KNB3306B

KIA 80A 60V N-CHANNEL MOSFET 3306B SEMICONDUCTORS 1. Features n RDS(ON)= 7mΩ typ@ VGS=10V n Lead free and Green Device Available n Low Rds-on to Minimize Conductive Loss n High avalanche Current 2. Application n Power Supply n DC-DC Converters 3. Pin configuration 1 of 6 Pin Function 1 Gate 2 Drain 3 Source Rev 1.0 Sep.2017 KIA 80A 60V N-CHANNEL MOSFET 3306B SEMICONDUCTORS 4. Ordering Information Part Number Package Brand KND3306B TO-252 KIA KNB3306B TO-263 KIA 5. Absolute maximum ratings Parameter Symbol Drain-source voltage Gate-source voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy VDSS VGSS TC=25 ºC TC=100 ºC TC=25 ºC ID3 IDP4 IAS5 EAS5 TC=25 ºC PD TC =100 ºC Junction & Storage Temperature Range TL,TSTG *Drain current limited by maximum junction temperature. Maximum Power Dissipation (TC= 25ºC , unless otherwise specified) Rating Units TO-252 TO-263 60 V ±25 V 80* 80 60* 60 A 280 20 400 mJ 84.5 156 W 41 80 -55~+150 ºC 6. Thermal characteristics Symbol Parameter RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2 of 6 Typical TO-252 TO-263 1.48 0.8 62.5 Rev 1.0 Sep.2017 Unit ºC /W KIA 80A 60V N-CHANNEL MOSFET 3306B SEMICONDUCTORS 7. Electrical characteristics Parameter (TJ=25°C,unless otherwise specified) Min Typ Max Unit Symbol Conditions V(BR)DSS VGS=0V,ID=250μA Static Characteristics Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage current IDSS IGSS Gate threshold voltage VGS(th) Drain-source on resistance RDS(on) 60 - - V 1 100 +100 μA μA nA 3 7 7.5 4 8.0 8.5 V mΩ mΩ 0.85 1.3 V 80 A VDS=48V,VGS=0V TJ=125 ºC VGS=+25V,VDS=0V VDS=VGS, ID=250μA VGS=10V,ID=40A（TO-263) VGS=10V,ID=40A（TO-252) 2 Diode Characteristics VSD1 Diode Forward Voltage Diode Continuous Forwardcurrent IS3 Reverse recovery time trr Reverse recovery charge Qrr VGS=0V,ISD=20A IF=30A, di/dt=100A/μs 33 ns 61 nC VGS=0V, VDS=0A Frequency=1MHz 1.2 Ω Dynamic Characteristics2 Gate Repacitance RG Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss 195 Turn-on delay time td(on) 14 Rise time tr Turn-off delay time td(off) Fall time 3080 VDS=25V,VGS=0V,f=1MHz VDD=30V,ID=30A, RG=6.8Ω,VGS=10V tf 400 13 20 pF ns 7.5 2 Gate Charge Characteristics Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd 104 VDS=30V, ID=30A ,VGS=10V, 16 22 Note: 1: Pulse test; pulse width ≦ 300us, duty cycle ≦ 2%. 2: Guaranteed by design, not subject to production testing. 3: Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 55A. 4: Repetitive rating, pulse width limited by max junction temperature. 5:Starting TJ=25 ºC,L=0.5mH, IAS=40A. 3 of 6 Rev 1.0 Sep.2017 nC KIA 80A 60V N-CHANNEL MOSFET 3306B SEMICONDUCTORS 7. Typical Characteristics 4 of 6 Rev 1.0 Sep.2017 KIA 80A 60V N-CHANNEL MOSFET 3306B SEMICONDUCTORS 5 of 6 Rev 1.0 Sep.2017 KIA 80A 60V N-CHANNEL MOSFET 3306B SEMICONDUCTORS 6 of 6 Rev 1.0 Sep.2017