SLESD8D5.0CT5G

SLESD8D5.0CT5G Bi-directional ESD Protection Diode in DFN1006 Package 1. Features  Capacitance: 15pF(typ.)  Reverse Working Voltage: 5V  IEC 61000-4-2 (ESD Air): ±25KV 2. Pin Description 4. Schematic Diagram IEC 61000-4-2 (ESD Contact): ±25KV IEC 61000-4-5 (Lightning 8/20µs): 5A 3. 5. 6. Applications  Smart Phone and Tablet PC  TV and Set Top Box  Wearable Devices  PDA 2 Order Information Type Package Size (mm) Delivery Form Delivery Quantity SLESD8D5.0CT5G DFN1006 1.00x0.60x0.37 7” T&R 10,000 Limiting Values(TA = 25 °C, unless otherwise specified) Symbol 7. 1 Parameter Conditions Min Max Unit IEC 61000-4-2; Contact Discharge - ±25 kV IEC 61000-4-2; Air Discharge - ±25 kV VESD Electrostatic Discharge Voltage PPP Peak Pulse Power tP = 8/20 µs - 60 W IPPM Rated Peak Pulse Current tP = 8/20 µs - 5 A TA Ambient Temperature Range - -55 125 ℃ Tstg Storage Temperature Range - -55 150 ℃ Electrical Characteristics(TA = 25 °C, unless otherwise specified) Symbol Parameter Conditions Reverse Working Voltage TA = 25 °C Breakdown Voltage IR = 1mA; TA = 25 °C IR Reverse Leakage Current VC Clamping Voltage CJ Junction Capacitance VRWM VBR www.slkormicro.com Min Typ. Max Unit - - 5.0 V 5.6 6.5 8.4 V VRWM = 5V; TA = 25 °C - - 0.1 µA IPP=1A, tP =8/20µs - - 10 V IPP=5A, tP =8/20µs - - 12 V VR = 0V, f = 1 MHz - 5 18 pF 1 SLESD8D5.0CT5G Typical Characteristics TLP Current(A) 8. 20 18 16 14 12 10 8 6 4 2 0 -2 0 Fig.1 Pulse Waveform-ESD(IEC61000-4-2) 2 4 6 8 10 TLP Voltage(V) 12 Fig.2 Transmission Line Pulse (TLP) 0.015 Curve Trace Current (A) 0.01 0.005 0 -0.005 -0.01 -0.015 -15 -10 -5 0 5 10 15 Forced Voltage (V) Fig.3 V-I Characteristics for Bidirectional Diode Fig.4 IV Curve Fig.5 Clamping Voltage at IEC61000-4-2 Fig.6 Clamping Voltage at IEC61000-4-2 +8kV Pulse Waveform -8kV Pulse Waveform www.slkormicro.com 2 SLESD8D5.0CT5G 9. Package Outline Dimensions DFN1006 Package Outline Symbol www.slkormicro.com Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.350 0.450 0.014 0.018 D 0.550 0.650 0.022 0.026 E 0.950 1.050 0.037 0.041 D1 0.420 0.520 0.017 0.020 E1 0.550 0.650 0.022 0.026 L 0.270 0.370 0.011 0.015 L1 0.000 0.100 0.000 0.004 3 SLESD8D5.0CT5G 10. Soldering Parameters tp TP Critical Zone TL to TP Ramp-up TL tL Temperature TS(max) Ramp-down Preheat TS(min) ts 25 time to peak temperatue (t 25℃ to peak) Reflow Condition Pre-heat Pb-Free Assembly -Temperature Min (Ts(min)) +150°C -Temperature Max(Ts(max)) +200°C -Time (Min to Max) (ts) 60-180 secs. Average ramp up rate (Liquid us Temp (TL) to peak) 3°C/sec. Max Ts(max) to TL - Ramp-up Rate 3°C/sec. Max Reflow www.slkormicro.com Time -Temperature(TL)(Liquid us) +217°C -Temperature(tL) 60-150 secs. Peak Temp (Tp) +260(+0/-5)°C Time within 5°C of actual Peak Temp (tp) 30 secs. Max Ramp-down Rate 6°C/sec. Max xTime 25°C to Peak Temp (TP) 8 min. Max Do not exceed +260°C 4