent.com © 2017 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT12A0 15 SCT12A0 Application Waveforms Figure 14. Switching Waveforms and Output Ripple in PWM Figure 15. Switching Waveforms and Output Ripple in DCM Figure 16. Switching Waveforms in PFM Figure 17. Power Up IOUT Figure 18. Power Down 16 Figure 19. Load Transient (Vout=9V, Iout=2A to 3A, SR=250mA/us) For more information www.silicontent.com © 2017 Silicon Content Technology Co., Ltd. Product Folder Links: SCT12A0 All Rights Reserved SCT12A0 Layout Guideline The regulator could suffer from instability and noise problems without careful layout of PCB. Radiation of highfrequency noise induces EMI, so proper layout of the high-frequency switching path is essential. Minimize the length and area of all traces connected to the SW pin, and always use a ground plane under the switching regulator to minimize coupling. The input capacitor needs to be close to the VIN pin and GND pin to reduce the input supply ripple. The placement and ground trace for C6 are critical for the performance of SW ringing voltage. Place capacitor C6 as close to VOUT pin and power ground pad as possible to reduce high frequency ringing voltage on SW pin. Short NC pins to power ground pad directly to reduce the ground trace impedance of C6. The layout should also be done with well consideration of the thermal. The center thermal pad should always be soldered to the board for mechanical strength and reliability, using multiple thermal vias underneath the thermal pad. The bottom layer is a large ground plane connected to the PGND plane and AGND plane on top layer by vias. Since thermal pad is electrical power ground of the device, improper soldering thermal pad to ground plate on PCB will cause SW higher ringing and overshoot besides downgrading thermal performance. it is recommended 8mil diameter drill holes of thermal vias, but a smaller via offers less risk of solder volume loss. On applications where solder volume loss thru the vias is of concern, plugging or tenting can be used to achieve a repeatable process. AGND L1 VCC AGND EN ILIM FSW COMP SW VIN SW FB SW VOUT SW VOUT SW VOUT BOOT VOUT MODE VIN NC NC SS PGND Figure 19. PCB Layout Example Bottom Layer Thermal Considerations The maximum IC junction temperature should be restricted to 125°C under normal operating conditions. Calculate the maximum allowable dissipation, PD(max) , and keep the actual power dissipation less than or equal to P D(max) . The maximum-power-dissipation limit is determined using Equation 18. 𝑃𝐷(𝑀𝐴𝑋) = 125 − 𝑇𝐶𝐴 𝑅θJA (18) where  TA is the maximum ambient temperature for the application.  RθJA is the junction-to-ambient thermal resistance given in the Thermal Information table. SCT12A0 DFN package includes a thermal pad that improves the thermal capabilities of the package. The real junction-to-ambient thermal resistance RθJA of the package greatly depends on the PCB type, layout, thermal pad connection and environmental factor. Using thick PCB copper and soldering the thermal pad to a large ground plate enhance the thermal performance. Using more vias connects the ground plate on the top layer and bottom layer around the IC without solder mask also improves the thermal capability. For more information www.silicontent.com © 2017 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT12A0 17 SCT12A0 PACKAGE INFORMATION TOP VIEW BOTTOM VIEW SYMBOL SIDE VIEW NOTE: 1. 2. 3. 4. 5. 6. 18 Drawing proposed to be made a JEDEC package outline MO-220 variation. Drawing not to scale. All linear dimensions are in millimeters. Thermal pad shall be soldered on the board. Dimensions of exposed pad on bottom of package do not include mold flash. Contact PCB board fabrication for minimum solder mask web tolerances between the pins. A A1 b c D D2 D3 e e1 e2 Nd E E2 E3 E4 L h For more information www.silicontent.com © 2017 Silicon Content Technology Co., Ltd. Product Folder Links: SCT12A0 Unit: Millimeter MIN TYP MAX 0.85 0.90 0.95 0 0.02 0.05 0.18 0.25 0.30 0.18 0.20 0.25 4.40 4.50 4.60 3.10 3.20 3.30 3.85REF 0.50BSC 0.75BSC 0.25BSC 3.50BSC 3.40 3.50 3.60 2.10 2.20 2.30 0.35REF 0.75REF 0.35 0.40 0.45 0.20 0.25 0.30 All Rights Reserved SCT12A0 TAPE AND REEL INFORMATION Orderable Device SCT12A0DHKR Reel Width 12 Package Type DFN 3.5mmx4.5mm A Ø329±1 Pins 20 SPQ 3000 REEL DIMENSIONS B C 12.8±1 Ø100±1 D Ø13.3±0.3 t 2.0±0.3 TAPE DIMENSIONS W (mm) A0 (mm) B0 (mm) K0 (mm) t (mm) P (mm) 12±0.30 3.80±0.10 4.80±0.10 1.18±0.10 0.30±0.05 8±0.10 E (mm) F (mm) P2 (mm) D (mm) D1 (mm) P0 (mm) 10P0 (mm) 1.75±0.10 5.50±0.10 2.00±0.10 1.55±0.10 1.50MIN 4.00±0.10 40.0±0.20 For more information www.silicontent.com © 2017 Silicon Content Technology Co., Ltd. All Rights Reserved Product Folder Links: SCT12A0 19 SCT12A0 TYPICAL APPLICATION 12V Output, Synchronous Boost Converter Efficiency, Vin=3.6V L1 1.5uH VIN=3.0~4.2V C4 0.1uF R2 SW FSW 270K ON C1 0.1uF OFF VOUT=12V IOUT=3A BOOT VOUT VIN C6 1uF EN C7 4x 22uF SCT12A0 MODE VCC FB SS COMP ILIM C3 1uF C5 47nF R5 17.4K PGND AGND R1 100K Efficiency C2 2x 22uF R3 536K C10 1000pF Optional R4 59K C9 47pF C8 4700pF 100% 90% 80% 70% 60% 50% 40% 30% 20% 10% 0% PWM PFM 0.01 0.10 1.00 Output Current (A) 10.00 RELATED PARTS PART NUMBERS SCT12A1 DESCRIPTION COMMENTS 30W Fully-integrated Synchronous Boost Converter with Load Disconnection Vin=2.7V-14V, 12A switch current Load disconnection control to an external PMOS with high-side current sensing to protect  Damage of circuit components and cause catastrophic failure at load during hard short.  Presence of unwanted output voltage before start up sequence causing system to latch off or malfunction. L1 1.5uH VIN=2.7~4.2V C4 0.1uF C2 2x 22uF R2 SW FDMC612PZ BOOT FSW VOUT VOUT=9V IOUT=3A 270K VIN ON C1 0.1uF C6 1uF R3 383K EN OFF SCT12A1 FB PGATE MODE ENPGATEZ VCC SS COMP ILIM C3 1uF PGND C5 47nF C10 2x 22uF C7 2x 22uF R5 16.9K AGND R1 100K R4 59K C9 47pF C8 4700pF Figure 20. SCT12A1 Typical Application NOTICE: The information in this document is subject to change without notice. Users should warrant and guarantee the third party Intellectual Property rights are not infringed upon when integrating Silicon Content Technology (SCT) products into any application. SCT will not assume any legal responsibility for any said applications. 20 Silicon Content Technology Co., Ltd. #1 Floor 2 Building 15, Yard 33 Dijin Road, Haidian District, Beijing 100095 (86 10) 64779806 FAX: (86 10) 64779806 www.silicontent.com © Silicon Content Technology
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SCT12A0DHKR
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    • 1+5.17320
    • 10+4.68720
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